Consider the following time parameters in development of solid state d – McqOptions

MCQOPTIONS

1.	Consider the following time parameters in development of solid state devices:1. Domain growth time constant2. Transit time3. Dielectric relaxation timeIn the case of Transferred Electron Devices (TED), which of these are used?
A.	1 and 2 only
B.	2 and 3 only
C.	1 and 3 only
D.	1, 2 and 3
Answer» E.

Discussion

No Comment Found

Related MCQs

An antenna has a field pattern E (θ) =cos θ. cos 2θ. The first null beam width of the antenna is:
amplifiers are linear circuits, where the transistor is biased to conduct over the entire range of the input signal cycle.
is defined as the ratio of input signal to noise ratio to the output signal to noise ratio.
is a single cavity klystron tube that operates as on oscillator by using a reflector electrode after the cavity.
are used in the final stages of radar and radio transmitters to increase the radiated power level.
is a microwave device in which the frequency of operation is determined by the biasing field strength.
The solid area through which all the power radiated by the antenna is:
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:
To prevent an IMPATT diode from burning, a constant bias source is used to maintain at safe limit.
In a oscillator, the RF wave travels along the helix from the collector towards the electron gun.