MCQOPTIONS
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MCQOPTIONS
This section includes 869 Mcqs, each offering curated multiple-choice questions to sharpen your BITSAT knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
In the motor generator set, the type of AC motor used is _______ |
| A. | Squirrel cage induction motor |
| B. | Wound rotor induction motor |
| C. | AC commutator motor |
| D. | Synchronous motor |
| Answer» E. | |
| 52. |
A particular amplifier circuit used for frequency doubling is. |
| A. | Push-push |
| B. | Push-pull |
| C. | Pull-push |
| D. | Pull-pull |
| Answer» B. Push-pull | |
| 53. |
________ makes LEDs radiate red or yellow light. |
| A. | Gallium arsenide phosphide |
| B. | Gallium phosphide |
| C. | Gallium |
| D. | Gallium arsenide |
| Answer» B. Gallium phosphide | |
| 54. |
Empire tape is usually made of ______. |
| A. | Vulcanized Rubber |
| B. | calico cloth |
| C. | impregnated paper |
| D. | varnished cambric |
| Answer» E. | |
| 55. |
A typical solvent used for cleaning of Electronic assemblies is |
| A. | Iso Propyl Alcohol |
| B. | Petrol |
| C. | Carbonated Water |
| D. | Liquid nitrogen |
| Answer» B. Petrol | |
| 56. |
Output voltage V0 of the circuit shown in figure below. (The input voltages are V1 = 2.5 V & V2 = 1 V) |
| A. | 4.0 V |
| B. | -4.0 V |
| C. | -4.5 V |
| D. | 4.5 V |
| Answer» D. 4.5 V | |
| 57. |
In an FET, when drain voltage equals the pinch-off voltage, then drain current ______ with the increase in drain voltage |
| A. | decreases |
| B. | increases |
| C. | remains constant |
| D. | none of the above |
| Answer» D. none of the above | |
| 58. |
For Gunn diodes, semiconductor material preferred is |
| A. | Silicon |
| B. | Germanium |
| C. | Gallium Arsenide |
| D. | All of these |
| Answer» D. All of these | |
| 59. |
LED is a |
| A. | p-n diode |
| B. | Thermistor |
| C. | Gate |
| D. | Transistor |
| Answer» B. Thermistor | |
| 60. |
If a regulator IC provides a voltage higher than input, then the converter is knows as ___. |
| A. | Boost |
| B. | Buck |
| C. | Buffer |
| D. | Buck Boost |
| Answer» B. Buck | |
| 61. |
In LC transistor oscillator, the active component used is: |
| A. | Inductor |
| B. | Capacitor |
| C. | Resistor |
| D. | Transistor |
| Answer» E. | |
| 62. |
An inverter circuit is used to convert: |
| A. | D.C. to A.C. |
| B. | Low frequency to high frequency |
| C. | A.C. to D.C. |
| D. | High frequency to low frequency |
| Answer» B. Low frequency to high frequency | |
| 63. |
Oscillators operate on the principle of |
| A. | Positive feedback |
| B. | Negative feedback |
| C. | Signal feedthrough |
| D. | Attenuation |
| Answer» B. Negative feedback | |
| 64. |
Following are the applications of a Buck and Boost Converters respectivelyA. Regulated power supplyB. Regenerative braking of DC motorsC. DC motor speed control |
| A. | A, B |
| B. | B, C |
| C. | A, C |
| D. | B, A |
| Answer» B. B, C | |
| 65. |
In the voltage amplifier ________. |
| A. | Output voltage is zero. |
| B. | Output voltage is lower than the input voltage. |
| C. | Output voltage is equal to the input voltage. |
| D. | Output voltage is larger than the input voltage. |
| Answer» E. | |
| 66. |
Power transistors with heat sink are fixed by |
| A. | Welding |
| B. | Fastening |
| C. | Bonding |
| D. | Taping |
| Answer» C. Bonding | |
| 67. |
A parametric amplifier is to be cooled: |
| A. | To improve noise performance |
| B. | To increase bandwidth |
| C. | To make it suitable for pulses |
| D. | As it cannot be used at room temperature |
| Answer» B. To increase bandwidth | |
| 68. |
In this circuit, the magnitude of the output voltage Vo is: |
| A. | \(V_0 = V_ie^{V_o / V_T}\) |
| B. | \(V_0 = V_T \ln \frac {V_i}{R_sI_S}\) |
| C. | V0 = Vi - ICRS |
| D. | None of these |
| Answer» C. V0 = Vi - ICRS | |
| 69. |
Duty cycle for repetitive waveform is defined as |
| A. | ratio of ON time to Total time |
| B. | sum of ON time and OFF time |
| C. | ratio of OFF time to ON time |
| D. | ratio of Total time to ON time |
| Answer» B. sum of ON time and OFF time | |
| 70. |
As compared to FET, BJT has ________ input impedance and ________ output impedance. |
| A. | low, low |
| B. | low, high |
| C. | high, high |
| D. | high, low |
| Answer» C. high, high | |
| 71. |
IC 555 is used for |
| A. | Regulating voltage |
| B. | Providing amplification |
| C. | Filtering |
| D. | Making oscillator |
| Answer» E. | |
| 72. |
A forward potential of 10 V is applied to a Si diode. A resistance of 1 KΩ is in series with the diode. The current through the diode is |
| A. | 10 mA |
| B. | 9.3 mA |
| C. | 0.7 mA |
| D. | 0 mA |
| Answer» C. 0.7 mA | |
| 73. |
The resistivity of intrinsic semiconductor material is about |
| A. | 10⁵ ohm-m |
| B. | 10³ ohm-m |
| C. | 100 ohm-m |
| D. | 1 ohm-m |
| Answer» E. | |
| 74. |
N-type silicon is obtained by doping silicon with |
| A. | germanium |
| B. | aluminium |
| C. | boron |
| D. | phosphorus |
| Answer» E. | |
| 75. |
Work function of oxide coated cathode is much lower than that of tungsten cathode. |
| A. | True |
| B. | False |
| C. | May be True or False |
| D. | Can't say |
| Answer» B. False | |
| 76. |
Epitaxial growth is used in ICs |
| A. | because it produces low parasitic capacitance |
