MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 21 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In MESFET for gate _____ junction is used. |
| A. | pnp junction |
| B. | npn junction |
| C. | schottky junction |
| D. | n junction |
| Answer» D. n junction | |
| 2. |
As the separation between metal-semiconductor surface is reduced, induction charge |
| A. | increases |
| B. | decreases |
| C. | remains constant |
| D. | is not affected |
| Answer» B. decreases | |
| 3. |
Schottky barrier is created due to the difference in |
| A. | voltages |
| B. | thickness |
| C. | work function |
| D. | density |
| Answer» D. density | |
| 4. |
The MESFET has maximum |
| A. | gate to drain voltage |
| B. | gate to source voltage |
| C. | source voltage |
| D. | drain voltage |
| Answer» C. source voltage | |
| 5. |
A highly doped thick channel exhibits _______ threshold voltage. |
| A. | smaller negative |
| B. | smaller positive |
| C. | larger negative |
| D. | larger positive |
| Answer» D. larger positive | |
| 6. |
D type and E type MESFETs operates by ________ of existing doped channel. |
| A. | depletion |
| B. | enhancement |
| C. | e type MESFET |
| D. | d type MESFET |
| Answer» B. enhancement | |
| 7. |
The gallium arsenide field effect transistor is ________ majority carrier device. |
| A. | bulk current insulation |
| B. | bulk current conduction |
| C. | bulk voltage insulation |
| D. | bulk voltage conduction |
| Answer» C. bulk voltage insulation | |
| 8. |
THE_MESFET_HAS_MAXIMUM?$ |
| A. | gate to drain voltage |
| B. | gate to source voltage |
| C. | source voltage |
| D. | drain voltage |
| Answer» C. source voltage | |
| 9. |
As the separation between metal-semiconductor surface is reduced, induction charge$ |
| A. | increases |
| B. | decreses |
| C. | remains constant |
| D. | is not affected |
| Answer» B. decreses | |
| 10. |
Schottky barrier is created due to difference in$ |
| A. | voltages |
| B. | thickness |
| C. | work function |
| D. | density |
| Answer» D. density | |
| 11. |
MESFET is constructed in |
| A. | SiC |
| B. | InP |
| C. | GaAs |
| D. | all of the mentioned |
| Answer» E. | |
| 12. |
In MESFET for gate, _____ junction is used |
| A. | pnp junction |
| B. | npn junction |
| C. | schottky junction |
| D. | n junction |
| Answer» D. n junction | |
| 13. |
A highly doped thick channel exhibits _______ threshold voltag? |
| A. | smaller negative |
| B. | smaller positive |
| C. | larger negative |
| D. | larger positive |
| Answer» D. larger positive | |
| 14. |
The threshold voltage cannot be determined using |
| A. | concentration density |
| B. | channel thickness |
| C. | implanted impurity |
| D. | channel depth |
| Answer» E. | |
| 15. |
Which is ON device? |
| A. | e type MESFET |
| B. | d type MESFET |
| C. | depletion |
| D. | enhancement |
| Answer» C. depletion | |
| 16. |
D type and E type MESFETs opearates by ________ of existing doped channel |
| A. | depletion |
| B. | enhancement |
| C. | e type MESFET |
| D. | d type MESFET |
| Answer» B. enhancement | |
| 17. |
Which MOSFET contains schottky diode? |
| A. | GaAs |
| B. | Ga |
| C. | Si |
| D. | SiO2 |
| Answer» B. Ga | |
| 18. |
Which region is heavily doped? |
| A. | drain |
| B. | gate |
| C. | n-region |
| D. | p-region |
| Answer» B. gate | |
| 19. |
How many masking stages does fabrication of GaAs FET require? |
| A. | five |
| B. | four |
| C. | ten |
| D. | eight |
| Answer» E. | |
| 20. |
Method used for fabrication of GaAs FET is |
| A. | ion implantation |
| B. | disposition |
| C. | diffusion |
| D. | conduction |
| Answer» B. disposition | |
| 21. |
The gallium arsenide field effect transistor is ________ majority carrier device |
| A. | bulk current insulation |
| B. | bulk current conduction |
| C. | bulk voltage insulation |
| D. | bulk voltage conduction |
| Answer» C. bulk voltage insulation | |