

MCQOPTIONS
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This section includes 19 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
1. |
Bipolar transistor is a symmetrical device. |
A. | true |
B. | false |
Answer» C. | |
2. |
In bipolar transistor, which is heavily doped? |
A. | base region |
B. | emitter region |
C. | collector region |
D. | base and emitter |
Answer» C. collector region | |
3. |
Bipolar transistor exhibits _______ delay. |
A. | turn on |
B. | turn off |
C. | storage |
D. | all of the mentioned |
Answer» E. | |
4. |
Which has better I/A? |
A. | CMOS |
B. | bipolar |
C. | nMOS |
D. | pMOS |
Answer» C. nMOS | |
5. |
Transconductance is a __________ |
A. | weak function |
B. | strong function |
C. | weak and strong function |
D. | none of the mentioned |
Answer» B. strong function | |
6. |
gm is _______ to Ic. |
A. | directly proportional |
B. | inversely proportional |
C. | not dependent |
D. | exponentially proportional |
Answer» B. inversely proportional | |
7. |
gm is ______ on input voltage Vbe. |
A. | inversely proportional |
B. | proportional |
C. | exponentially dependent |
D. | is not dependent |
Answer» D. is not dependent | |
8. |
The transconductance of a bipolar is given by ______________ |
A. | (kT/q)/Ic |
B. | Ic/(kT/q) |
C. | (q/KT)/Ic |
D. | Ic/(q/KT) |
Answer» C. (q/KT)/Ic | |
9. |
IN_BIPOLAR_TRANSISTOR,_WHICH_IS_HEAVILY_DOPED??$ |
A. | base region |
B. | emitter region |
C. | collector region |
D. | base and emitter |
Answer» C. collector region | |
10. |
Bipolar transistor is a symmetrical device.$ |
A. | true |
B. | false |
Answer» C. | |
11. |
Bipolar transistor exhibits _______ dela? |
A. | turn on |
B. | turn off |
C. | storage |
D. | all of the mentioned |
Answer» E. | |
12. |
Which has better I/A ? |
A. | CMOS |
B. | bipolar |
C. | nMOS |
D. | pMOS |
Answer» C. nMOS | |
13. |
Which of the following is true when inputs are controlled by equal amounts of charge? |
A. | Cg(MOS) = Cbase(bipolar) |
B. | Cg(MOS) greater than Cbase(bipolar) |
C. | Cg(MOS) lesser than Cbase(bipolar) |
D. | Cs(MOS) lesser than Cbase(bipolar) |
Answer» B. Cg(MOS) greater than Cbase(bipolar) | |
14. |
gm of bipolar is less than gm of MOS. |
A. | true |
B. | false |
Answer» C. | |
15. |
Transconductance is a |
A. | weak function |
B. | strong function |
C. | both |
D. | none of the mentioned |
Answer» B. strong function | |
16. |
gm is _______ to Ic |
A. | directly proportional |
B. | inversely proportional |
C. | not dependent |
D. | exponentially proportional |
Answer» B. inversely proportional | |
17. |
gm is ______ on input voltage Vbe |
A. | inversely proportional |
B. | proportional |
C. | exponentially dependent |
D. | is not dependent |
Answer» D. is not dependent | |
18. |
Transconductance depends on the process. |
A. | true |
B. | false |
Answer» C. | |
19. |
Transconductance of a bipolar is given by |
A. | (kT/q)/Ic |
B. | Ic/(kT/q) |
C. | (q/KT)/Ic |
D. | Ic/(q/KT) |
Answer» C. (q/KT)/Ic | |