Explore topic-wise MCQs in Vlsi.

This section includes 28 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.

1.

MOSFET is used as ___________

A. current source
B. voltage source
C. buffer
D. divider
Answer» B. voltage source
Discussion
2.

When the threshold voltage is more, leakage current will be?

A. more
B. less
C. all of the mentioned
D. none of the mentioned
Answer» C. all of the mentioned
Discussion
3.

When the channel pinches off?

A. Vgs > Vds
B. Vds > Vgs
C. Vds > (Vgs-Vth)
D. Vgs > (Vds-Vth)
Answer» D. Vgs > (Vds-Vth)
Discussion
4.

In linear region ______ channel exists.

A. uniform
B. non-uniform
C. wide
D. uniform and wide
Answer» B. non-uniform
Discussion
5.

The current Ids _______ as Vds increases.

A. increases
B. decreases
C. remains fairly constant
D. exponentially increases
Answer» D. exponentially increases
Discussion
6.

Threshold voltage is negative for __________

A. nMOS depletion
B. nMOS enhancement
C. pMOS depletion
D. pMOS enhancement
Answer» B. nMOS enhancement
Discussion
7.

What is the condition for saturation?

A. Vgs = Vds
B. Vds = Vgs – Vt
C. Vgs = Vds – Vt
D. Vds > Vgs – Vt
Answer» C. Vgs = Vds – Vt
Discussion
8.

In resistive region __________

A. Vds greater than (Vgs – Vt)
B. Vds lesser than (Vgs – Vt)
C. Vgs greater than (Vds – Vt)
D. Vgs lesser than (Vds – Vt)
Answer» C. Vgs greater than (Vds – Vt)
Discussion
9.

What is the mobility of proton or hole at room temperature?

A. 650 cm2/V sec
B. 260 cm2/V sec
C. 240 cm2/V sec
D. 500 cm2/V sec
Answer» D. 500 cm2/V sec
Discussion
10.

Eds is given by __________

A. Vds / L
B. L / Vds
C. Vds x L
D. Vdd / L
Answer» B. L / Vds
Discussion
11.

Velocity can be given as __________

A. µ / Vds
B. µ / Eds
C. µ x Eds
D. Eds / µ
Answer» C. µ x Eds
Discussion
12.

Transit time can be given by __________

A. L / v
B. v / L
C. v x L
D. v x d
Answer» B. v / L
Discussion
13.

Ids can be given by __________

A. Qc x Ʈ
B. Qc / Ʈ
C. Ʈ / Qc
D. Qc / 2Ʈ
Answer» C. Ʈ / Qc
Discussion
14.

Ids depends on ___________

A. Vg
B. Vds
C. Vdd
D. Vss
Answer» C. Vdd
Discussion
15.

THE_CURRENT_IDS_________AS_VDS_INCREASES?$

A. increases
B. decreases
C. remains fairly constant
D. exponentially increases
Answer» D. exponentially increases
Discussion
16.

When the channel pinches off?$

A. Vgs>Vds
B. Vds>Vgs
C. Vds>(Vgs-Vth)
D. Vgs>(Vds-Vth)
Answer» D. Vgs>(Vds-Vth)
Discussion
17.

In linear region, ______ channel exists$

A. uniform
B. non-uniform
C. wide
D. uniform and wide
Answer» B. non-uniform
Discussion
18.

MOSFET is used as

A. current source
B. voltage source
C. buffer
D. divider
Answer» B. voltage source
Discussion
19.

When threshold voltage is more, leakage current will be

A. more
B. less
C. all of the mentioned
D. none of the mentioned
Answer» C. all of the mentioned
Discussion
20.

Threshold voltage is negative fo?

A. nMOS depletion
B. nMOS enhancement
C. pMOS depletion
D. pMOS enhancement
Answer» B. nMOS enhancement
Discussion
21.

The condition for saturation is

A. Vgs = Vds
B. Vds = Vgs – Vt
C. Vgs = Vds – Vt
D. Vds greater than Vgs – Vt
Answer» C. Vgs = Vds ‚Äö√Ñ√∂‚àö√ë‚àö¬® Vt
Discussion
22.

In resistive region

A. Vds greater than (Vgs – Vt)
B. Vds lesser than (Vgs – Vt)
C. Vgs greater than (Vds – Vt)
D. Vgs lesser than (Vds – Vt)
Answer» C. Vgs greater than (Vds ‚Äö√Ñ√∂‚àö√ë‚àö¬® Vt)
Discussion
23.

Mobility of proton or hole at room temperature is

A. 650 cm2/V sec
B. 260 cm2/V sec
C. 240 cm2/V sec
D. 500 cm2/V sec
Answer» D. 500 cm2/V sec
Discussion
24.

Eds is given by

A. Vds / L
B. L / Vds
C. Vds x L
D. Vdd / L
Answer» B. L / Vds
Discussion
25.

Velocity can be given as

A. µ / Vds
B. µ / Eds
C. µ x Eds
D. Eds / µ
Answer» C. ¬¨¬®¬¨¬µ x Eds
Discussion
26.

Transit time can be given by

A. L / v
B. v / L
C. v x L
D. v x d
Answer» B. v / L
Discussion
27.

Ids can be given by

A. Qc x Ʈ
B. Qc / Ʈ
C. Ʈ / Qc
D. Qc / 2Ʈ
Answer» C. ‚Äö√†√ú‚àö√ú / Qc
Discussion
28.

Ids depends on

A. Vg
B. Vds
C. Vdd
D. Vss
Answer» C. Vdd
Discussion