MCQOPTIONS
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MCQOPTIONS
This section includes 25 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The MOS transistor is non conducting when? |
| A. | zero source bias |
| B. | zero threshold voltage |
| C. | zero gate bias |
| D. | zero drain bias |
| Answer» D. zero drain bias | |
| 2. |
What is a MOS transistor? |
| A. | minority carrier device |
| B. | majority carrier device |
| C. | majority & minority carrier device |
| D. | none of the mentioned |
| Answer» C. majority & minority carrier device | |
| 3. |
Surface mobility depends on ___________ |
| A. | effective drain voltage |
| B. | effective gate voltage |
| C. | channel length |
| D. | effective source voltage |
| Answer» C. channel length | |
| 4. |
A fast circuit requires ___________ |
| A. | high gm |
| B. | low gm |
| C. | does not depend on gm |
| D. | low cost |
| Answer» B. low gm | |
| 5. |
Switching speed of a MOS device depends on ___________ |
| A. | gate voltage above a threshold |
| B. | carrier mobility |
| C. | length channel |
| D. | all of the mentioned |
| Answer» E. | |
| 6. |
Ids is _______ to length L of the channel. |
| A. | directly proportional |
| B. | inversely proportional |
| C. | not related |
| D. | logarithmically related |
| Answer» C. not related | |
| 7. |
Increasing the transconductance ___________ |
| A. | increases input capacitance |
| B. | decreasing area occupied |
| C. | decreasing input capacitance |
| D. | decrease in output capacitance |
| Answer» B. decreasing area occupied | |
| 8. |
Transconductance can be increased by ___________ |
| A. | decreasing the width |
| B. | increasing the width |
| C. | increasing the length |
| D. | decreasing the length |
| Answer» C. increasing the length | |
| 9. |
Transconductance gives the relationship between ___________ |
| A. | input current and output voltage |
| B. | output current and input voltage |
| C. | input current and input voltage |
| D. | output current and output voltage |
| Answer» C. input current and input voltage | |
| 10. |
Increasing Vsb _______ the threshold voltage. |
| A. | does not effect |
| B. | decreases |
| C. | increases |
| D. | exponentially increases |
| Answer» D. exponentially increases | |
| 11. |
According to body effect, substrate is biased with respect to ___________ |
| A. | source |
| B. | drain |
| C. | gate |
| D. | Vss |
| Answer» B. drain | |
| 12. |
The work function difference is negative for ____________ |
| A. | silicon substrate |
| B. | polysilicon gate |
| C. | silicon substrate & polysilicon gate |
| D. | none of the mentioned |
| Answer» D. none of the mentioned | |
| 13. |
A_FAST_CIRCUIT_REQUIRES?$ |
| A. | high gm |
| B. | low gm |
| C. | does not depend on gm |
| D. | low cost |
| Answer» B. low gm | |
| 14. |
MOS transistor is a$ |
| A. | minority carrier device |
| B. | majority carrier device |
| C. | majority & minority carrier device |
| D. | none of the mentioned |
| Answer» C. majority & minority carrier device | |
| 15. |
Surface mobility depends on$ |
| A. | effective drain voltage |
| B. | effective gate voltage |
| C. | channel length |
| D. | effective source voltage |
| Answer» C. channel length | |
| 16. |
The MOS transistor is non conducting when |
| A. | zero source bias |
| B. | zero threshold voltage |
| C. | zero gate bias |
| D. | zero drain bias |
| Answer» D. zero drain bias | |
| 17. |
Switching speed of a MOS device depends o? |
| A. | gate voltage above threshold |
| B. | carrier mobility |
| C. | length channel |
| D. | all of the mentioned |
| Answer» E. | |
| 18. |
Ids is _______ to length L of the channel |
| A. | directly proportional |
| B. | inversely proportional |
| C. | not related |
| D. | logarithmically related |
| Answer» C. not related | |
| 19. |
Increasing the transconductance |
| A. | increases input capacitance |
| B. | decreasing area occupied |
| C. | decreasing input capacitance |
| D. | decrease in output capacitance |
| Answer» B. decreasing area occupied | |
| 20. |
Transconductance can be increased by |
| A. | decreasing the width |
| B. | increasing the width |
| C. | increasing the length |
| D. | decreasing the length |
| Answer» C. increasing the length | |
| 21. |
Transconductance gives the relationship between |
| A. | input current and output voltage |
| B. | output current and input voltage |
| C. | input current and input voltage |
| D. | output current and output voltage |
| Answer» C. input current and input voltage | |
| 22. |
Increasing Vsb, _______ the threshold voltage |
| A. | does not effect |
| B. | decreases |
| C. | increases |
| D. | exponentially increases |
| Answer» D. exponentially increases | |
| 23. |
According to body effect, substrate is biased with respect to |
| A. | source |
| B. | drain |
| C. | gate |
| D. | Vss |
| Answer» B. drain | |
| 24. |
Substrate bias voltage is positive for nMOS. |
| A. | true |
| B. | false |
| Answer» C. | |
| 25. |
The work function difference is neagative for |
| A. | silicon substrate |
| B. | polysilicon gate |
| C. | both of the mentioned |
| D. | none of the mentioned |
| Answer» D. none of the mentioned | |