MESFET is constructed in – McqOptions

MCQOPTIONS

Saved Bookmarks

→ Vlsi
→ Characteristics Npn Bipolar Transistors in Vlsi
→ MESFET is constructed in..

1.	MESFET is constructed in
A.	SiC
B.	InP
C.	GaAs
D.	all of the mentioned
Answer» E.

Discussion

No Comment Found

Related MCQs

In MESFET for gate _____ junction is used.
As the separation between metal-semiconductor surface is reduced, induction charge
Schottky barrier is created due to the difference in
The MESFET has maximum
A highly doped thick channel exhibits _______ threshold voltage.
D type and E type MESFETs operates by ________ of existing doped channel.
The gallium arsenide field effect transistor is ________ majority carrier device.
THE_MESFET_HAS_MAXIMUM?$
As the separation between metal-semiconductor surface is reduced, induction charge$
Schottky barrier is created due to difference in$

Related Topics

Characteristics Npn Bipolar Transistors in Vlsi

System Considerations in Vlsi

Bicmos Logic Gates in Vlsi

Metal Oxide Semiconductor Transistor in Vlsi

Automatic Test Pattern Generation in Vlsi

Device Modelling Performance Estimation in Vlsi

Sheet Resistance Mos Inverters in Vlsi

Testing Sequential Logic in Vlsi

Floor Layout in Vlsi

Gaas Mesfet Logics in Vlsi

Recent Visits

Reply to Comment

Name *

Email *

Comment *

© Copyright 2025 McqOptions. All rights reserved.

Terms & Conditions
Privacy Policy
Disclaimer

Support: admin@mcqoptions.com