MCQOPTIONS
Bookmark
Saved Bookmarks
→
Vlsi
→
Characteristics Npn Bipolar Transistors
→
The dynamic switching energy must exceed the capac...
1.
The dynamic switching energy must exceed the capacitive load.
A.
true
B.
false
Answer» B. false
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
Pinch-off voltage is ______ to channel concentration density.
Threshold voltage is independent of pinch-off voltage.
Impurity concentration should be
The drain current is independent of
Threshold voltage is ________ on implant depth.
In D-MESFET, voltage swing is less than 1V.
Standard deviation of threshold voltage should be ______ of logic voltage swing.
To keep dynamic switching energy small
The dynamic switching energy must exceed the capacitive load.
The threshold voltage is sensitive to
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply
Your experience on this site will be improved by allowing cookies. Read
Cookie Policy
Reject
Allow cookies