MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The transit time can be given as |
| A. | 2d |
| B. | 2d/µE |
| C. | µE/d |
| D. | µE/2d |
| Answer» C. µE/d | |
| 2. |
Drift velocity can be given as |
| A. | E/µ |
| B. | µ/E |
| C. | µ * E |
| D. | E |
| Answer» D. E | |
| 3. |
L depends on |
| A. | substrate concentration |
| B. | Vgs |
| C. | Vt |
| D. | Vds |
| Answer» B. Vgs | |
| 4. |
What is the minimum value of L to maintain transistor action? |
| A. | d |
| B. | d/2 |
| C. | 2d |
| D. | d2 |
| Answer» D. d2 | |
| 5. |
The size of a transistor is usually defined in terms of its |
| A. | channel length |
| B. | feature size |
| C. | width |
| D. | thickness ‘d’ |
| Answer» B. feature size | |
| 6. |
Maximum electric field can be given as |
| A. | V/d |
| B. | d/V |
| C. | 2V/d |
| D. | d/2V |
| Answer» D. d/2V | |
| 7. |
If doping level of substrate Nb increases then depletion width |
| A. | increases |
| B. | decreases |
| C. | does not change |
| D. | increases and then decreases |
| Answer» C. does not change | |
| 8. |
Vdd is scaled by |
| A. | α |
| B. | β |
| C. | 1/α |
| D. | 1/β |
| Answer» E. | |
| 9. |
As the channel length is reduced in a MOS transistor, depletion region width must be |
| A. | increased |
| B. | decreased |
| C. | must not vary |
| D. | exponentially decreased |
| Answer» C. must not vary | |
| 10. |
Built-in junction potential Vb depends on |
| A. | Vdd |
| B. | Vgs |
| C. | substrate doping level |
| D. | oxide thickness |
| Answer» D. oxide thickness | |