 
			 
			MCQOPTIONS
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				This section includes 19 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. | Which allows random access to read? | 
| A. | NOR type flash | 
| B. | NAND type flash | 
| C. | all of the mentioned | 
| D. | none of the mentioned | 
| Answer» B. NAND type flash | |
| 2. | NOR type flash needs error correcting code. | 
| A. | true | 
| B. | false | 
| Answer» C. | |
| 3. | The program erase cycle in flash memory is | 
| A. | finite | 
| B. | infinite | 
| C. | all of the mentioned | 
| D. | none of the mentioned | 
| Answer» B. infinite | |
| 4. | In NAND type flash, memory can be addressed bit-wise. | 
| A. | true | 
| B. | false | 
| Answer» B. false | |
| 5. | Which is a comparatively slower device? | 
| A. | ROM | 
| B. | RAM | 
| C. | flash memory | 
| D. | SRAM | 
| Answer» D. SRAM | |
| 6. | NOR type flash allows ______ to be read or written independently. | 
| A. | one machine cycle | 
| B. | one machine word | 
| C. | one machine sentence | 
| D. | one bit | 
| Answer» C. one machine sentence | |
| 7. | THE_PROGRAM_ERASE_CYCLE_IN_FLASH_MEMORY_IS?$ | 
| A. | finite | 
| B. | infinite | 
| C. | all of the mentioned | 
| D. | none of the mentioned | 
| Answer» B. infinite | |
| 8. | Which allows random access to read?$ | 
| A. | NOR type flash | 
| B. | NAND type flash | 
| C. | all of the mentioned | 
| D. | none of the mentioned | 
| Answer» B. NAND type flash | |
| 9. | NOR type flash needs error correcting code.$ | 
| A. | true | 
| B. | false | 
| Answer» C. | |
| 10. | Which has high storage capacity? | 
| A. | NOR type flash | 
| B. | NAND type flash | 
| C. | all of the mentioned | 
| D. | none of the mentioned | 
| Answer» C. all of the mentioned | |
| 11. | In NAND type flash, memory can be addressed bit-wise? | 
| A. | true | 
| B. | false | 
| Answer» B. false | |
| 12. | The transistors in NAND type flash are connected in | 
| A. | series | 
| B. | parallel | 
| C. | cascade | 
| D. | randomly | 
| Answer» B. parallel | |
| 13. | In NOR type flash memory, data is erased | 
| A. | bitwise | 
| B. | bytewise | 
| C. | blockwise | 
| D. | sentence wise | 
| Answer» D. sentence wise | |
| 14. | In NOR type flash memory, each cell has one end connected to | 
| A. | source | 
| B. | drain | 
| C. | gate | 
| D. | ground | 
| Answer» E. | |
| 15. | Floating gate transistor in flash memory has | 
| A. | two gates | 
| B. | one gate | 
| C. | two sources | 
| D. | two drains | 
| Answer» B. one gate | |
| 16. | Which is comparatively slower device? | 
| A. | ROM | 
| B. | RAM | 
| C. | flash memory | 
| D. | SRAM | 
| Answer» D. SRAM | |
| 17. | NAND type flash memories are used in | 
| A. | memory cards | 
| B. | USB | 
| C. | solid state drivers | 
| D. | all of the mentioned | 
| Answer» E. | |
| 18. | NOR type flash allows ______ to be read or written independently | 
| A. | one machine cycle | 
| B. | one machine word | 
| C. | one machine sentence | 
| D. | one bit | 
| Answer» C. one machine sentence | |
| 19. | Flash memory is a non-volatile storage device in which data | 
| A. | can be erased physically | 
| B. | can be erased magnetically | 
| C. | can be erased electrically | 
| D. | cannot be erased | 
| Answer» D. cannot be erased | |