MCQOPTIONS
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MCQOPTIONS
This section includes 113 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
What is the “power factor”? |
| A. | ratio of true power to apparent power |
| B. | peak power times 0.707 |
| C. | sin of the phase difference between E and I |
| D. | cos of the phase angle between true power and apparent power |
| Answer» B. peak power times 0.707 | |
| 2. |
Which of the following is one of the functions performed by a diode? |
| A. | filter |
| B. | amplifier |
| C. | rectifier |
| D. | inverter |
| Answer» D. inverter | |
| 3. |
One coulomb-per-second is equal to one: |
| A. | watt |
| B. | joule |
| C. | volt |
| D. | ampere |
| Answer» E. | |
| 4. |
An ideal diode should have |
| A. | Zero resistance in the forward bias as well as reverse bias |
| B. | Zero resistance in the forward bias and an infinitely large resistance in reverse bias |
| C. | Infinitely large resistance in reverse bias |
| D. | Infinitely large resistance in forward as well as reverse bias |
| Answer» C. Infinitely large resistance in reverse bias | |
| 5. |
An ideal power supply is characterized by |
| A. | Very large output resistance |
| B. | Very small output resistance |
| C. | Zero internal resistance |
| D. | Infinite internal resistance |
| Answer» D. Infinite internal resistance | |
| 6. |
A series capacitance used in a filter circuit represents |
| A. | Low-Pass |
| B. | Band-Pass |
| C. | High-Pass |
| D. | None |
| Answer» D. None | |
| 7. |
To increase the input resistance and decrease the output resistance in negative feedback, the type used is |
| A. | Voltage Shunt |
| B. | Current Series |
| C. | Voltage Series |
| D. | Current Shunt |
| Answer» D. Current Shunt | |
| 8. |
In Bipolar Junction transistors, the type of configuration which will give both voltage gain and current gain is |
| A. | CC |
| B. | CB |
| C. | CE |
| D. | None |
| Answer» D. None | |
| 9. |
FET is a good signal chopper because |
| A. | It exhibits no offset voltage at zero drain current |
| B. | It occupies less space in integrated form |
| C. | It is less noisy |
| D. | It has got high input impedance |
| Answer» B. It occupies less space in integrated form | |
| 10. |
To prepare a P type semiconducting material the impurities to be added to silicon are |
| A. | Boron, Gallium |
| B. | Arsenic, Antimony |
| C. | Gallium, Phosphorous |
| D. | Gallium, Arsenic |
| Answer» B. Arsenic, Antimony | |
| 11. |
Semi-conductor diode time constant is equal to |
| A. | The value of majority carrier life time |
| B. | The life time of minority carrier |
| C. | The diffusion capacitance time constant |
| D. | Zero |
| Answer» B. The life time of minority carrier | |
| 12. |
An emitter follows has |
| A. | High input impedance and high output impedance. |
| B. | High input impedance and low output impedance |
| C. | Low input impedance and high output impedance |
| D. | Low input impedance and low output impedance. |
| Answer» B. High input impedance and low output impedance | |
| 13. |
An amplifier has a gain of 10,000 expressed in decibels the gain is |
| A. | 10 |
| B. | 40 |
| C. | 80 |
| D. | 100 |
| Answer» E. | |
| 14. |
An SCR is a device having |
| A. | Three layers with four junctions |
| B. | Three layers with two junctions |
| C. | Four layers with three junctions |
| D. | Two layers with three junctions |
| Answer» D. Two layers with three junctions | |
| 15. |
A Zener diode is used for |
| A. | Voltage Regulation |
| B. | Rectification |
| C. | Noise Suppression |
| D. | Blocking A.C |
| Answer» B. Rectification | |
| 16. |
A dc power supply has no-load voltage of 30V and a full-load voltage of 25V at full-load current of 1A. Its output resistance and load regulation respectively are |
| A. | 5Ω & 20% |
| B. | 25Ω & 20% |
| C. | 5Ω &16.7% |
| D. | 25Ω & 16.7% |
| Answer» C. 5Ω &16.7% | |
| 17. |
Negative feedback in an amplifier |
| A. | Reduces gain |
| B. | Increase frequency and phase distortion |
| C. | Reduces bandwidth |
| D. | Increase Noise |
| Answer» B. Increase frequency and phase distortion | |
| 18. |
Most of the linear ICs are based on the two-transistor differential amplifier because of its |
