MCQOPTIONS
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MCQOPTIONS
This section includes 16 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Which of these invertors is more efficient? |
| A. | Depletion mode n-MOS inverter |
| B. | pMOS inverter |
| C. | CMOS inverter |
| D. | Resistive load nMOS inverter |
| Answer» D. Resistive load nMOS inverter | |
| 2. |
The switching threshold voltage VTH for an ideal inverter is equal to: |
| A. | (VDD-VOL)/2 |
| B. | VDD |
| C. | (VDD)/2 |
| D. | 0 |
| Answer» D. 0 | |
| 3. |
When the input of the CMOS inverter is equal to Inverter Threshold Voltage Vth, the transistors are operating in: |
| A. | N-MOS is cutoff, p-MOS is in Saturation |
| B. | P-MOS is cutoff, n-MOS is in Saturation |
| C. | Both the transistors are in linear region |
| D. | Both the transistors are in saturation region |
| Answer» E. | |
| 4. |
In the CMOS inverter the output voltage is measured across: |
| A. | Drain of n-MOS transistor and ground |
| B. | Source of p-MOS transistor and ground |
| C. | Source of n-MOS transistor and source of p-MOS transistor |
| D. | Gate of p-MOS transistor and Gate of n-MOS transistor |
| Answer» B. Source of p-MOS transistor and ground | |
| 5. |
The CMOS inverter consists of: |
| A. | Enhancement mode n-MOS transistor and depletion mode p-MOS transistor |
| B. | Enhancement mode p-MOS transistor and depletion mode n-MOS transistor |
| C. | Enhancement mode p-MOS transistor and enhancement mode p-MOS transistor |
| D. | Enhancement mode p-MOS transistor and enhancement mode n-MOS transistor |
| Answer» E. | |
| 6. |
WHEN_THE_INPUT_OF_THE_CMOS_INVERTER_IS_EQUAL_TO_INVERTER_THRESHOLD_VOLTAGE_VTH,_THE_TRANSISTORS_ARE_OPERATING_IN:?$ |
| A. | N-MOS is cutoff, p-MOS is in Saturation |
| B. | P-MOS is cutoff, n-MOS is in Saturation |
| C. | Both the transistors are in linear region |
| D. | Both the transistors are in saturation region |
| Answer» E. | |
| 7. |
The switching threshold voltage VTH for an ideal inverter is equal to:$ |
| A. | (VDD-VOL)/2 |
| B. | VDD |
| C. | (VDD)/2 |
| D. | 0 |
| Answer» D. 0 | |
| 8. |
In the CMOS inverter the output voltage is measured across? |
| A. | Drain of n-MOS transistor and ground |
| B. | Source of p-MOS transistor and ground |
| C. | Source of n-MOS transistor and source of p-MOS transistor |
| D. | Gate of p-MOS transistor and Gate of n-MOS transistor |
| Answer» B. Source of p-MOS transistor and ground | |
| 9. |
The CMOS inverter consist of: |
| A. | Enhancement mode n-MOS transistor and depletion mode p-MOS transistor |
| B. | Enhancement mode p-MOS transistor and depletion mode n-MOS transistor |
| C. | Enhancement mode p-MOS transistor and enhancement mode p-MOS transistor |
| D. | Enhancement mode p-MOS transistor and enhancement mode n-MOS transistor |
| Answer» E. | |
| 10. |
The enhancement mode n-MOS load inverter requires 2 different supply voltages to: |
| A. | Keep load transistor in cutoff region |
| B. | Keep load transistor in linear region |
| C. | Keep load transistor in saturation region |
| D. | None of the mentioned |
| Answer» C. Keep load transistor in saturation region | |
| 11. |
The depletion mode n-MOS as an active load is better than enhancement load n-MOS in: |
| A. | Sharp VTC transition and better noise margins |
| B. | Single power supply |
| C. | Smaller overall layout area |
| D. | All of the mentioned |
| Answer» E. | |
| 12. |
The average power dissipated in resistive load n-MOS inverter is: |
| A. | 0 |
| B. | VDD (VDD-VOL)/R |
| C. | VDD (VDD-VOL)/2R |
| D. | VDD (VDD-VIH)/2R |
| Answer» D. VDD (VDD-VIH)/2R | |
| 13. |
What will be the effect on output voltage if the positions of n-MOS and p-MOS in CMOS inverter circuit are exchanged? |
| A. | Output is same |
| B. | Output is reversed |
| C. | Output is always high |
| D. | Output is always low |
| Answer» C. Output is always high | |
| 14. |
If the n-MOS and p-MOS of the CMOS inverters are interchanged the output is measured at: |
| A. | Source of the both transistor |
| B. | Drains of the both transistor |
| C. | Drain of n-MOS and source of p-MOS |
| D. | Source of n-MOS and drain of p-MOS |
| Answer» B. Drains of the both transistor | |
| 15. |
The n-MOS invertor consists of n-MOS transistor as driven and |
| A. | Resistor as a load |
| B. | Depletion mode n-MOS as a load |
| C. | Enhancement mode n-MOS as a load |
| D. | Any of the mentioned |
| Answer» E. | |
| 16. |
The n-MOS invertor is better than BJT in terms of: |
| A. | Fast switching time |
| B. | Low power loss |
| C. | Smaller overall layout area |
| D. | All the the mentioned |
| Answer» E. | |