MCQOPTIONS
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MCQOPTIONS
This section includes 17 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Gallium arsenide is a |
| A. | binary semiconductor |
| B. | trinary semiconductor |
| C. | ternary semiconductor |
| D. | unary semiconductor |
| Answer» B. trinary semiconductor | |
| 2. |
Gallium has ______ valence electrons. |
| A. | two |
| B. | three |
| C. | four |
| D. | five |
| Answer» C. four | |
| 3. |
Gallium arsenide is made up of |
| A. | single element |
| B. | compound of two elements |
| C. | compound of three elements |
| D. | compound of four elements |
| Answer» C. compound of three elements | |
| 4. |
The first process involved in the production of arsenic is |
| A. | reduction |
| B. | oxidation |
| C. | combination |
| D. | diffusion |
| Answer» C. combination | |
| 5. |
Gallium arsenide has _______ electron mobility. |
| A. | high speed |
| B. | low speed |
| C. | smaller |
| D. | larger |
| Answer» B. low speed | |
| 6. |
GALLIUM_ARSENIDE_IS_MADE_UP_OF?$ |
| A. | single element |
| B. | compound of two elements |
| C. | compound of three elements |
| D. | compound of four elements |
| Answer» C. compound of three elements | |
| 7. |
Gallium arsenide is a$ |
| A. | binary semiconductor |
| B. | trinary semiconductor |
| C. | ternary semiconductor |
| D. | unary semiconductor |
| Answer» B. trinary semiconductor | |
| 8. |
Gallium has ______ valence electrons$ |
| A. | two |
| B. | three |
| C. | four |
| D. | five |
| Answer» C. four | |
| 9. |
Which are more stronger? |
| A. | outer orbit electrons |
| B. | outer orbit protons |
| C. | inner orbit electrons |
| D. | inner orbit protons |
| Answer» B. outer orbit protons | |
| 10. |
The energy is greater as closer the electron is to the nucleus. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 11. |
Energy level of electrons are dictated by |
| A. | electron’s charges |
| B. | electron’s momentum |
| C. | electron’s mass |
| D. | electron’s weight |
| Answer» C. electron‚Äö√Ñ√∂‚àö√ë‚àö¬•s mass | |
| 12. |
Gallium has a |
| A. | positively charged nucleus +31 |
| B. | positively charged nucleus +33 |
| C. | negatively charged nucleus -31 |
| D. | negatively charged nucleus -33 |
| Answer» B. positively charged nucleus +33 | |
| 13. |
The first process involved in production of arsenic is |
| A. | reduction |
| B. | oxidation |
| C. | combination |
| D. | diffusion |
| Answer» C. combination | |
| 14. |
Arsenic is produced from |
| A. | AsS3 |
| B. | As2S3 |
| C. | As2S |
| D. | As2S3 or As2S4 |
| Answer» E. | |
| 15. |
Gallium is produced as a byproduct of |
| A. | aluminium production process |
| B. | sulphur production process |
| C. | nitrogen production process |
| D. | oxygen production process |
| Answer» B. sulphur production process | |
| 16. |
Which technology has semi-insulating substrate? |
| A. | silicon |
| B. | silicon nitride |
| C. | gallium oxide |
| D. | gallium arsenide |
| Answer» E. | |
| 17. |
Gallium arsenide has _______ electron mobility |
| A. | high speed |
| B. | low speed |
| C. | smaller |
| D. | larger |
| Answer» B. low speed | |