MCQOPTIONS
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MCQOPTIONS
This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The expression for threshold voltage for the enhancement mode nMOSFET is: |
| A. | Φgc-2ϕf-Qbo/Cox-Qox/Cox |
| B. | Φgc+ϕf-Qbo/Cox |
| C. | Φgc-ϕf-Qbo/Cox+Qox/Cox |
| D. | Φgc+2ϕf-Qbo/Cox-Qox/Cox |
| Answer» B. Φgc+ϕf-Qbo/Cox | |
| 2. |
The threshold voltage depends on: |
| A. | The workfunction difference between gate and channel |
| B. | The gate voltage component to change surface potential |
| C. | The gate voltage component to offset the depletion charge and fixed charges in gate oxide |
| D. | All of the mentioned |
| Answer» E. | |
| 3. |
For enhancement mode n-MOSFET, the threshold voltage is: |
| A. | Equal to 0 |
| B. | Greater than zero or Positive quantity |
| C. | Negative voltage or lesser than zero |
| D. | All of the mentioned |
| Answer» C. Negative voltage or lesser than zero | |
| 4. |
Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system. |
| A. | -0.8eV |
| B. | 0.8eV |
| C. | 0.9eV |
| D. | -0.9eV |
| Answer» E. | |
| 5. |
THE_THRESHOLD_VOLTAGE_DEPENDS_ON:?$ |
| A. | The workfunction difference between gate and channel |
| B. | The gate voltage component to change surface potential |
| C. | The gate voltage component to offset the depletion charge and fixed charges in gate oxide |
| D. | All of the mentioned |
| Answer» E. | |
| 6. |
The expression for threshold voltage for the enhancement mode nMOSFET is :$ |
| A. | Φgc-2ϕf-Qbo/Cox-Qox/Cox |
| B. | Φgc+ϕf-Qbo/Cox |
| C. | Φgc-ϕf-Qbo/Cox+Qox/Cox |
| D. | Φgc+2ϕf-Qbo/Cox-Qox/Cox |
| Answer» B. ‚âà√≠¬¨‚àÇgc+‚âà√¨‚àö√òf-Qbo/Cox | |
| 7. |
For enhancement mode n-MOSFET, the threshold voltage is? |
| A. | Equal to 0 |
| B. | Greater than zero or Positive quantity |
| C. | Negative voltage or lesser than zero |
| D. | All of the mentioned |
| Answer» C. Negative voltage or lesser than zero | |
| 8. |
Surface inversion occurs when gate voltage is: |
| A. | Less than zero |
| B. | Less than threshold voltage |
| C. | Equal to threshold voltage |
| D. | Greater than threshold voltage |
| Answer» D. Greater than threshold voltage | |
| 9. |
At threshold Voltage, the surface potential is: |
| A. | – Fermi potential |
| B. | Fermi potential |
| C. | 2 Fermi potential |
| D. | -2 Fermi potential |
| Answer» B. Fermi potential | |
| 10. |
When gate voltage is negative for enhancement mode n-MOS, the direction of electric field will be: |
| A. | Metal to semiconductor |
| B. | Semiconductor to metal |
| C. | No field exists |
| D. | None of the mentioned |
| Answer» C. No field exists | |
| 11. |
Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system: |
| A. | -0.8eV |
| B. | 0.8eV |
| C. | 0.9eV |
| D. | -0.9eV |
| Answer» E. | |
| 12. |
The direction of electric field when the gate voltage is zero: |
| A. | Metal to semiconductor |
| B. | Semiconductor to metal |
| C. | No electric field exists |
| D. | None of the mentioned |
| Answer» B. Semiconductor to metal | |
| 13. |
The Fermi potential is the function of: |
| A. | Temperature |
| B. | Doping concentration |
| C. | Difference between Fermi level and intrinsic Fermi level |
| D. | All of the mentioned |
| Answer» E. | |
| 14. |
The electrical equivalent component for MOS structure is: |
| A. | Resistor |
| B. | Capacitor |
| C. | Inductor |
| D. | Switch |
| Answer» C. Inductor | |