MCQOPTIONS
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MCQOPTIONS
This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The depletion mode n-MOS differs from enhancement mode n-MOS in: |
| A. | Threshold voltage |
| B. | Channel Length |
| C. | Switching time |
| D. | None of the mentioned |
| Answer» B. Channel Length | |
| 2. |
The impedance at the input of n-MOS transistor circuit is : |
| A. | Lesser than p-MOS transistor |
| B. | Greater than BJT transistor |
| C. | Lesser than JFET transistor |
| D. | Zero |
| Answer» C. Lesser than JFET transistor | |
| 3. |
The conduction of current IDS depends on: |
| A. | Gate to source voltage |
| B. | Drain to source voltage |
| C. | Bulk to source voltage |
| D. | Threshold voltage |
| Answer» E. | |
| 4. |
The principle of the MOSFET operation is: |
| A. | Control the conduction of current between the source and the drain, using the potential difference applied at the gate voltage as a control variable |
| B. | Control the current conduction between the source and the gate, using the electric field applied at the drain voltage as a control variable |
| C. | Control the current conduction between the PN junction, using the electric field generated by the bias voltage as a control variable |
| D. | Control the current conduction between the PN junctions, using the electric potential generated by the gate voltage as a control variable |
| Answer» B. Control the current conduction between the source and the gate, using the electric field applied at the drain voltage as a control variable | |
| 5. |
The Fermi potential(φfp) for the n-type MOSFET is :$ |
| A. | φfp = (kT/q)ln(ND/NA) |
| B. | φfp = (kT/q)ln(NA/ND) |
| C. | φfp = (kT/q)ln(ND/ ni) |
| D. | φfp = (kT/q)ln(ni/ND) |
| Answer» D. ‚âà√¨‚àö√∫fp = (kT/q)ln(ni/ND) | |
| 6. |
The Fermi potential of the p-type MOSFET is : |
| A. | φfp = (kT/q)ln(ND/NA) |
| B. | φfp = (kT/q)ln(NA/ND) |
| C. | φfp = (kT/q)ln(NA/ ni) |
| D. | φfp = (kT/q)ln(ni/NA) |
| Answer» E. | |
| 7. |
The p-MOS Transistor is said to be in Saturation mode when: |
| A. | Vdsp > Vgsp – Vtp |
| B. | Vgsp < Vdsp –Vtp |
| C. | Vgsp > Vtp |
| D. | Vdsp < Vgsp – Vtp |
| Answer» E. | |
| 8. |
The current through the n-MOS transistor will flow when: |
| A. | Vgs > Vtreshold, Vds=0 |
| B. | Vgd < Vtreshold, Vds=0 |
| C. | Vgs > Vtreshold, Vds>0 |
| D. | Vgd > Vtreshold, Vds<0 |
| Answer» D. Vgd > Vtreshold, Vds<0 | |