Explore topic-wise MCQs in BITSAT.

This section includes 869 Mcqs, each offering curated multiple-choice questions to sharpen your BITSAT knowledge and support exam preparation. Choose a topic below to get started.

851.

Each cell of a static Random Access memory contains

A. 6 MOS transistor
B. 4 MOS transistor, 2 capacitor
C. 2 MOS transistor, 4 capacitor
D. 1 MOS transistor and 1 capacitor
Answer» B. 4 MOS transistor, 2 capacitor
Discussion
852.

Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10¯⁸ amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.

A. 4.983 V, 0.017 V
B. - 4.98 V, - 0.017 V
C. 0.17 V, 4.983 V
D. - 0.017 V, - 4.98 V
Answer» C. 0.17 V, 4.983 V
Discussion
853.

As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the equation

A. A
B. B
C. C
D. D
Answer» C. C
Discussion
854.

From the given circuit below, we can conclude that.

A. BJT is pnp
B. BJT is npn
C. transistor is faulty
D. not possible to determined
Answer» D. not possible to determined
Discussion
855.

In the circuit of figure the function of resistor R and diode D are

A. to limit the current and to protect LED against over voltage
B. to limit the voltage and to protect LED against over current
C. to limit the current and protect LED against reverse breakdown voltage
D. none of the above
Answer» D. none of the above
Discussion
856.

The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification.

A. AB
B. BC
C. CD
D. BD
Answer» C. CD
Discussion
857.

In a P-N junction the barrier potential offers opposition to only:

A. Free electrons in N-region
B. Holes in P-region
C. Minority carriers in both regions
D. Majority carriers in both regions
Answer» E.
Discussion
858.

The logic 1 in positive logic system is represented by ?

A. Lower voltage level
B. Zero voltage
C. Negative voltage
D. Higher voltage level
Answer» E.
Discussion
859.

An example of solid state device is:

A. Triode
B. Zener diode
C. Thyratron
D. Pentode
Answer» C. Thyratron
Discussion
860.

Reverse resistance of a diode is of the order of:

A. Ohm
B. Milli ohm
C. Mega ohm
D. Kilo ohm
Answer» D. Kilo ohm
Discussion
861.

For highly doped diode:

A. Avalanche breakdown is likely to take place
B. Zener breakdown is likely to take place
C. Neither ( nor ( can take place
D. Either ( or ( can take place
Answer» C. Neither ( nor ( can take place
Discussion
862.

In Zener diode large reverse current is due to:

A. Presence of impurities
B. Collision
C. Low resistance in the reverse biased region
D. Rupture of bonds
Answer» E.
Discussion
863.

Which function -positive logic is equivalent to OR function in negative logic?

A. OR
B. NOT
C. NOR
D. AND
Answer» E.
Discussion
864.

In the depletion region in the P-N junction there are:

A. No current
B. No charges
C. No electron
D. No mobile charges
Answer» E.
Discussion
865.

A Thyratron is a:

A. Gas filled triode
B. Gas filled diode
C. Gas filled pentode
D. Gas filled tetrode
Answer» B. Gas filled diode
Discussion
866.

Which of the following logic expressions is wrong ?

A. 1 1=0
B. 1 0=1
C. 1 1 1=1
D. 1 0 1=1
Answer» E.
Discussion
867.

The arrow head of transistor symbol always shows the direction of:

A. Conventional current flow
B. Electron flow in emitter region
C. Minority carrier flow in the emitter region
D. Majority carrier flow in the emitter region
Answer» B. Electron flow in emitter region
Discussion
868.

Which of the following property is true in context of Well Formed Formula(WFF) ?

A. If x and y are terms then x = y is a formula
B. Each letter is a term
C. All of above
D. If P is a formula then 7p is a formula
Answer» B. Each letter is a term
Discussion
869.

LEDs are fabricated from:

A. Germanium
B. Silicon
C. Gallium arsenide
D. Si or Ge
Answer» D. Si or Ge
Discussion