MCQOPTIONS
Bookmark
Saved Bookmarks
→
Vlsi
→
Characteristics Npn Bipolar Transistors
→
The electrical equivalent component for MOS struct...
1.
The electrical equivalent component for MOS structure is:
A.
Resistor
B.
Capacitor
C.
Inductor
D.
Switch
Answer» C. Inductor
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
The expression for threshold voltage for the enhancement mode nMOSFET is:
The threshold voltage depends on:
For enhancement mode n-MOSFET, the threshold voltage is:
Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system.
THE_THRESHOLD_VOLTAGE_DEPENDS_ON:?$
The expression for threshold voltage for the enhancement mode nMOSFET is :$
For enhancement mode n-MOSFET, the threshold voltage is?
Surface inversion occurs when gate voltage is:
At threshold Voltage, the surface potential is:
When gate voltage is negative for enhancement mode n-MOS, the direction of electric field will be:
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply
Your experience on this site will be improved by allowing cookies. Read
Cookie Policy
Reject
Allow cookies