MCQOPTIONS
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MCQOPTIONS
This section includes 130 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
Three identical amplifiers with each one having a voltage gain of 50,input resistance of 1KΩ & output resistance of 250, are cascaded. The open circuit voltage gain of combined amplifier is |
| A. | 49dB |
| B. | 51dB |
| C. | 98dB |
| D. | 102dB |
| Answer» D. 102dB | |
| 52. |
A differential amplifier is invariably used in the i/p stage of all OP-amps.This is dome basically to provide the OP-amps with a very high |
| A. | CMRR |
| B. | Bandwidth |
| C. | Slew rate |
| D. | Open-loop gain |
| Answer» B. Bandwidth | |
| 53. |
The MOSFET switch in its onstate may be considered equivalent to |
| A. | Resistor |
| B. | Inductor |
| C. | Capacitor |
| D. | Battery |
| Answer» D. Battery | |
| 54. |
Introducing a resistor in the emitter of a common amplifier stabilizes the dc operating point against variations in |
| A. | Only the temperature |
| B. | only the β of the transistor |
| C. | Both Temperature & β |
| D. | None of the above |
| Answer» D. None of the above | |
| 55. |
Voltage Series (feedback also called series-shunt feedback) results in |
| A. | Increase in both input & output impedances |
| B. | Decreases in both input & output impedances |
| C. | Increase in input impedance & decreases in output impedance |
| D. | Decrease in input impedance & increase in output impedance |
| Answer» D. Decrease in input impedance & increase in output impedance | |
| 56. |
An amplifier using an opamp with slew rate SR=1v/µsec has a gain of 40db.if this amplifier has to faithfully amplify sinusoidal signals from dc to 20 KHz without introducing any slew-rate induced distortion, then the input signal level must not exceed |
| A. | 795mV |
| B. | 395mV |
| C. | 795 mV |
| D. | 39.5mV |
| Answer» D. 39.5mV | |
| 57. |
In a common emitter, unbypassed resister provides |
| A. | voltage shunt feedback |
| B. | current series feedback |
| C. | negative voltage feedback |
| D. | positive current feedback |
| Answer» D. positive current feedback | |
| 58. |
An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is |
| A. | 0.25 |
| B. | 0.5 |
| C. | 0.75 |
| D. | 1 |
| Answer» C. 0.75 | |
| 59. |
An amplifier without feedback has a voltage gain of 50,input resistance os 1 KΩ & Output resistance of 2.5KΩ.The input resistance of the current shunt negative feedback amplifier using the above amplifier with a feedbacik factor of 0.2 is |
| A. | 1/11KΩ |
| B. | 1/5KΩ |
| C. | 5KΩ |
| D. | 11KΩ |
| Answer» B. 1/5KΩ | |
| 60. |
Negative feedback in an amplifier |
| A. | Reduces gain |
| B. | Increase frequency &phase distortion |
| C. | Reduces bandwidth |
| D. | Increases noise |
| Answer» B. Increase frequency &phase distortion | |
| 61. |
An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are |
| A. | fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz |
| B. | fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz |
| C. | fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz |
| D. | fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz |
| Answer» C. fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz | |
| 62. |
A constant current signal across a parallel RLC circuits gives an o/p of 1.4v at the signal frequency of 3.89KHZ and 4.1KHZ. At the frequency of 4KHZ,the o/p voltage will be |
| A. | 1v |
| B. | 2v |
| C. | 1.4v |
| D. | 2.8v |
| Answer» C. 1.4v | |
| 63. |
If=0.98, Ico=6µA and Iβ=100µA for a transistor,then the value of Ic will be |
| A. | 2.3mA |
| B. | 3.2mA |
| C. | 4.6mA |
| D. | 5.2mA |
| Answer» E. | |