| A. | Input voltage dependent linear transfer characteristics |
| B. | High voltage gain |
| C. | High input resistance |
| D. | High CMMR |
| Answer» E. | |
| 19. |
The bandwidth of an RF tuned amplifier is dependent on |
| A. | Q-factor of the tuned O/P circuit |
| B. | Q-factor of the tuned I/P circuit |
| C. | Quiescent operating point |
| D. | Q-factor of the O/P and I/P circuits as well as quiescent operating point |
| Answer» B. Q-factor of the tuned I/P circuit | |
| 20. |
Class AB operation is often used in power (large signal) amplifiers in order to |
| A. | Get maximum effeciency |
| B. | Remove even harmonics |
| C. | Overcome a crossover distortion |
| D. | Reducing collector dissipation |
| Answer» D. Reducing collector dissipation | |
| 21. |
A constant current signal across a parallel RLC circuits gives an o/p of 1.4V at the signal frequency of 3.89kHz. At the frequency of 4 kHz, the o/p voltage will be |
| A. | 1 V |
| B. | 2 V |
| C. | 1.4 V |
| D. | 2.8 V |
| Answer» C. 1.4 V | |
| 22. |
In a common emitter, unbypassed resistor provides |
| A. | Voltage shut feedback |
| B. | Current series feedback |
| C. | Negative voltage feedback |
| D. | Positive current feedback |
| Answer» D. Positive current feedback | |
| 23. |
Generally, the gain of a transistor amplifier falls at high frequencies due to the |
| A. | Internal Capacitance of the device |
| B. | Coupling capacitor at the input |
| C. | Skin effect |
| D. | Coupling capacitor at the output |
| Answer» B. Coupling capacitor at the input | |
| 24. |
A change in the value of the emitter resistance Re in a differential amplifier |
| A. | Affects the difference mode gain Ad |
| B. | Affects the common mode gain Ac |
| C. | Affects both Ad and Ac |
| D. | Does not effect either Ad and Ac |
| Answer» C. Affects both Ad and Ac | |
| 25. |
The action of JFET in its equivalent circuit can be represented as a |
| A. | Current controlled Current source |
| B. | Current controlled Voltage source |
| C. | Voltage controlled Voltage source |
| D. | Voltage controlled Current source |
| Answer» E. | |
| 26. |
Negative feedback in amplifiers |
| A. | Improves the signal to noise ratio at the input |
| B. | Improves the signal to noise ratio at the output |
| C. | Does not affect the signal to noise ratio at the output |
| D. | Does not affect the signal to noise ratio at the input |
| Answer» C. Does not affect the signal to noise ratio at the output | |
| 27. |
Cut off frequency of a bipolar transistor ____ |
| A. | Increase with the increase in base width |
| B. | Increase with the increase in emitter width |
| C. | Increase with the increase in the collector width |
| D. | Increase with the decrease in the base width |
| Answer» E. | |
| 28. |
To obtain very high input & output impedances in a feedback amplifier, the topology used is |
| A. | Voltage-Series |
| B. | Current-Series |
| C. | Voltage-Shunt |
| D. | Current-Shunt |
| Answer» D. Current-Shunt | |
| 29. |
A Zener diode works on the principle of ______ |
| A. | Tunneling of charge carriers across the junction |
| B. | Thermionic emission |
| C. | Diffusion of charge carriers across the junction |
| D. | Hopping of charge carriers across the junction |
| Answer» B. Thermionic emission | |
| 30. |
A MOS capacitor made using P-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of |
| A. | Holes |
| B. | Electrons |
| C. | Positively charged ions |
| D. | Negatively charged ions |
| Answer» C. Positively charged ions | |
| 31. |
The impurity commonly used for realizing the base region of a silicon NPN transistor is ______ |
| A. | Gallium |
| B. | Indium |
| C. | Boron |
| D. | Phosphorus |
| Answer» D. Phosphorus | |
| 32. |
When a junction is formed between a metal and a semiconductor, the depletion layer is |
| A. | More on the side of the metal |
| B. | Equal on both sides |
| C. | Less on the side of the metal |
| D. | Less on semiconductor side |
| Answer» D. Less on semiconductor side | |
| 33. |
For an ideal noise free amplifier, the noise figure is |
| A. | Zero |
| B. | Zero dB |
| C. | Infinity |
| D. | 1 dB |
| Answer» C. Infinity | |
