MCQOPTIONS
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MCQOPTIONS
This section includes 18 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Processing of the device is better using ___________ |
| A. | polysilicon |
| B. | silicides |
| C. | polysilicon & silicides |
| D. | none of the mentioned |
| Answer» B. silicides | |
| 2. |
Deposition of metal can be done by co-evaporation. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 3. |
Deposition of metal or silicon alloy can be done by ___________ |
| A. | sputtering |
| B. | evaporation |
| C. | sputtering and evaporation |
| D. | deposition should not be made |
| Answer» D. deposition should not be made | |
| 4. |
Z can be given as the ration of ___________ |
| A. | lower channel by upper channel |
| B. | upper channel by lower channel |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» C. all of the mentioned | |
| 5. |
For 1.2 micron technology, what is the Rs value for diffusion? |
| A. | 20-40 |
| B. | 20-45 |
| C. | 15-30 |
| D. | 25-50 |
| Answer» C. 15-30 | |
| 6. |
For 2 micron technology, what is the Rs value for polysilicon? |
| A. | 10-40 |
| B. | 20-50 |
| C. | 15-30 |
| D. | 15-100 |
| Answer» D. 15-100 | |
| 7. |
For 5 micron technology, What is the Rs value for a metal? |
| A. | 0.03 |
| B. | 0.04 |
| C. | 0.02 |
| D. | 0.01 |
| Answer» B. 0.04 | |
| 8. |
Area A of a slab can be given as ____________ |
| A. | t * W |
| B. | t / W |
| C. | L * W |
| D. | L * t |
| Answer» B. t / W | |
| 9. |
PROCESSING_OF_THE_DEVICE_IS_BETTER_USING?$ |
| A. | polysilicon |
| B. | silicides |
| C. | both of the mentioned |
| D. | none of the mentioned |
| Answer» B. silicides | |
| 10. |
Deposition of metal can be done by co-evaporation? |
| A. | true |
| B. | false |
| Answer» B. false | |
| 11. |
Deposition of metal or silicon alloy can be done by |
| A. | sputtering |
| B. | evaporation |
| C. | sputtering and evaporation |
| D. | deposition should not be made |
| Answer» D. deposition should not be made | |
| 12. |
Z can be given as the ration of |
| A. | lower channel by upper channel |
| B. | upper channel by lower channel |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» C. all of the mentioned | |
| 13. |
What is the relationship between channel resistance and sheet resistance? |
| A. | R = Rs |
| B. | R = Z*Rs |
| C. | R = Z/Rs |
| D. | R = Rs/Z |
| Answer» C. R = Z/Rs | |
| 14. |
For 1.2 micron technology, the Rs value for diffusion is |
| A. | 20-40 |
| B. | 20-45 |
| C. | 15-30 |
| D. | 25-50 |
| Answer» C. 15-30 | |
| 15. |
Which has higher Rs values? |
| A. | n-diffusion |
| B. | p-diffusion |
| C. | both of the mentioned |
| D. | none of the mentioned |
| Answer» C. both of the mentioned | |
| 16. |
For 2 micron technology, the Rs value for polysilicon is |
| A. | 10-40 |
| B. | 20-50 |
| C. | 15-30 |
| D. | 15-100 |
| Answer» D. 15-100 | |
| 17. |
For 5 micron technology, the Rs value for a metal is |
| A. | 0.03 |
| B. | 0.04 |
| C. | 0.02 |
| D. | 0.01 |
| Answer» B. 0.04 | |
| 18. |
Area A of a slab can be given as |
| A. | t * W |
| B. | t / W |
| C. | L * W |
| D. | L * t |
| Answer» B. t / W | |