MCQOPTIONS
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MCQOPTIONS
This section includes 21 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
________ is used with silicon to satisfy the need for very high speed integrated technology. |
| A. | gallium oxide |
| B. | gallium arsenide |
| C. | silicon dioxide |
| D. | aluminium |
| Answer» C. silicon dioxide | |
| 2. |
Silicon logic is faster than gallium arsenide. |
| A. | true |
| B. | false |
| Answer» C. | |
| 3. |
______ technology is used to provide for faster devices. |
| A. | silicon based FET technology |
| B. | silicon based MOS technology |
| C. | gallium arsenide based MOS technology |
| D. | gallium arsenide based VLSI technology |
| Answer» E. | |
| 4. |
At ______ length, the holes start to run into velocity saturation. |
| A. | shorter |
| B. | larger |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» B. larger | |
| 5. |
When dimensions are scaled down ______ tends to a constant value. |
| A. | current drive from p-transistors |
| B. | current drive from n-transistors |
| C. | voltage drive from p-transistors |
| D. | voltage drive from n-transistors |
| Answer» C. voltage drive from p-transistors | |
| 6. |
Current is dependent on ________ when saturation velocity occurs. |
| A. | mobility |
| B. | channel length |
| C. | saturation velocity |
| D. | transconductance |
| Answer» D. transconductance | |
| 7. |
When velocity saturation occurs, Idsat is ______ to Vsat. |
| A. | inversely proportional |
| B. | directly proportional |
| C. | logarithmically proportional |
| D. | not related |
| Answer» C. logarithmically proportional | |
| 8. |
Current drive is ______ to mobility. |
| A. | directly proportional |
| B. | inversely proportional |
| C. | logarithmically proportional |
| D. | exponentially proportional |
| Answer» B. inversely proportional | |
| 9. |
AT________LENGTH,_THE_HOLES_START_TO_RUN_INTO_VELOCITY_SATURATION?$ |
| A. | shorter |
| B. | larger |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» B. larger | |
| 10. |
Silicon logic is faster than gallium arsenide.$ |
| A. | true |
| B. | false |
| Answer» C. | |
| 11. |
______ technology is used to provide for faster devices$ |
| A. | silicon based FET technology |
| B. | silicon based MOS technology |
| C. | gallium arsenide based MOS technology |
| D. | gallium arsenide based VLSI technology |
| Answer» E. | |
| 12. |
________ is used with silicon to satisfy the need for very high speed integrated technology |
| A. | gallium oxide |
| B. | gallium arsenide |
| C. | silicondioxide |
| D. | aluminium |
| Answer» C. silicondioxide | |
| 13. |
When dimensions are scaled down, ______ tends to a constant valu? |
| A. | current drive from p-transistors |
| B. | current drive from n-transistors |
| C. | voltage drive from p-transistors |
| D. | voltage drive from n-transistors |
| Answer» C. voltage drive from p-transistors | |
| 14. |
Velocity saturation occurs at |
| A. | lower electric field strength in n-devices |
| B. | higher electric field strength |
| C. | intermittent electric field strength |
| D. | lower electric field strength in p-devices |
| Answer» B. higher electric field strength | |
| 15. |
Transconductance is independent of |
| A. | channel width |
| B. | channel length |
| C. | material |
| D. | channel depth |
| Answer» C. material | |
| 16. |
Current is dependent on ________ when saturation velocity occurs |
| A. | mobility |
| B. | channel length |
| C. | saturation velocity |
| D. | transconductance |
| Answer» D. transconductance | |
| 17. |
When velocity saturation occurs, Idsat is ______ to Vsat |
| A. | inversely proportional |
| B. | directly proportional |
| C. | logarithmically proportional |
| D. | not related |
| Answer» C. logarithmically proportional | |
| 18. |
Current drive is ______ to mobility |
| A. | directly proportional |
| B. | inversely proportional |
| C. | logarithmically proportional |
| D. | exponentially proportional |
| Answer» B. inversely proportional | |
| 19. |
As the channel length is scaled down, influence of mobility |
| A. | increases |
| B. | decreases |
| C. | remains the same |
| D. | does not affect |
| Answer» C. remains the same | |
| 20. |
In CMOS devices, which has slower performance? |
| A. | n-transistor |
| B. | p-transistor |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» C. all of the mentioned | |
| 21. |
Submicron CMOS technology is |
| A. | faster |
| B. | slower |
| C. | large |
| D. | slow and large |
| Answer» B. slower | |