| 64. |
In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at |
| A. | The edge of the depletion region on the p-side |
| B. | The edge of the depletion region on the n-side |
| C. | The p⁺n junction |
| D. | The center of the depletion region on the n-side |
| Answer» D. The center of the depletion region on the n-side | |
| 65. |
What is the voltage source for a circuit carrying 2 A of current through a 36 Ω resistor? |
| A. | 1.8 V |
| B. | 18 V |
| C. | 7.2 V |
| D. | 72 V |
| Answer» E. | |
| 66. |
When 12 V are applied across a 68 Ω resistor, the current is |
| A. | 816 mA |
| B. | 17.6 mA |
| C. | 176 mA |
| D. | 8.16 mA |
| Answer» D. 8.16 mA | |
| 67. |
When there is 12 mA of current through a 1.2 kΩ resistor, the voltage across the resistor is |
| A. | 14.4 V |
| B. | 1.4 V |
| C. | 100 V |
| D. | 10 V |
| Answer» B. 1.4 V | |
| 68. |
A current of 200 µA through a 6.8 kΩ resistor produces a voltage drop of |
| A. | 34.4 V |
| B. | 340 V |
| C. | 13.6 V |
| D. | 1.36 V |
| Answer» E. | |
| 69. |
How much voltage is needed to produce 2.5 A of current through a 200 Ω resistor? |
| A. | 50 V |
| B. | 500 V |
| C. | 80 V |
| D. | 8 V |
| Answer» C. 80 V | |
| 70. |
A resistance of 3.3 MO is connected across a 500 V source. The resulting current is approximately |
| A. | 15.1 µA |
| B. | 151 µA |
| C. | 66 mA |
| D. | 660 mA |
| Answer» C. 66 mA | |
| 71. |
Approximately how much current flows through a 3.3 MO resistor across a 30 V source? |
| A. | 9 µA |
| B. | 90 µA |
| C. | 900 µA |
| D. | 9000 µA |
| Answer» B. 90 µA | |
| 72. |
According to Ohm's Law |
| A. | V is directly proportional to I |
| B. | V is inversely proportional to I |
| C. | V is directly proportional to vI |
| D. | All of the above |
| Answer» B. V is inversely proportional to I | |
| 73. |
If 750 µA is flowing through 11 kΩ of resistance, what is the voltage drop across the resistor? |
| A. | 8.25 V |
| B. | 82.5 V |
| C. | 14.6 V |
| D. | 146 V |
| Answer» B. 82.5 V | |
| 74. |
Approximately how many milli-amperes of current flow through a circuit with a 40 V source and 6.8 kΩ of resistance? |
| A. | 27.2 mA |
| B. | 59 mA |
| C. | 5.9 mA |
| D. | 590 mA |
| Answer» D. 590 mA | |
| 75. |
Four amperes of current are measured through a 24 Ω resistor connected across a voltage source. How much voltage does the source produce? |
| A. | 960 V |
| B. | 9.6 V |
| C. | 96 V |
| D. | 8 V |
| Answer» D. 8 V | |
| 76. |
How much current is produced by a voltage of 18 kV across a 15 kΩ resistance? |
| A. | 1.2 A |
| B. | 12 A |
| C. | 120 mA |
| D. | 12 mA |
| Answer» B. 12 A | |
| 77. |
The quantity 43 × 10-3 is the same as |
| A. | 0.043 |
| B. | 0.430 |
| C. | 430 |
| D. | 43,000 |
| Answer» B. 0.430 | |
| 78. |
The number 0.0003 multiplied by 10-3 is |
| A. | 0.0000003 |
| B. | 0.0003 |
| C. | 3 |
| D. | 3,000 |
| Answer» B. 0.0003 | |
| 79. |
The number 4.38 × 10–3 expressed as a number having a power of 10–6 is |
| A. | 4,380 × 10–6 |
| B. | 438 × 10–6 |
| C. | 43,800 × 10–6 |
| D. | 438,000 × 10–6 |
| Answer» B. 438 × 10–6 | |
| 80. |
What is (79 × 106)/(12 × 10-8)? |
| A. | 6,580 × 1012 |
| B. | 658 × 1010 |
| C. | 6.58 × 1014 |
| D. | 0.658 × 1016 |
| Answer» D. 0.658 × 1016 | |
| 81. |
The quantity 3.3 × 103 is the same as |
| A. | 330 |
| B. | 3,300 |
| C. | 33,000 |
| D. | 0.0033 |
| Answer» C. 33,000 | |
| 82. |
The number 3.2 × 10–5 A expressed using a metric prefix is |
| A. | 32 µA |
| B. | 3.3 µA |
| C. | 320 mA |
| D. | 3,200 mA |
| Answer» B. 3.3 µA | |
| 83. |
When these numbers are added, (87 × 105) + (2.5 × 106), the result is |
| A. | 1.12 × 104 |
| B. | 11.2 × 105 |
