MCQOPTIONS
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MCQOPTIONS
This section includes 79 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
Field effect transistor uses ________ to control the shape. |
| A. | electric field |
| B. | magnetic field |
| C. | current distribution |
| D. | voltage distribution |
| Answer» B. magnetic field | |
| 52. |
The scattering parameter S11 for an FET __________ with increase in the frequency of operation of the transistor. |
| A. | increases |
| B. | decreases |
| C. | remains constant |
| D. | none of the mentioned |
| Answer» C. remains constant | |
| 53. |
The upper threshold frequency of an FET, where short circuit gain is unity is given by: |
| A. | gm/2πCgs |
| B. | gm/Cgs |
| C. | gm/ 2π |
| D. | none of the mentioned |
| Answer» B. gm/Cgs | |
| 54. |
The expression for short circuit current gain of an FET is given by: |
| A. | gm/ ωCgs |
| B. | Ig/gmVc |
| C. | ωCgs/ gm |
| D. | none of the mentioned |
| Answer» B. Ig/gmVc | |
| 55. |
The S21 parameter for a MESFET is lesser than 1. |
| A. | true |
| B. | false |
| Answer» C. | |
| 56. |
GaAs MESFET –metal semiconductor field effect transistor are one of the widely used categories of FETs. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 57. |
Field effect transistors are different from BJTs in that they are _________ |
| A. | monopolar devices |
| B. | bipolar devices |
| C. | bidirectional device |
| D. | none of the mentioned |
| Answer» B. bipolar devices | |
| 58. |
WHICH_VOLTAGE_INCREASES_THE_CHANNEL_SIZE??$ |
| A. | negative Vgs |
| B. | positive Vgs |
| C. | negative Vds |
| D. | positive Vds |
| Answer» C. negative Vds | |
| 59. |
THE_UPPER_THRESHOLD_FREQUENCY_OF_AN_FET,_WHERE_SHORT_CIRCUIT_GAIN_IS_UNITY_IS_GIVEN_BY:?$ |
| A. | g<sub>m</sub>/2πC<sub>gs</sub> |
| B. | g<sub>m</sub>/C<sub>gs</sub> |
| C. | g<sub>m</sub>/ 2π |
| D. | none of the mentioned |
| Answer» B. g<sub>m</sub>/C<sub>gs</sub> | |
| 60. |
Which mode of operation of FET is used, when amplification is needed?$ |
| A. | active |
| B. | saturation |
| C. | non saturation |
| D. | linear |
| Answer» C. non saturation | |
| 61. |
The curve of IDS v/s VDS of an FET does not vary with the gate to source voltage applied.$ |
| A. | true |
| B. | false |
| Answer» C. | |
| 62. |
Which relation is correct?$ |
| A. | Vgs greater than Vds |
| B. | Vds greater than Vgs |
| C. | Vds equal to Vgs |
| D. | Vgs lesser than Vds |
| Answer» B. Vds greater than Vgs | |
| 63. |
The scattering parameter S11 for an FET __________ with increase in the frequency of operation of the transistor.$ |
| A. | increases |
| B. | decreases |
| C. | remains constant |
| D. | none of the mentioned |
| Answer» C. remains constant | |
| 64. |
The expansion of depletion region in n-channel device, makes the channe? |
| A. | narrow |
| B. | wide |
| C. | does not affect the channel |
| D. | cannot be determined |
| Answer» B. wide | |
| 65. |
The expression for short circuit current gain of an FET is given by? |
| A. | g<sub>m</sub>/ ωC<sub>gs</sub> |
| B. | I<sub>g</sub>/g<sub>m</sub>V<sub>c</sub> |
| C. | ωC<sub>gs</sub>/ g<sub>m</sub> |
| D. | none of the mentioned |
| Answer» B. I<sub>g</sub>/g<sub>m</sub>V<sub>c</sub> | |
| 66. |
Which terminal controls the electron flow passage? |
| A. | source |
| B. | drain |
| C. | gate |
| D. | base |
| Answer» D. base | |
| 67. |
The S21 parameter for a MESFET is lesser than 1. |
| A. | true |
| B. | false |
| Answer» C. | |
| 68. |
In FET, the width is greater than the length of the gate. |
| A. | true |
| B. | false |
| Answer» B. false | |
| 69. |
The frequency of operation of an FET is limited by: |
| A. | drain to source voltage |
| B. | gate to source voltage |
| C. | gate length |
| D. | effective area of an FET |
| Answer» D. effective area of an FET | |
| 70. |
Which terminal bias the transistor to operation? |
| A. | source |
| B. | drain |
| C. | gate |
| D. | base |
| Answer» E. | |
| 71. |
In MESFET, an applied signal at the gate modulates the electron carriers; this produces _______ in the FET. |
| A. | voltage amplification |
| B. | voltage attenuation |
| C. | electron multiplication |
| D. | electron recombination |
| Answer» B. voltage attenuation | |
| 72. |
In FET, the current enters the channel through |
| A. | source |
| B. | drain |
| C. | gate |
| D. | nodes |
| Answer» B. drain | |
| 73. |
Advantage of using GaAs in MESFET as compared to use of silicon is: |
| A. | GaAs are cost effective |
| B. | they have higher mobility |
| C. | they have high resistance for flow of current in the reverse direction |
| D. | none of the mentioned |
| Answer» C. they have high resistance for flow of current in the reverse direction | |
| 74. |
Field effect transistor’s conductivity is regulated by$ |
| A. | input current |
| B. | output current |
| C. | terminal voltage |
| D. | supply voltage |
| Answer» D. supply voltage | |
| 75. |
At frequencies above 10GHz, MESFET are not suitable for microwave applications due to parasitic effects. |
| A. | true |
| B. | false |
| Answer» C. | |
| 76. |
The FET has _____ input impedance |
| A. | low |
| B. | high |
| Answer» C. | |
| 77. |
GaAs MESFET –metal semiconductor field effect transistor are one of the widely used categories of FETs.$ |
| A. | true |
| B. | false |
| Answer» B. false | |
| 78. |
Field effect transistors are known as |
| A. | unipolar device |
| B. | bipolar device |
| C. | tripolar device |
| D. | multipolar device |
| Answer» B. bipolar device | |
| 79. |
Field effect transistor uses ______ to control the shape |
| A. | electric field |
| B. | magnetic field |
| C. | current distribution |
| D. | voltage distribution |
| Answer» B. magnetic field | |