1.

What is Piranha Solution?

A. It is a 3:1 to 5:1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate
B. It is a 3:1 to 5:1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning
C. It is a 3:1 to 5:1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon
D. It is a 3:1 to 5:1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning
Answer» E.


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