 
			 
			MCQOPTIONS
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				This section includes 11 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. | Rise time and fall time can be equalized by | 
| A. | βn = βp | 
| B. | βn = 2βp | 
| C. | βp = 2βn | 
| D. | βn = 1/2βp | 
| Answer» B. βn = 2βp | |
| 2. | Load capacitance can be minimized by | 
| A. | increasing A | 
| B. | decreasing A | 
| C. | increasing Psd | 
| D. | does not depend on A | 
| Answer» C. increasing Psd | |
| 3. | Switching power dissipation can be given as | 
| A. | Cl x Vdd x f | 
| B. | Vdd2 x f | 
| C. | Cl x Vdd2 | 
| D. | Cl x Vdd2 x f | 
| Answer» E. | |
| 4. | The ratio of Wp/Wn can be given as | 
| A. | 1:2 | 
| B. | 2:1 | 
| C. | 1:1 | 
| D. | 2:2 | 
| Answer» D. 2:2 | |
| 5. | The area of CMOS inverter is proportional to | 
| A. | area of n device | 
| B. | area of p device | 
| C. | total area of n and p device | 
| D. | square of minimum feature size | 
| Answer» D. square of minimum feature size | |
| 6. | For a regular 8:1 inverter, the transition delay is given as | 
| A. | 10Ʈ | 
| B. | 20Ʈ | 
| C. | 21Ʈ | 
| D. | 25Ʈ | 
| Answer» D. 25Ʈ | |
| 7. | In minimum size nMOS 8:1 inverter, the logic 1 to 0 transition delay is given as | 
| A. | 5Ʈ | 
| B. | 20Ʈ | 
| C. | 40Ʈ | 
| D. | 50Ʈ | 
| Answer» B. 20Ʈ | |
| 8. | In minimum size nMOS 8:1 inverter, the logic 0 to 1 transition delay is given as | 
| A. | 5Ʈ | 
| B. | 20Ʈ | 
| C. | 40Ʈ | 
| D. | 50Ʈ | 
| Answer» D. 50Ʈ | |
| 9. | In inverter during logic 1 to 0 transition, capacitance discharges at | 
| A. | pull-up resistance | 
| B. | pull-down resistance | 
| C. | both pull-up and pull-down | 
| D. | at gate | 
| Answer» C. both pull-up and pull-down | |
| 10. | When does the longest delay occur in 8:1 inverters? | 
| A. | during 1 to 0 transition | 
| B. | during 0 to 1 transition | 
| C. | during faster speed | 
| D. | delays are always short | 
| Answer» C. during faster speed | |
| 11. | Reduction in power dissipation can be brought by | 
| A. | increasing transistor area | 
| B. | decreasing transistor area | 
| C. | increasing transistor feature size | 
| D. | decreasing transistor feature size | 
| Answer» B. decreasing transistor area | |