MCQOPTIONS
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MCQOPTIONS
This section includes 12 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
CURRENT_SATURATION_OCCURS_WHEN?$ |
| A. | Vgs < Vt |
| B. | Vgs > Vt |
| C. | Vgs > Vds |
| D. | Vgs = Vt |
| Answer» B. Vgs > Vt | |
| 2. |
Knee voltage is the boundary between$ |
| A. | active region and saturation region |
| B. | linear and non linear region |
| C. | linear and saturation region |
| D. | linear and cutoff region |
| Answer» D. linear and cutoff region | |
| 3. |
Velocity saturation occurs in$ |
| A. | low electric field |
| B. | high electric field |
| C. | low magnetic field |
| D. | high magnetic field |
| Answer» C. low magnetic field | |
| 4. |
The magnitude of the depletion region decreases whe? |
| A. | Vgs decreases |
| B. | Vgs increases |
| C. | Vds increases |
| D. | Vds decreases |
| Answer» C. Vds increases | |
| 5. |
The hyperbolic tangent function is used to describe the |
| A. | channel conductance |
| B. | channel length |
| C. | channel strength |
| D. | channel depth |
| Answer» B. channel length | |
| 6. |
The range of kp in MESFET is |
| A. | 0.1 to 1 mA/V<sup>2</sup> |
| B. | 1 to 5 mA/V<sup>2</sup> |
| C. | 0.1 to 0.5 mA/V<sup>2</sup> |
| D. | 0 to 1 mA/V<sup>2</sup> |
| Answer» D. 0 to 1 mA/V<sup>2</sup> | |
| 7. |
Average electric field is _______ to implant depth |
| A. | directly proportional |
| B. | indirectly proportional |
| C. | does not depend |
| D. | exponentially dependent |
| Answer» C. does not depend | |
| 8. |
The average potential is given as |
| A. | Vgs – Vt |
| B. | 0.5( Vgs – Vt) |
| C. | 0.25( Vgs – Vt) |
| D. | 2( Vgs – Vt) |
| Answer» C. 0.25( Vgs ‚Äö√Ñ√∂‚àö√ë‚àö¬® Vt) | |
| 9. |
Transit time can be given as the ratio of |
| A. | channel length to velocity |
| B. | electron distance to velocity |
| C. | source length to velocity |
| D. | drain length to velocity |
| Answer» B. electron distance to velocity | |
| 10. |
Drain to source current is due to |
| A. | flow of majority carriers from drain to source |
| B. | flow of minority carriers from drain to source |
| C. | flow of majority carriers from source to drain |
| D. | flow of majority carriers from drain to source |
| Answer» E. | |
| 11. |
Gallium arsenide have _____ regions of operation |
| A. | two |
| B. | three |
| C. | four |
| D. | five |
| Answer» C. four | |
| 12. |
MESFETs are _______ modulation devices |
| A. | channel area |
| B. | channel voltage |
| C. | channel current |
| D. | channel variation |
| Answer» B. channel voltage | |