MCQOPTIONS
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This section includes 19 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Bipolar transistor is a symmetrical device. |
| A. | true |
| B. | false |
| Answer» C. | |
| 2. |
In bipolar transistor, which is heavily doped? |
| A. | base region |
| B. | emitter region |
| C. | collector region |
| D. | base and emitter |
| Answer» C. collector region | |
| 3. |
Bipolar transistor exhibits _______ delay. |
| A. | turn on |
| B. | turn off |
| C. | storage |
| D. | all of the mentioned |
| Answer» E. | |
| 4. |
Which has better I/A? |
| A. | CMOS |
| B. | bipolar |
| C. | nMOS |
| D. | pMOS |
| Answer» C. nMOS | |
| 5. |
Transconductance is a __________ |
| A. | weak function |
| B. | strong function |
| C. | weak and strong function |
| D. | none of the mentioned |
| Answer» B. strong function | |
| 6. |
gm is _______ to Ic. |
| A. | directly proportional |
| B. | inversely proportional |
| C. | not dependent |
| D. | exponentially proportional |
| Answer» B. inversely proportional | |
| 7. |
gm is ______ on input voltage Vbe. |
| A. | inversely proportional |
| B. | proportional |
| C. | exponentially dependent |
| D. | is not dependent |
| Answer» D. is not dependent | |
| 8. |
The transconductance of a bipolar is given by ______________ |
| A. | (kT/q)/Ic |
| B. | Ic/(kT/q) |
| C. | (q/KT)/Ic |
| D. | Ic/(q/KT) |
| Answer» C. (q/KT)/Ic | |
| 9. |
IN_BIPOLAR_TRANSISTOR,_WHICH_IS_HEAVILY_DOPED??$ |
| A. | base region |
| B. | emitter region |
| C. | collector region |
| D. | base and emitter |
| Answer» C. collector region | |
| 10. |
Bipolar transistor is a symmetrical device.$ |
| A. | true |
| B. | false |
| Answer» C. | |
| 11. |
Bipolar transistor exhibits _______ dela? |
| A. | turn on |
| B. | turn off |
| C. | storage |
| D. | all of the mentioned |
| Answer» E. | |
| 12. |
Which has better I/A ? |
| A. | CMOS |
| B. | bipolar |
| C. | nMOS |
| D. | pMOS |
| Answer» C. nMOS | |
| 13. |
Which of the following is true when inputs are controlled by equal amounts of charge? |
| A. | Cg(MOS) = Cbase(bipolar) |
| B. | Cg(MOS) greater than Cbase(bipolar) |
| C. | Cg(MOS) lesser than Cbase(bipolar) |
| D. | Cs(MOS) lesser than Cbase(bipolar) |
| Answer» B. Cg(MOS) greater than Cbase(bipolar) | |
| 14. |
gm of bipolar is less than gm of MOS. |
| A. | true |
| B. | false |
| Answer» C. | |
| 15. |
Transconductance is a |
| A. | weak function |
| B. | strong function |
| C. | both |
| D. | none of the mentioned |
| Answer» B. strong function | |
| 16. |
gm is _______ to Ic |
| A. | directly proportional |
| B. | inversely proportional |
| C. | not dependent |
| D. | exponentially proportional |
| Answer» B. inversely proportional | |
| 17. |
gm is ______ on input voltage Vbe |
| A. | inversely proportional |
| B. | proportional |
| C. | exponentially dependent |
| D. | is not dependent |
| Answer» D. is not dependent | |
| 18. |
Transconductance depends on the process. |
| A. | true |
| B. | false |
| Answer» C. | |
| 19. |
Transconductance of a bipolar is given by |
| A. | (kT/q)/Ic |
| B. | Ic/(kT/q) |
| C. | (q/KT)/Ic |
| D. | Ic/(q/KT) |
| Answer» C. (q/KT)/Ic | |