What is the work of BJT in BiCMOS?

Current controlled current source

Current controlled Voltage source

Voltage controlled Current source

Current controlled current source

Voltage controlled current source

In the following diagram of BiCMOS, the labels a, b, c, d denote?

A = Collector, B = Emitter, C = Drain, D = Source

A = Collector, B = Base, C = Source, D = Drain

A = Emitter, B = Base, C = Drain, D = Source

A = Emitter, B = Collector, C = Source, D = Drain

A = Collector, B = Emitter, C = Drain, D = Source

The collector contact region is doped with higher concentration of n-type impurities due to __________

It can withstand high voltages as compared to collector region

It creates a depletion region at the contact surface

It creates a low conductivity path between collector region and contact

It can withstand high voltages as compared to collector region

The n-well collector is formed by __________

Heavily doped n-type epitaxial layer on p-Substrate

Lightly doped n-type epitaxial layer on p-Substrate

Heavily doped n-type epitaxial layer on p-Substrate

Lightly doped n-type diffused layer on p-Substrate

Heavily doped n-type diffused layer on p-Substrate

Which of the following is the drawback of the BiCMOS circuits?

Sensitivity is less load capacitance

Bipolar transistors are used for driving current to the load capacitance but not for the logic operations

Increased fabrication Complexity

The BiCMOS are preferred over CMOS due to ______________

Switching speed is more compared to CMOS

Sensitivity is less with respect to the load capacitance

The BJT in BiCMOS works as a:$

Current controlled current source

Current controlled Voltage source

Voltage controlled Current source

Current controlled current source

Voltage controlled current source

The collector contact region is doped with higher concentration of n-type impurities due to?

It can withstand high voltages as compared to collector region

It creates a depletion region at the contact surface

It creates a low conductivity path between collector region and contact

It reduces a contact resistance

It can withstand high voltages as compared to collector region

The n-well collector is formed by:

Heavily doped n-type epitaxial layer on p-Substrate

Lightly doped n-type epitaxial layer on p-Substrate

Heavily doped n-type epitaxial layer on p-Substrate

Lightly doped n-type diffused layer on p-Substrate

Heavily doped n-type diffused layer on p-Substrate

The drawback of the BiCMOS circuits are:

Sensitivity is less load capacitance

Bipolar transistors are used for driving current to the load capacitance but not for the logic operations

Increased fabrication Complexity

The BiCMOS are preferred over CMOS due to:

Switching speed is more compared to CMOS

Sensitivity is less with respect to load capacitance

23 + Mcqs in Bicmos Logic Gates in Vlsi Page 1 McqOptions

1.	In BiCMOS, the analysis of the operation of BJT is well explained by ___________
A.	RC Model
B.	Emitter resister model
C.	Ebers Moll Model
D.	Hybrid model
Answer» D. Hybrid model

Discussion

2.	What is the work of BJT in BiCMOS?
A.	Current controlled Voltage source
B.	Voltage controlled Current source
C.	Current controlled current source
D.	Voltage controlled current source
Answer» C. Current controlled current source

Discussion

3.	In the following diagram of BiCMOS, the labels a, b, c, d denote?
A.	A = Collector, B = Base, C = Source, D = Drain
B.	A = Emitter, B = Base, C = Drain, D = Source
C.	A = Emitter, B = Collector, C = Source, D = Drain
D.	A = Collector, B = Emitter, C = Drain, D = Source
Answer» D. A = Collector, B = Emitter, C = Drain, D = Source

Discussion

4.	The collector contact region is doped with higher concentration of n-type impurities due to __________
A.	It creates a depletion region at the contact surface
B.	It creates a low conductivity path between collector region and contact
C.	It reduces contact resistance
D.	It can withstand high voltages as compared to collector region
Answer» D. It can withstand high voltages as compared to collector region

Discussion

5.	The n-well collector is formed by __________
A.	Lightly doped n-type epitaxial layer on p-Substrate
B.	Heavily doped n-type epitaxial layer on p-Substrate
C.	Lightly doped n-type diffused layer on p-Substrate
D.	Heavily doped n-type diffused layer on p-Substrate
Answer» B. Heavily doped n-type epitaxial layer on p-Substrate

Discussion

6.	The n-well created for Bipolar Transistor in BiCMOS is used as __________
A.	Substrate
B.	Collector
C.	Emitter
D.	None of the mentioned
Answer» C. Emitter

Discussion

7.	The Bipolar Transistor is fabricated on __________
A.	Same substrate of nMOS
B.	N-well in p Substrate
C.	P-well in n Substrate
D.	Same substrate of pMOS
Answer» B. N-well in p Substrate

Discussion

8.	Which of the following is the drawback of the BiCMOS circuits?
A.	Sensitivity is less load capacitance
B.	Bipolar transistors are used for driving current to the load capacitance but not for the logic operations
C.	Increased fabrication Complexity
D.	All of the mentioned
Answer» D. All of the mentioned

Discussion

9.	In BiCMOS inverter, the BJT used are __________
A.	Only Npn BJT
B.	Only Pnp BJT
C.	Both npn and pnp BJT
D.	Multi emitter npn BJT
Answer» B. Only Pnp BJT

Discussion

10.	The high current driving capability of the BiCMOS is due to __________
A.	NMOS in saturation mode
B.	PMOS in saturation mode
C.	CMOS
D.	BJT
Answer» E.

