MCQOPTIONS
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MCQOPTIONS
This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
MOS_TRANSISTOR_STRUCTURE_IS?$ |
| A. | symmetrical |
| B. | non symmetrical |
| C. | semi symmetrical |
| D. | pseudo symmetrical |
| Answer» B. non symmetrical | |
| 2. |
Inversion layer in enhancement mode consists of excess of$ |
| A. | positive carriers |
| B. | negative carriers |
| C. | both in equal quantity |
| D. | neutral carriers |
| Answer» C. both in equal quantity | |
| 3. |
pMOS is$ |
| A. | donor doped |
| B. | acceptor doped |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» B. acceptor doped | |
| 4. |
As source drain voltage increases, channel depth |
| A. | increases |
| B. | decreases |
| C. | logarithmically increases |
| D. | exponentially increses |
| Answer» C. logarithmically increases | |
| 5. |
The condition for linear region is |
| A. | Vgs lesser than Vt |
| B. | Vgs greater than Vt |
| C. | Vds lesser than Vgs |
| D. | Vds greater than Vgs |
| Answer» C. Vds lesser than Vgs | |
| 6. |
nMOS i? |
| A. | donor doped |
| B. | acceptor doped |
| C. | all of the mentioned |
| D. | none of the mentioned |
| Answer» C. all of the mentioned | |
| 7. |
The condition for non conducting mode is |
| A. | Vds lesser than Vgs |
| B. | Vgs lesser than Vds |
| C. | Vgs = Vds = 0 |
| D. | Vgs = Vds = Vs = 0 |
| Answer» E. | |
| 8. |
In enhancement mode, device is in _________ condition |
| A. | conducting |
| B. | non conducting |
| C. | partially conducting |
| D. | insulating |
| Answer» C. partially conducting | |
| 9. |
The condition for non saturated region is |
| A. | Vds = Vgs – Vt |
| B. | Vgs lesser than Vt |
| C. | Vds lesser than Vgs – Vt |
| D. | Vds greater than Vgs – Vt |
| Answer» D. Vds greater than Vgs ‚Äö√Ñ√∂‚àö√ë‚àö¬® Vt | |
| 10. |
In depletion mode, source and drain are connected by |
| A. | insulating channel |
| B. | conducing channel |
| C. | Vdd |
| D. | Vss |
| Answer» C. Vdd | |
| 11. |
Source and drain in nMOS device are isolated by |
| A. | a single diode |
| B. | two diodes |
| C. | three diodes |
| D. | four diodes |
| Answer» C. three diodes | |
| 12. |
nMOS devices are formed in |
| A. | p-type substrate of high doping level |
| B. | n-type substrate of low doping level |
| C. | p-type substrate of moderate doping level |
| D. | n-type substrate of high doping level |
| Answer» D. n-type substrate of high doping level | |
| 13. |
Speed power product is measured as the product of |
| A. | gate switching delay and gate power dissipation |
| B. | gate switching delay and gate power absorption |
| C. | gate switching delay and net gate power |
| D. | gate power dissipation and absorption |
| Answer» B. gate switching delay and gate power absorption | |
| 14. |
Electronics are characterized by |
| A. | low cost |
| B. | low weight and volume |
| C. | reliability |
| D. | all of the mentioned |
| Answer» E. | |