MCQOPTIONS
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MCQOPTIONS
This section includes 236 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In series resonance, there is ___________ |
| A. | oltage amplification |
| B. | urrent amplification |
| C. | oth voltage and current amplification |
| D. | one of the above |
| Answer» B. urrent amplification | |
| 2. |
In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage? |
| A. | V |
| B. | V |
| C. | V |
| D. | V |
| Answer» E. | |
| 3. |
The voltage gain of a tuned amplifier is ___________ at resonant frequency |
| A. | inimum |
| B. | aximum |
| C. | alf-way between maximum and minimum |
| D. | ero |
| Answer» C. alf-way between maximum and minimum | |
| 4. |
The disadvantage of voltage divider bias is that it has ___________ |
| A. | igh stability factor |
| B. | ow base current |
| C. | any resistors |
| D. | one of the above |
| Answer» D. one of the above | |
| 5. |
The collector-base junction in a transistor has ___________ |
| A. | orward bias at all times |
| B. | everse bias at all times |
| C. | ow resistance |
| D. | one of the above |
| Answer» C. ow resistance | |
| 6. |
A transistor has ___________ |
| A. | ne pn junction |
| B. | wo pn junctions |
| C. | hree pn junctions |
| D. | our pn junctions |
| Answer» C. hree pn junctions | |
| 7. |
As the temperature of a transistor goes up, the base emitter resistance ___________ |
| A. | ecreases |
| B. | ncreases |
| C. | emains the same |
| D. | one of the above |
| Answer» B. ncreases | |
| 8. |
A tuned amplifier uses ___________ load |
| A. | esistive |
| B. | apacitive |
| C. | C tank |
| D. | nductive |
| Answer» D. nductive | |
| 9. |
For frequencies above the resonant frequency , a series LC circuit behaves as a ___________ load |
| A. | esistive |
| B. | nductive |
| C. | apacitive |
| D. | one of the above |
| Answer» C. apacitive | |
| 10. |
For frequencies below resonant frequency, a series LC circuit behaves as a ___________ load |
| A. | esistive |
| B. | apacitive |
| C. | nductive |
| D. | one of the above |
| Answer» C. nductive | |
| 11. |
For frequencies above the resonant frequency, a parallel LC circuit behaves as a ___________ load |
| A. | apacitive |
| B. | esistive |
| C. | nductive |
| D. | one of the above |
| Answer» B. esistive | |
| 12. |
At series or parallel resonance, the circuit behaves as a ___________ load |
| A. | apacitive |
| B. | esistive |
| C. | nductive |
| D. | one of the above |
| Answer» C. nductive | |
| 13. |
At series resonance, the net reactive component of circuit current is ___________ |
| A. | ero |
| B. | nductive |
| C. | apacitive |
| D. | one of the above |
| Answer» B. nductive | |
| 14. |
At parallel resonance, the net reactive component circuit current is ___________ |
| A. | apacitive |
| B. | ero |
| C. | nductive |
| D. | one of the above |
| Answer» C. nductive | |
| 15. |
At parallel resonance, the line current is ___________ |
| A. | inimum |
| B. | aximum |
| C. | uite large |
| D. | one of the above |
| Answer» B. aximum | |
| 16. |
At series resonance, the phase angle between applied voltage and circuit is ___________ |
| A. | 0° |
| B. | 80° |
| C. | ° |
| D. | one of the above |
| Answer» D. one of the above | |
| 17. |
The point of intersection of d.c. and a.c. load lines represents ___________ |
| A. | perating point |
| B. | urrent gain |
| C. | oltage gain |
| D. | one of the above |
| Answer» B. urrent gain | |
| 18. |
Operating point represents ___________ |
| A. | alues of IC and VCE when signal is applied |
| B. | he magnitude of signal |
| C. | ero signal values of IC and VCE |
| D. | one of the above |
| Answer» D. one of the above | |
| 19. |
The circuit that provides the best stabilization of operating point is ___________ |
| A. | ase resistor bias |
| B. | ollector feedback bias |
| C. | otential divider bias |
| D. | one of the above |
| Answer» D. one of the above | |
| 20. |
The Q of a tuned circuit refers to the property of ___________ |
| A. | ensitivity |
| B. | idelity |
| C. | electivity |
| D. | one of the above |
| Answer» D. one of the above | |
| 21. |
The current IB is ___________ |
| A. | lectron current |
| B. | ole current |
| C. | onor ion current |
| D. | cceptor ion current |
| Answer» B. ole current | |
| 22. |
At the base emitter junctions of a transistor, one finds ___________ |
| A. | reverse bias |
| B. | wide depletion layer |
| C. | ow resistance |
| D. | one of the above |
| Answer» D. one of the above | |
| 23. |
In a parallel LC circuit, if the input signal frequency is increased above resonant frequency then ___________ |
| A. | L increases and XC decreases |
| B. | L decreases and XC increases |
| C. | oth XL and XC increase |
| D. | oth XL and XC decrease |
| Answer» B. L decreases and XC increases | |
| 24. |
The operating point ___________ on the a.c. load line |