| B. | because it yields back to back isolating pn Junction |
| C. | to grow single crystal n doped silicon on a single crystal P-type substrate |
| D. | to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity |
| Answer» E. | |
| 77. |
Assertion (A): In a BJT base current is very small.Reason (R): In a BJT recombination in base region is high. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» D. A is false but R is true | |
| 78. |
What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode? |
| A. | The duration of output waveform is less than 180° |
| B. | Output voltage is less than input voltage |
| C. | Output voltage is more than input voltage |
| D. | Both (a) and (b) |
| Answer» E. | |
| 79. |
Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.Reason (R): A high inverse voltage can destroy a p-n junction. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 80. |
For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about |
| A. | 100 mW |
| B. | 250 mW |
| C. | 450 mW |
| D. | 600 mW |
| Answer» C. 450 mW | |
| 81. |
In n type semiconductor, the free electron concentration |
| A. | is nearly equal to density of donor atoms |
| B. | is much greater than density of donor atoms |
| C. | is much less than density of donor atoms |
| D. | may be equal to or more or less than density of donor atoms |
| Answer» B. is much greater than density of donor atoms | |
| 82. |
Assertion (A): In CE connection of n-p-n transistor. VCE is positive. Reason (R): In BJT, the base collector junction is reverse biased. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 83. |
Photo electric emission can occur only if |
| A. | wave length of incident radiation is equal to threshold value |
| B. | wave length of incident radiation is less than threshold value |
| C. | frequency of incident radiation is less than threshold frequency |
| D. | none of the above |
| Answer» C. frequency of incident radiation is less than threshold frequency | |
| 84. |
Which of these has highly doped p and n region? |
| A. | PIN diode |
| B. | Tunnel diode |
| C. | Schottky diode |
| D. | Photodiode |
| Answer» C. Schottky diode | |
| 85. |
An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is |
| A. | 0 to 200 Ω |
| B. | 200 - 400 Ω |
| C. | 200 Ω and above |
| D. | 400 Ω and above |
| Answer» E. | |
| 86. |
Fermi level is the maximum energy that an electron can possess at 0 K. |
| A. | True |
| B. | False |
| C. | May be True or False |
| D. | Can't say |
| Answer» B. False | |
| 87. |
Reluctivity is analogous to |
| A. | permeability |
| B. | conductivity |
| C. | resistivity |
| D. | retentivity |
| Answer» D. retentivity | |
| 88. |
In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is proportional to |
| A. | T |
| B. | T² |
| C. | T³ |
| D. | T⁴ |
| Answer» D. T⁴ | |
| 89. |
The light output of LED varies as (current)ⁿ. The value of n is about |
| A. | 0.5 |
| B. | 1 |
| C. | 1.3 |
| D. | 2.1 |
| Answer» D. 2.1 | |
| 90. |
If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the |
| A. | active region |
| B. | saturated region |
| C. | cut off region |
| D. | inverse mode |
| Answer» C. cut off region | |
| 91. |
Hall effect can be used to find the type of semiconductor. |
| A. | True |
| B. | False |
| C. | May be True or False |
| D. | Can't say |
| Answer» B. False | |
| 92. |
The current due to thermionic emission is proportional to |
| A. | T |
| B. | T² |
| C. | T³ |
| D. | T⁴ |
| Answer» C. T³ | |
| 93. |
The output characteristics of a bipolar transistor has three distinct regions. They are known as |
| A. | saturation region, active region and breakdown region |
| B. | inactive region, active region and breakdown region |
| C. | inactive region, saturation region and active region |
| D. | inactive region, saturation region and breakdown region |
| Answer» B. inactive region, active region and breakdown region | |
| 94. |
Assertion (A): When light falls at junction of p-n photodiode, its p side becomes positive and n side becomes negative.Reason (R): When a photodiode is short circuited, the current in the external circuit flows from p side to n side. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 95. |
The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification |
| A. | AB |
| B. | BC |
| C. | CD |
| D. | BD |
| Answer» C. CD | |
| 96. |
The cut in voltage of a diode is nearly equal to |
| A. | applied forward voltage |
| B. | applied reverse voltage |
| C. | barrier potential |
| D. | none of the above |
| Answer» D. none of the above | |
| 97. |
The turn on time of an SCR is 5 micro second. Its trigger pulse should have |
| A. | short rise time with pulse width = 2.5 μs |
| B. | long rise time with pulse width = 3 μs |
| C. | short rise time with pulse width = 4 μs |
| D. | long rise time with pulse width = 4 μs |
| Answer» D. long rise time with pulse width = 4 μs | |
| 98. |
Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry? |
| A. | NPN germanium transistor |
| B. | NPN silicon transistor |
| C. | PNP germanium transistor |
| D. | PNP silicon transistor |
| Answer» C. PNP germanium transistor | |
| 99. |
If αac for transistor is 0.98 then βac is equal to |
| A. | 51 |
| B. | 49 |
| C. | 47 |
| D. | 45 |
| Answer» C. 47 | |
| 100. |
Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» D. A is false but R is true | |