| 34. |
In a saturated transistor |
| A. | B-E junction is forward biased with C-B junction is reverse biased |
| B. | Both the junctions are forward biased |
| C. | B-E junction is reverse biased with C-B junction is forward biased |
| D. | Both the junctions are reverse biased |
| Answer» C. B-E junction is reverse biased with C-B junction is forward biased | |
| 35. |
In a voltage series feedback |
| A. | Output resistance increases while input resistance decreases |
| B. | Output and input resistances are reduced |
| C. | Output and input resistances are increased |
| D. | Output resistance decreases while input resistance increases |
| Answer» C. Output and input resistances are increased | |
| 36. |
H-parameters of a transistor |
| A. | Are constant |
| B. | Vary with temperature |
| C. | Are dependent upon collector current |
| D. | None of these |
| Answer» D. None of these | |
| 37. |
In FET amplifiers, input is Incorrect! |
| A. | A current signal |
| B. | A voltage signal |
| C. | Either a current or voltage signal |
| D. | None of these |
| Answer» C. Either a current or voltage signal | |
| 38. |
Zener diodes semiconductors are |
| A. | Lightly Doped |
| B. | Heavily Doped |
| C. | Medium Doped |
| D. | Not at all Doped |
| Answer» C. Medium Doped | |
| 39. |
For harmonic generation the amplifier used is |
| A. | Audio Amplifier |
| B. | Class-A Amplifier |
| C. | RC Amplifier |
| D. | class-C Turned Amplifier |
| Answer» E. | |
| 40. |
Which one of the following conditions for Z parameters would hold for a two port network containing linear bilateral passive circuit elements? |
| A. | Z11 = Z22 |
| B. | Z12Z21 = Z11Z22 |
| C. | Z11Z12 = Z22Z21 |
| D. | Z12 = Z21 |
| Answer» E. | |
| 41. |
A transistor has CE parameter as hie = 10kW, hre=20 x 10-4 , hse = 100, hoe = 25 ms. The hib for this transistor will be |
| A. | 100 W |
| B. | 99.01 W |
| C. | 5m W |
| D. | 101kW |
| Answer» C. 5m W | |
| 42. |
When an RC driving point impedance function has zeros at s= -2 and s=-5 then the admissible poles for the function would be? |
| A. | s = 0; s = -6 |
| B. | s = 0; s = -3 |
| C. | s = 0; s = -1 |
| D. | s = -3; s = -4 |
| Answer» C. s = 0; s = -1 | |
| 43. |
When a sample of germanium and silicon having same impurity density are kept at room temperature then? |
| A. | Both will have equal value of resistivity |
| B. | Both will have equal value negative resistivity |
| C. | Resistivity of germanium will be higher than that of silicon |
| D. | Resistivity of silicon will be higher than that of germanium |
| Answer» E. | |
| 44. |
When a piece of copper and another of germanium are cooled from room temperature to 800 K then the resistance of - |
| A. | Each of them increases |
| B. | Each of them decreases |
| C. | Copper increases and germanium decreases |
| D. | Copper decreases and germanium increases |
| Answer» E. | |
| 45. |
Clipper circuits are used to obtain any one of the following waveforms |
| A. | Sharper |
| B. | Rectified |
| C. | Fast Rising |
| D. | Smaller Amplitude |
| Answer» E. | |
| 46. |
By passing a triangular wave through a differentiating circuit the output wave shape is |
| A. | Spikes |
| B. | Squarewave |
| C. | Sawtooth |
| D. | Sinewave |
| Answer» B. Squarewave | |
| 47. |
In an RL circuit after a very long time of application of step voltage the inductance L is represented in its equivalent circuit as Incorrect! |
| A. | Open Circuit |
| B. | Short Circuit |
| C. | L / 2 |
| D. | 2L |
| Answer» C. L / 2 | |
| 48. |
Alternatively the characteristic impedance is called |
| A. | Surge Impedance |
| B. | Match Impedance |
| C. | Alternative Impedance |
| D. | Reflected Impedance |
| Answer» B. Match Impedance | |
| 49. |
The amplifier is which current is proportional to the signal voltage, independent of source load resistance is called |
| A. | Current Amplifier |
| B. | Voltage Amplifier |
| C. | Transresistance amplifier |
| D. | Transconductance amplifier |
| Answer» D. Transconductance amplifier | |
| 50. |
TVS diode is used for |
| A. | Voltage protection |
| B. | Current protection |
| C. | ESD protection |
| D. | None of the above |
| Answer» B. Current protection | |