Explore topic-wise MCQs in Vlsi.

This section includes 23 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.

1.

In BiCMOS, the analysis of the operation of BJT is well explained by ___________

A. RC Model
B. Emitter resister model
C. Ebers Moll Model
D. Hybrid model
Answer» D. Hybrid model
Discussion
2.

What is the work of BJT in BiCMOS?

A. Current controlled Voltage source
B. Voltage controlled Current source
C. Current controlled current source
D. Voltage controlled current source
Answer» C. Current controlled current source
Discussion
3.

In the following diagram of BiCMOS, the labels a, b, c, d denote?

A. A = Collector, B = Base, C = Source, D = Drain
B. A = Emitter, B = Base, C = Drain, D = Source
C. A = Emitter, B = Collector, C = Source, D = Drain
D. A = Collector, B = Emitter, C = Drain, D = Source
Answer» D. A = Collector, B = Emitter, C = Drain, D = Source
Discussion
4.

The collector contact region is doped with higher concentration of n-type impurities due to __________

A. It creates a depletion region at the contact surface
B. It creates a low conductivity path between collector region and contact
C. It reduces contact resistance
D. It can withstand high voltages as compared to collector region
Answer» D. It can withstand high voltages as compared to collector region
Discussion
5.

The n-well collector is formed by __________

A. Lightly doped n-type epitaxial layer on p-Substrate
B. Heavily doped n-type epitaxial layer on p-Substrate
C. Lightly doped n-type diffused layer on p-Substrate
D. Heavily doped n-type diffused layer on p-Substrate
Answer» B. Heavily doped n-type epitaxial layer on p-Substrate
Discussion
6.

The n-well created for Bipolar Transistor in BiCMOS is used as __________

A. Substrate
B. Collector
C. Emitter
D. None of the mentioned
Answer» C. Emitter
Discussion
7.

The Bipolar Transistor is fabricated on __________

A. Same substrate of nMOS
B. N-well in p Substrate
C. P-well in n Substrate
D. Same substrate of pMOS
Answer» B. N-well in p Substrate
Discussion
8.

Which of the following is the drawback of the BiCMOS circuits?

A. Sensitivity is less load capacitance
B. Bipolar transistors are used for driving current to the load capacitance but not for the logic operations
C. Increased fabrication Complexity
D. All of the mentioned
Answer» D. All of the mentioned
Discussion
9.

In BiCMOS inverter, the BJT used are __________

A. Only Npn BJT
B. Only Pnp BJT
C. Both npn and pnp BJT
D. Multi emitter npn BJT
Answer» B. Only Pnp BJT
Discussion
10.

The high current driving capability of the BiCMOS is due to __________

A. NMOS in saturation mode
B. PMOS in saturation mode
C. CMOS
D. BJT
Answer» E.
Discussion
11.

The transistors used in BiCMOS are __________

A. BJT
B. MOSFET
C. Both BJT and MOSFETs
D. JFET
Answer» D. JFET
Discussion
12.

The BiCMOS are preferred over CMOS due to ______________

A. Switching speed is more compared to CMOS
B. Sensitivity is less with respect to the load capacitance
C. High current drive capability
D. All of the mentioned
Answer» E.
Discussion
13.

The BJT in BiCMOS works as a:$

A. Current controlled Voltage source
B. Voltage controlled Current source
C. Current controlled current source
D. Voltage controlled current source
Answer» C. Current controlled current source
Discussion
14.

In BiCMOS, the analysis of the operation of BJT is well explained by:

A. RC Model
B. Emitter resister model
C. Ebers Moll Model
D. Hybrid model
Answer» D. Hybrid model
Discussion
15.

The collector contact region is doped with higher concentration of n-type impurities due to?

A. It creates a depletion region at the contact surface
B. It creates a low conductivity path between collector region and contact
C. It reduces a contact resistance
D. It can withstand high voltages as compared to collector region
Answer» D. It can withstand high voltages as compared to collector region
Discussion
16.

The n-well collector is formed by:

A. Lightly doped n-type epitaxial layer on p-Substrate
B. Heavily doped n-type epitaxial layer on p-Substrate
C. Lightly doped n-type diffused layer on p-Substrate
D. Heavily doped n-type diffused layer on p-Substrate
Answer» B. Heavily doped n-type epitaxial layer on p-Substrate
Discussion
17.

The n-well created for Bipolar Transistor in BiCMOS is used as:

A. Substrate
B. Collector
C. Emitter
D. None of the mentioned
Answer» C. Emitter
Discussion
18.

The Bipolar Transistor is fabricated on :

A. Same substrate of nMOS
B. N-well in p Substrate
C. P-well in n Substrate
D. Same substrate of pMOS
Answer» B. N-well in p Substrate
Discussion
19.

The drawback of the BiCMOS circuits are:

A. Sensitivity is less load capacitance
B. Bipolar transistors are used for driving current to the load capacitance but not for the logic operations
C. Increased fabrication Complexity
D. All of the mentioned
Answer» D. All of the mentioned
Discussion
20.

In BiCMOS inverter, the BJT used are:

A. Only Npn BJT
B. Only Pnp BJT
C. Both npn and pnp BJT
D. Multi emitter npn BJT
Answer» B. Only Pnp BJT
Discussion
21.

The high current driving capability of the BiCMOS is due to:

A. NMOS in saturation mode
B. PMOS in saturation mode
C. CMOS
D. BJT
Answer» E.
Discussion
22.

The transistors used in BiCMOS are:

A. BJT
B. MOSFET
C. Both BJT and MOSFETs
D. JFET
Answer» D. JFET
Discussion
23.

The BiCMOS are preferred over CMOS due to:

A. Switching speed is more compared to CMOS
B. Sensitivity is less with respect to load capacitance
C. High current drive capability
D. All of the mentioned
Answer» E.
Discussion