MCQOPTIONS
Bookmark
Saved Bookmarks
→
Vlsi
→
Characteristics Npn Bipolar Transistors in Vlsi
→
Schottky barrier is created due to difference in$..
1.
Schottky barrier is created due to difference in$
A.
voltages
B.
thickness
C.
work function
D.
density
Answer» D. density
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
In MESFET for gate _____ junction is used.
As the separation between metal-semiconductor surface is reduced, induction charge
Schottky barrier is created due to the difference in
The MESFET has maximum
A highly doped thick channel exhibits _______ threshold voltage.
D type and E type MESFETs operates by ________ of existing doped channel.
The gallium arsenide field effect transistor is ________ majority carrier device.
THE_MESFET_HAS_MAXIMUM?$
As the separation between metal-semiconductor surface is reduced, induction charge$
Schottky barrier is created due to difference in$
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply