MCQOPTIONS
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MCQOPTIONS
This section includes 252 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 201. |
Process transconductance parameter is 40μA/V2. Find drain to source current in saturation. |
| A. | 0.10 ma |
| B. | 0.05ma c) – 0.05ma |
| C. | d) – 50a |
| Answer» D. | |
| 202. |
Consider the following circuit. Process transconductance parameter = 0.50 mA/V2, W/L=1, Threshold voltage = 3V, VDD = 20V. Find the operating point of circuit. |
| A. | 20v, 25ma |
| B. | 13v, 22ma |
| C. | 12.72v, 23.61ma d) 20v, 23.61ma |
| Answer» D. | |
| 203. |
Consider the following circuit. IDSS = 2mA, VDD = 30V. Find R, given that VP = – 2V. |
| A. | 10kΩ |
| B. | 4kΩ |
| C. | 2kΩ |
| D. | 5kΩ |
| Answer» C. 2kΩ | |
| 204. |
To bias a e-MOSFET |
| A. | we can use either gate bias or a voltage divider bias circuit |
| B. | we can use either gate bias or a self bias circuit |
| C. | we can use either self bias or a voltage divider bias circuit |
| D. | we can use any type of bias circuit |
| Answer» B. we can use either gate bias or a self bias circuit | |
| 205. |
Consider the circuit shown. VDS=3 V. If IDS=2mA, find VDD to bias circuit. |
| A. | -30v |
| B. | 30v |
| C. | 33v |
| D. | any value of voltage less than 12 v |
| Answer» D. any value of voltage less than 12 v | |
| 206. |
7 BIASING BJT SWITCHING CIRCUITSJFET - DC LOAD LINE AND BIAS POINT, VARIOUS BIASING METHODS OF JFET - JFET BIAS CIRCUIT DESIGN |
| A. | rd < 6kΩ |
| B. | rd > 6kΩ |
| C. | rd > 4kΩ |
| D. | rd < 4kΩ |
| Answer» B. rd > 6kΩ | |
| 207. |
The negative sign in the formula of amplification factor indicates |
| A. | that ie flows into transistor while ic flows out it |
| B. | that ic flows into transistor while ie flows out it |
| C. | that ib flows into transistor while ic flows out it |
| D. | that ic flows into transistor while ib flows out it |
| Answer» B. that ic flows into transistor while ie flows out it | |
| 208. |
In the given situation for n-channel JFET, we get drain-to-source current is 5mA. What is the current when VGS = – 6V? |
| A. | 5 ma |
| B. | 0.5a |
| C. | 0.125 a |
| D. | 0.5a |
| Answer» D. 0.5a | |
| 209. |
The output resistance of CB transistor is given by |
| A. | ∆vcb/∆ic |
| B. | ∆vbe/∆ib |
| C. | ∆vbe/∆ic |
| D. | ∆veb/∆ie |
| Answer» B. ∆vbe/∆ib | |
| 210. |
Which of the following has a negative temperature coefficient of resistance? |
| A. | sensistor |
| B. | diode |
| C. | thermistor |
| D. | capacitor |
| Answer» D. capacitor | |
| 211. |
Increase in collector emitter voltage from 5V to 8V causes increase in collector current from 5mA to 5.3mA. Determine the dynamic output resistance. |
| A. | 20kΩ |
| B. | 10kΩ |
| C. | 50kΩ |
| D. | 60kΩ |
| Answer» C. 50kΩ | |
| 212. |
The expression for IC in the compensation for instability due to ICO variation |
| A. | βi+βio+βico |
| B. | βi+βio |
| C. | βio+βico |
| D. | βi+βico |
| Answer» B. βi+βio | |
| 213. |
What is the compensation element used for variation in VBE and ICO? |
| A. | diodes |
| B. | capacitors |
| C. | resistors |
| D. | transformers |
| Answer» B. capacitors | |
| 214. |
In a silicon transistor, which of the following change significantly to the change in IC? |
| A. | vce |
| B. | ib |
| C. | vbe |
| D. | b) ie |
| Answer» D. b) ie | |
| 215. |
Compensation techniques refer to the use of |
| A. | diodes |
| B. | capacitors |
| C. | resistors |
| D. | transformers |
| Answer» B. capacitors | |
| 216. |
The compensation techniques are used to |
| A. | increase stability |
| B. | increase the voltage gain |
| C. | improve negative feedback |
| D. | decrease voltage gain |
| Answer» C. improve negative feedback | |
| 217. |
Comparing fixed and collector to base bias which of the following statement is true? |
| A. | fixed bias is more stable |
| B. | collector to base bias is more stable |
| C. | both are the same in terms of stability |
| D. | depends on the design |
| Answer» C. both are the same in terms of stability | |
| 218. |
The temperature changes do not affect the Stability. |
| A. | true |
| B. | false |
| Answer» C. | |
| 219. |
For an ideal transistor having a fixed bias configuration, what will be the value of Beta? |
| A. | 0 |
| B. | 2 |
| C. | -1 |
| D. | 1 |
| Answer» D. 1 | |
| 220. |
For a fixed bias circuit having Ic = 0.3mA and In=0.0003mA, S is |
| A. | 100 |
| B. | 0 |
| C. | 11 d) 111 |
| Answer» D. | |
| 221. |
For a fixed bias circuit having RC=2Kohm and VCC=60V, IB=0.25mA and S=101, find Vce. |
| A. | 12v |
| B. | 10v |
| C. | 5v |
| D. | 2.5v |
| Answer» C. 5v | |
| 222. |
There are two transistors A and B having ‘S’ as 25 and 250 respectively, on comparing the value of S, we can say B is more stable than A. |
| A. | true |
| B. | false |
| Answer» C. | |
| 223. |
The base current for a BJT remains constant at 5mA, the collector current changes from 0.2mA to 0.3 mA and beta was changed from 100 to 110, then calculate the value of S. |
| A. | 0.01m |
| B. | 1m |
| C. | 100m |
| D. | 25m |
| Answer» B. 1m | |
| 224. |
For a n-p-n transistor, the collector current changed from 0.2mA to 0.22mA resulting a change of base emitter voltage from 0.8v to 0.8005V. What is the value of Stability factor? |
| A. | 0 |
| B. | 0.25 |
| C. | 0.04 |
| D. | 0.333 |
| Answer» D. 0.333 | |
| 225. |
What is Stability factor? |
| A. | ratio of change in collector current to change in a current amplification factor |
| B. | ratio of change in collector current to change in base current |
| C. | current amplification factor |
| D. | ratio of base current to collector current |
| Answer» B. ratio of change in collector current to change in base current | |
| 226. |
In the given circuit using a silicon BJT, what is the value of saturation collector current? |
| A. | 10 ma |
| B. | 8.77 ma |
| C. | 6.67 ma |
| D. | 5 ma |
| Answer» D. 5 ma | |
| 227. |
In the given circuit, what is the value of VE when using a silicon BJT? |
| A. | 2.01 v |
| B. | 0.28 v |
| C. | 0 v |
| D. | 2.28 v |
| Answer» E. | |
| 228. |
In the given circuit, using a silicon BJT, what is the value of VCE? |
| A. | 20 v |
| B. | 15.52 v |
| C. | 14.98 v |
| D. | 13.97 v |
| Answer» C. 14.98 v | |
| 229. |
In the given circuit, what is the value of IC if the BJT is made of Silicon? |
| A. | 2.01 ma |
| B. | 2.01 ua c) 10.05 ma d) 10.05 ua |
| Answer» B. 2.01 ua c) 10.05 ma d) 10.05 ua | |
| 230. |
From the given circuit, using silicon BJT, what is the value of the saturation collector current? |
| A. | 5 ma |
| B. | 5.36 ma |
| C. | 5.45 ma |
| D. | 10.9 ma |
| Answer» C. 5.45 ma | |
| 231. |
From the given circuit, using a silicon BJT, what is the value of VBC? |
| A. | 6.13 v |
| B. | -6.13 v |
| C. | 7 v |
| D. | -7 v |
| Answer» C. 7 v | |
| 232. |
For best operation of a BJT, which region must the operating point be set at? |
| A. | active region |
| B. | cutoff region |
| C. | saturation region |
| D. | reverse active region |
| Answer» B. cutoff region | |
| 233. |
From the given circuit, using a silicon transistor, what is the value of IBQ? |
| A. | 47.08 ma |
| B. | 47.08 ua |
| C. | 50 ua |
| D. | 0 ma |
| Answer» C. 50 ua | |
| 234. |
Which of the following is the correct relationship between base and emitter current of a BJT? |
| A. | ib = β ie |
| B. | ib = ie |
| C. | ib = (β + 1) ie |
| D. | ie = (β + 1) ib |
| Answer» E. | |
| 235. |
In CB configuration, the value of α=0.98A. A voltage drop of 4.9V is obtained across the resistor of 5KΩ when connected in collector circuit. Find the base current. |
| A. | 0.01ma |
| B. | 0.07ma |
| C. | 0.02ma |
| D. | 0.05ma |
| Answer» D. 0.05ma | |
| 236. |
Which of the following acts as a buffer? |
| A. | cc amplifier |
| B. | ce amplifier |
| C. | cb amplifier |
| D. | cascaded amplifier |
| Answer» B. ce amplifier | |
| 237. |
In the given circuit, find the equivalent resistance between A and B nodes. |
| A. | 100kΩ |
| B. | 50kΩ |
| C. | 40kΩ |
| D. | 60kΩ |
| Answer» C. 40kΩ | |
| 238. |
A transistor has hie =1KΩ and hfe=60 with an bypassed emitter resistor Re=1kΩ. What will be the input resistance and output resistance? |
| A. | 90kΩ and 50kΩ respectively |
| B. | 33kΩ and 45kΩ respectively |
| C. | 6kΩ and 40kΩ respectively |
| D. | 63kΩ and 40kΩ respectively |
| Answer» E. | |
| 239. |
A transistor has hie =2kΩ, hoe=25µmhos and hfe=60 with an unbypassed emitter resistor Re=1kΩ. What will be the input resistance and output resistance? |
| A. | 90kΩ and 50kΩ respectively |
| B. | 33kΩ and 45kΩ respectively |
| C. | 6kΩ and 40kΩ respectively |
| D. | 63kΩ and 40kΩ respectively |
| Answer» E. | |
| 240. |
005mmhos, hre=0. Find the output impedance if the lad resistance is 5kΩ. |
| A. | 5kΩ |
| B. | 4kΩ |
| C. | 20kΩ |
| D. | 15kΩ |
| Answer» C. 20kΩ | |
| 241. |
The feature of an approximate model of a transistor is |
| A. | it helps in quicker analysis |
| B. | it provides individual analysis for different configurations |
| C. | it helps in dc analysis |
| D. | ac analysis is not possible |
| Answer» B. it provides individual analysis for different configurations | |
| 242. |
What is the DC characteristic used to prove that the transistor is indeed biased in saturation mode? |
| A. | ic = βib |
| B. | ic > βib |
| C. | ic >> βib |
| D. | ic < βib |
| Answer» E. | |
| 243. |
For the circuit shown, find the quiescent point. |
| A. | none of the below |
| B. | (4v, 10ma) |
| C. | (10v, 3ma) |
| D. | (3ma, 10v) |
| Answer» D. (3ma, 10v) | |
| 244. |
Which of the following is true for a pnp transistor in saturation region? |
| A. | cb junction is reversed bias and the eb junction is forward bias |
| B. | cb junction is forward bias and the eb junction is forward bias |
| C. | cb junction is forward bias and the eb junction is reverse bias |
| D. | cb junction is reversed bias and the eb junction is reverse bias |
| Answer» C. cb junction is forward bias and the eb junction is reverse bias | |
| 245. |
Which of the following is true for a pnp transistor in active region? |
| A. | cb junction is reversed bias and the eb junction is forward bias |
| B. | cb junction is forward bias and the eb junction is forward bias |
| C. | cb junction is forward bias and the eb junction is reverse bias |
| D. | cb junction is reversed bias and the eb junction is reverse bias |
| Answer» B. cb junction is forward bias and the eb junction is forward bias | |
| 246. |
Which of the following is true for a npn transistor in the saturation region? |
| A. | the potential difference between the collector and the base is approximately 0.2v |
| B. | the potential difference between the collector and the base is approximately 0.3v |
| C. | the potential difference between the collector and the base is approximately 0.4v |
| D. | the potential difference between the collector and the base is approximately 0.5v |
| Answer» E. | |
| 247. |
Which of the following is true for the active region of an npn transistor? |
| A. | the collector current is directly proportional to the base current |
| B. | the potential difference between the emitter and the collector is less than 0.4 v |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» D. none of the mentioned | |
| 248. |
For a pnp transistor in the active region the value of Vce (potential difference between the collector and the base) is |
| A. | less than 0.3v |
| B. | less than 3v |
| C. | greater than 0.3v |
| D. | greater than 3v |
| Answer» B. less than 3v | |
| 249. |
Which of the following is true for a typical active region of an npn transistor? |
| A. | the potential difference between the emitter and the collector is less than 0.5 v |
| B. | the potential difference between the emitter and the collector is less than 0.4 v |
| C. | the potential difference between the emitter and the collector is less than 0.3 v |
| D. | the potential difference between the emitter and the collector is less than 0.2 v |
| Answer» D. the potential difference between the emitter and the collector is less than 0.2 v | |
| 250. |
The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is |
| A. | -0.2 v |
| B. | -0.5v |
| C. | 0.2 v |
| D. | 0.5 v |
| Answer» C. 0.2 v | |