| A. | lso line |
| B. | oes not lie |
| C. | ay or may not lie |
| D. | ata insufficient |
| Answer» B. oes not lie | |
| 25. |
The operating point is also called the ___________ |
| A. | ut off point |
| B. | uiescent point |
| C. | aturation point |
| D. | one of the above |
| Answer» C. aturation point | |
| 26. |
For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than |
| A. | 0 IB |
| B. | IB |
| C. | IB |
| D. | IB |
| Answer» B. IB | |
| 27. |
In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor |
| A. | 5 |
| B. | 0 |
| C. | 00 |
| D. | 00 |
| Answer» C. 00 | |
| 28. |
For germanium transistor amplifier, VCE should ___________ for faithful amplification |
| A. | e zero |
| B. | e 0.2 V |
| C. | ot fall below 0.7 V |
| D. | one of the above |
| Answer» D. one of the above | |
| 29. |
The most commonly used semiconductor in the manufacture of a transistor is ___________ |
| A. | ermanium |
| B. | ilicon |
| C. | arbon |
| D. | one of the above |
| Answer» C. arbon | |
| 30. |
The output impedance of a transistor is ___________ |
| A. | igh |
| B. | ero |
| C. | ow |
| D. | ery low |
| Answer» B. ero | |
| 31. |
The value of a of a transistor is ___________ |
| A. | ore than 1 |
| B. | ess than 1 |
| C. | |
| Answer» C. | |
| 32. |
The input impedance of a transistor is ___________ |
| A. | igh |
| B. | ow |
| C. | ery high |
| D. | lmost zero |
| Answer» C. ery high | |
| 33. |
The Q of a tuned amplifier is 50. If the resonant frequency for the amplifier is 1000kHZ, then bandwidth is ___________ |
| A. | 0kHz |
| B. | 0 kHz |
| C. | 0 kHz |
| D. | 0 kHz |
| Answer» E. | |
| 34. |
The stabilisation of operating point in potential divider method is provided by ___________ |
| A. | E consideration |
| B. | C consideration |
| C. | CC consideration |
| D. | one of the above |
| Answer» B. C consideration | |
| 35. |
A class C amplifier always drives ___________ load |
| A. | pure resistive |
| B. | pure inductive |
| C. | pure capacitive |
| D. | resonant tank |
| Answer» E. | |
| 36. |
In a particular biasing circuit, the value of RE is about |
| A. | 0 kΩ |
| B. | MO |
| C. | 00 kΩ |
| D. | 00 O |
| Answer» E. | |
| 37. |
Thermal runaway occurs when ___________ |
| A. | ollector is reverse biased |
| B. | ransistor is not biased |
| C. | mitter is forward biased |
| D. | unction capacitance is high |
| Answer» C. mitter is forward biased | |
| 38. |
For proper operation of the transistor, its collector should have ___________ |
| A. | roper forward bias |
| B. | roper reverse bias |
| C. | ery small size |
| D. | one of the above |
| Answer» C. ery small size | |
| 39. |
The number of depletion layers in a transistor is ___________ |
| A. | our |
| B. | hree |
| C. | ne |
| D. | wo |
| Answer» E. | |
| 40. |
In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ? |
| A. | 000 Ω |
| B. | 400 Ω |
| C. | 00 Ω |
| D. | 600 Ω |
| Answer» D. 600 Ω | |
| 41. |
The base resistor method is generally used in |
| A. | mplifier circuits |
| B. | witching circuits |
| C. | ectifier circuits |
| D. | one of the above |
| Answer» C. ectifier circuits | |
| 42. |
The emitter of a transistor is ___________ doped |
| A. | ightly |
| B. | eavily |
| C. | oderately |
| D. | one of the above |
| Answer» C. oderately | |
| 43. |
The value of VBE ___________ |
| A. | epends upon IC to moderate extent |
| B. | s almost independent of IC |
| C. | s strongly dependant on IC |
| D. | one of the above |
| Answer» C. s strongly dependant on IC | |
| 44. |
Transistor biasing is generally provided by a ___________ |
| A. | iasing circuit |
| B. | ias battery |
| C. | iode |
| D. | one of the above |
| Answer» B. ias battery | |
| 45. |
In parallel resonance, the circuit impedance is ___________ |
| A. | /LR |
| B. | /LC |
| C. | R/L |
| D. | /CR |
| Answer» E. | |
| 46. |
The arrow in the symbol of a transistor indicates the direction of ___________ |
| A. | lectron current in the emitter |
| B. | lectron current in the collector |
| C. | ole current in the emitter |
| D. | onor ion current |
| Answer» D. onor ion current | |
| 47. |
In the double tuned circuit, if the mutual inductance between the two tuned circuits is decreased, the level of resonance curve ___________ |
| A. | emains the same |
| B. | s lowered |
| C. | s raised |
| D. | one of the above |
| Answer» D. one of the above | |
| 48. |
The leakage current in CE arrangement is ___________ that in CB arrangement |
| A. | ore than |
| B. | ess than |
| C. | he same as |
| D. | one of the above |
| Answer» B. ess than | |
| 49. |
The relation between ß and a is ___________ |
| A. | = 1 / (1 – a ) |
| B. | = (1 – a ) / a |
| C. | = a / (1 – a ) |
| D. | = a / (1 + a ) |
| Answer» D. = a / (1 + a ) | |
| 50. |
At series or parallel resonance, the circuit power factor is ___________ |
| A. | % |
| B. | % |
| C. | 0% |
| D. | % |
| Answer» D. % | |