MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Which has low breakdown field? |
| A. | silicon |
| B. | GaAs |
| C. | gallium |
| D. | silicon and gallium |
| Answer» B. GaAs | |
| 2. |
Silicon has a greater density than GaAs. |
| A. | true |
| B. | false |
| Answer» C. | |
| 3. |
Which has greater intrinsic resistivity? |
| A. | silicon |
| B. | gallium arsenide |
| C. | gallium |
| D. | silicon and gallium |
| Answer» C. gallium | |
| 4. |
In GaAs __________ has more intrinsic mobility. |
| A. | electron |
| B. | holes |
| C. | proton |
| D. | neutron |
| Answer» B. holes | |
| 5. |
_______ can be used as light emitters. |
| A. | forward biased pn junction |
| B. | reverse biased pn junction |
| C. | forward biased pnp junction |
| D. | reverse biased pnp junction |
| Answer» B. reverse biased pn junction | |
| 6. |
Larger energy bandgap _____ parasitic capacitances. |
| A. | increases |
| B. | decreases |
| C. | maintains constant |
| D. | does not affect |
| Answer» C. maintains constant | |
| 7. |
Saturated drift velocity of gallium is _______ to that of silicon. |
| A. | greater |
| B. | lesser |
| C. | approximately same |
| D. | does not depend on |
| Answer» D. does not depend on | |
| 8. |
Electron mobility of gallium arsenide is _______ that of silicon. |
| A. | greater than |
| B. | lesser than |
| C. | same as |
| D. | does not depend on |
| Answer» B. lesser than | |
| 9. |
The GaAs structure has upto _______ metal. |
| A. | two-layer |
| B. | three-layer |
| C. | four-layer |
| D. | one-layer |
| Answer» D. one-layer | |
| 10. |
The GaAs fabrication has _________ gate geometry. |
| A. | less than one micron |
| B. | less than two micron |
| C. | more than one micron |
| D. | more than two micron |
| Answer» B. less than two micron | |