| C. | 112 × 105 |
| D. | 1,120 × 106 |
| Answer» D. 1,120 × 106 | |
| 84. |
The number 4.4 × 106 ohms expressed using a metric prefix is |
| A. | 4 k |
| B. | 4.4 k |
| C. | 4 M |
| D. | 4.4 M |
| Answer» E. | |
| 85. |
When these numbers are multiplied, (6 × 103) (5 × 105), the result is |
| A. | 3 × 108 |
| B. | 30 × 108 |
| C. | 300 × 109 |
| D. | 3,000 × 107 |
| Answer» C. 300 × 109 | |
| 86. |
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction%! |
| A. | should not exceed half the breakdown voltage |
| B. | should not exceed the breakdown voltage |
| C. | should not exceed one third the breakdown voltage |
| D. | may be equal to or less than breakdown voltage |
| Answer» D. may be equal to or less than breakdown voltage | |
| 87. |
In monolithic ICs, all the components are fabricated by%! |
| A. | Diffusion process |
| B. | Oxidation |
| C. | Evaporation |
| D. | None |
| Answer» B. Oxidation | |
| 88. |
Fermi level is the amount of energy in which%! |
| A. | A hole can have at room temperature |
| B. | An electron can have at room temperature |
| C. | Must be given to an electron move to conduction band |
| D. | None of the above |
| Answer» D. None of the above | |
| 89. |
Free electrons exist in%! |
| A. | First band |
| B. | Second band |
| C. | Third band |
| D. | Conduction band |
| Answer» E. | |
| 90. |
The output, V-I characteristics of an Enhancement type MOSFET has%! |
| A. | Only an ohmic region |
| B. | Only a saturation region |
| C. | An ohmic region at low voltage value followed by a saturation region at higher voltages |
| D. | An ohmic region at large voltage values preceded by a saturation region at lower voltages |
| Answer» D. An ohmic region at large voltage values preceded by a saturation region at lower voltages | |
| 91. |
Which variety of copper has the best conductivity?%! |
| A. | Pure annealed copper |
| B. | Hard drawn copper |
| C. | Induction hardened copper |
| D. | Copper containing traces of silicon |
| Answer» B. Hard drawn copper | |
| 92. |
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.%! |
| A. | True |
| B. | False |
| Answer» C. | |
| 93. |
When avalanche breakdown occurs covalent bonds are not affected.%! |
| A. | True |
| B. | False |
| Answer» C. | |
| 94. |
In a bipolar transistor, the base collector junction has%! |
| A. | Forward bias |
| B. | Reverse bias |
| C. | Zero bias |
| D. | Zero or forward bias |
| Answer» C. Zero bias | |
| 95. |
Silicon is not suitable for fabrication of light emitting diodes because it is%! |
| A. | An indirect band gap semiconductor |
| B. | Direct band gap semiconductor |
| C. | Wideband gap semiconductor |
| D. | Narrowband gap semiconductor |
| Answer» B. Direct band gap semiconductor | |
| 96. |
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.%! |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 97. |
Power diodes are generally%! |
| A. | Silicon diodes |
| B. | Germanium diodes |
| C. | Either of the above |
| D. | None of the above |
| Answer» B. Germanium diodes | |
| 98. |
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is%! |
| A. | 100 |
| B. | 99 |
| C. | 1.01 |
| D. | 0.99 |
| Answer» B. 99 | |
| 99. |
*/*_Each cell of a static Random Access memory contains? |
| A. | 6 MOS transistor |
| B. | 4 MOS transistor, 2 capacitor |
| C. | 2 MOS transistor, 4 capacitor |
| D. | 1 MOS transistor and 1 capacitor |
| Answer» B. 4 MOS transistor, 2 capacitor | |
| 100. |
*/*_At room temperature the current in an intrinsic semiconductor is due to? |
| A. | Holes |
| B. | Electrons |
| C. | Ions |
| D. | Holes and electrons |
| Answer» E. | |