MCQOPTIONS
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MCQOPTIONS
This section includes 26 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
_______ is used to suppress unwanted conduction. |
| A. | phosphorus |
| B. | boron |
| C. | silicon |
| D. | oxygen |
| Answer» C. silicon | |
| 2. |
SIlicon-di-oxide is a good insulator. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 3. |
Interconnection pattern is made on ____________ |
| A. | polysilicon layer |
| B. | silicon-di-oxide layer |
| C. | metal layer |
| D. | diffusion layer |
| Answer» D. diffusion layer | |
| 4. |
Contact cuts are made in ____________ |
| A. | source |
| B. | drain |
| C. | metal layer |
| D. | diffusion layer |
| Answer» B. drain | |
| 5. |
In diffusion process ______ impurity is desired. |
| A. | n type |
| B. | p type |
| C. | np type |
| D. | none of the mentioned |
| Answer» B. p type | |
| 6. |
Heavily doped polysilicon is deposited using ____________ |
| A. | chemical vapour decomposition |
| B. | chemical vapour deposition |
| C. | chemical deposition |
| D. | dry deposition |
| Answer» C. chemical deposition | |
| 7. |
In nMOS fabrication, etching is done using ____________ |
| A. | plasma |
| B. | hydrochloric acid |
| C. | sulphuric acid |
| D. | sodium chloride |
| Answer» B. hydrochloric acid | |
| 8. |
Which is the commonly used bulk substrate in nMOS fabrication? |
| A. | silicon crystal |
| B. | silicon-on-sapphire |
| C. | phosphorus |
| D. | silicon-di-oxide |
| Answer» D. silicon-di-oxide | |
| 9. |
In nMOS device, gate material could be ____________ |
| A. | silicon |
| B. | polysilicon |
| C. | boron |
| D. | phosphorus |
| Answer» C. boron | |
| 10. |
The photoresist layer is exposed to ____________ |
| A. | Visible light |
| B. | Ultraviolet light |
| C. | Infra red light |
| D. | LED |
| Answer» C. Infra red light | |
| 11. |
______________ impurities are added to the wafer of the crystal. |
| A. | n impurities |
| B. | p impurities |
| C. | siicon |
| D. | crystal |
| Answer» C. siicon | |
| 12. |
nMOS fabrication process is carried out in ____________ |
| A. | thin wafer of a single crystal |
| B. | thin wafer of multiple crystals |
| C. | thick wafer of a single crystal |
| D. | thick wafer of multiple crystals |
| Answer» B. thin wafer of multiple crystals | |
| 13. |
CONTACT_CUTS_ARE_MADE_IN?$ |
| A. | source |
| B. | drain |
| C. | metal layer |
| D. | diffusion layer |
| Answer» B. drain | |
| 14. |
SIlicon-di-oxide is a good insulator.$ |
| A. | true |
| B. | false |
| Answer» B. false | |
| 15. |
Interconnection pattern is made on$ |
| A. | polysilicon layer |
| B. | silicon-di-oxide layer |
| C. | metal layer |
| D. | diffusion layer |
| Answer» D. diffusion layer | |
| 16. |
Which is used for the interconnection? |
| A. | boron |
| B. | oxygen |
| C. | aluminium |
| D. | silicon |
| Answer» D. silicon | |
| 17. |
_______ is used to suppress unwanted conduction |
| A. | phosporus |
| B. | boron |
| C. | silicon |
| D. | oxygen |
| Answer» C. silicon | |
| 18. |
In diffusion process, ______ impurity is desire? |
| A. | n type |
| B. | p type |
| Answer» B. p type | |
| 19. |
Heavily doped polysilicon is deposited using |
| A. | chemical vapour decomposition |
| B. | chemical vapour deposition |
| C. | chemical deposition |
| D. | dry deposition |
| Answer» C. chemical deposition | |
| 20. |
In nMOS fabrication, etching is done using |
| A. | plasma |
| B. | hydrochloric acid |
| C. | sulphuric acid |
| D. | sodium chloride |
| Answer» B. hydrochloric acid | |
| 21. |
The commonly used bulk substrate in nMOS fabrication is |
| A. | silicon crystal |
| B. | silicon-on-sapphire |
| C. | phosporus |
| D. | silicon-di-oxide |
| Answer» D. silicon-di-oxide | |
| 22. |
In nMOS device, gate material could be |
| A. | silicon |
| B. | polysilicon |
| C. | boron |
| D. | phosporus |
| Answer» C. boron | |
| 23. |
The photoresist layer is exposed to |
| A. | visible light |
| B. | ultraviolet light |
| C. | infra red light |
| D. | LED |
| Answer» C. infra red light | |
| 24. |
What kind of substrate is provided above the barrier to dopants? |
| A. | insulating |
| B. | conducting |
| C. | silicon |
| D. | semi conducting |
| Answer» B. conducting | |
| 25. |
_____ impurities are added to the wafer of the crystal |
| A. | n impurities |
| B. | p impurities |
| C. | siicon |
| D. | crystal |
| Answer» C. siicon | |
| 26. |
nMOS fabrication process is carried out in |
| A. | thin wafer of a single crystal |
| B. | thin wafer of multiple crystals |
| C. | thick wafer of a single crystal |
| D. | thick wafer of multiple crystals |
| Answer» B. thin wafer of multiple crystals | |