Discussion

11.	The transistors used in BiCMOS are __________
A.	BJT
B.	MOSFET
C.	Both BJT and MOSFETs
D.	JFET
Answer» D. JFET

Discussion

12.	The BiCMOS are preferred over CMOS due to ______________
A.	Switching speed is more compared to CMOS
B.	Sensitivity is less with respect to the load capacitance
C.	High current drive capability
D.	All of the mentioned
Answer» E.

Discussion

13.	The BJT in BiCMOS works as a:$
A.	Current controlled Voltage source
B.	Voltage controlled Current source
C.	Current controlled current source
D.	Voltage controlled current source
Answer» C. Current controlled current source

Discussion

14.	In BiCMOS, the analysis of the operation of BJT is well explained by:
A.	RC Model
B.	Emitter resister model
C.	Ebers Moll Model
D.	Hybrid model
Answer» D. Hybrid model

Discussion

15.	The collector contact region is doped with higher concentration of n-type impurities due to?
A.	It creates a depletion region at the contact surface
B.	It creates a low conductivity path between collector region and contact
C.	It reduces a contact resistance
D.	It can withstand high voltages as compared to collector region
Answer» D. It can withstand high voltages as compared to collector region

Discussion

16.	The n-well collector is formed by:
A.	Lightly doped n-type epitaxial layer on p-Substrate
B.	Heavily doped n-type epitaxial layer on p-Substrate
C.	Lightly doped n-type diffused layer on p-Substrate
D.	Heavily doped n-type diffused layer on p-Substrate
Answer» B. Heavily doped n-type epitaxial layer on p-Substrate

Discussion

17.	The n-well created for Bipolar Transistor in BiCMOS is used as:
A.	Substrate
B.	Collector
C.	Emitter
D.	None of the mentioned
Answer» C. Emitter

Discussion

18.	The Bipolar Transistor is fabricated on :
A.	Same substrate of nMOS
B.	N-well in p Substrate
C.	P-well in n Substrate
D.	Same substrate of pMOS
Answer» B. N-well in p Substrate

Discussion

19.	The drawback of the BiCMOS circuits are:
A.	Sensitivity is less load capacitance
B.	Bipolar transistors are used for driving current to the load capacitance but not for the logic operations
C.	Increased fabrication Complexity
D.	All of the mentioned
Answer» D. All of the mentioned

Discussion

20.	In BiCMOS inverter, the BJT used are:
A.	Only Npn BJT
B.	Only Pnp BJT
C.	Both npn and pnp BJT
D.	Multi emitter npn BJT
Answer» B. Only Pnp BJT

Discussion

21.	The high current driving capability of the BiCMOS is due to:
A.	NMOS in saturation mode
B.	PMOS in saturation mode
C.	CMOS
D.	BJT
Answer» E.

Discussion

22.	The transistors used in BiCMOS are:
A.	BJT
B.	MOSFET
C.	Both BJT and MOSFETs
D.	JFET
Answer» D. JFET

Discussion

23.	The BiCMOS are preferred over CMOS due to:
A.	Switching speed is more compared to CMOS
B.	Sensitivity is less with respect to load capacitance
C.	High current drive capability
D.	All of the mentioned
Answer» E.

Discussion

Explore topic-wise MCQs in Vlsi.

In BiCMOS, the analysis of the operation of BJT is well explained by ___________

What is the work of BJT in BiCMOS?

In the following diagram of BiCMOS, the labels a, b, c, d denote?

The collector contact region is doped with higher concentration of n-type impurities due to __________

The n-well collector is formed by __________

The n-well created for Bipolar Transistor in BiCMOS is used as __________

The Bipolar Transistor is fabricated on __________

Which of the following is the drawback of the BiCMOS circuits?

In BiCMOS inverter, the BJT used are __________

The high current driving capability of the BiCMOS is due to __________

The transistors used in BiCMOS are __________

The BiCMOS are preferred over CMOS due to ______________

The BJT in BiCMOS works as a:$

In BiCMOS, the analysis of the operation of BJT is well explained by:

The collector contact region is doped with higher concentration of n-type impurities due to?

The n-well collector is formed by:

The n-well created for Bipolar Transistor in BiCMOS is used as:

The Bipolar Transistor is fabricated on :

The drawback of the BiCMOS circuits are:

In BiCMOS inverter, the BJT used are:

The high current driving capability of the BiCMOS is due to:

The transistors used in BiCMOS are:

The BiCMOS are preferred over CMOS due to: