. In EPROMs, applying a high voltage to the upper gate causes, electrons to jump through the thin oxide onto the floating gate through the process known as

avalanche injection or Fowler-Nordheim-tunneling

. In EPROMs, applying a high voltage to the upper gate causes, electro

1.	. In EPROMs, applying a high voltage to the upper gate causes, electrons to jump through the thin oxide onto the floating gate through the process known as
A.	Mask programming
B.	one-time programming
C.	avalanche injection or Fowler-Nordheim-tunneling
D.	erasing
Answer» D. erasing

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. In EPROMs, applying a high voltage to the upper gate causes, electrons to jump through the thin oxide onto the floating gate through the process known as

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