MCQOPTIONS
Bookmark
Saved Bookmarks
→
Vlsi
→
Characteristics Npn Bipolar Transistors
→
Photoresist layer is formed using
1.
Photoresist layer is formed using
A.
high sensitive polymer
B.
light sensitive polymer
C.
polysilicon
D.
silicon di oxide
Answer» C. polysilicon
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
_______ is sputtered on the whole wafer.
N-well is formed by __________
Which type of CMOS circuits are good and better?
P-well doping concentration and depth will affect the __________
Few parts of photoresist layer is removed by using __________
In CMOS fabrication, the photoresist layer is exposed to __________
Photoresist layer is formed using __________
Oxidation process is carried out using __________
P-well is created on __________
CMOS has __________
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply
Your experience on this site will be improved by allowing cookies. Read
Cookie Policy
Reject
Allow cookies