Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system:

Consider a MOS structure with equilibrium Fermi potential of the doped

1.	Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system:
A.	-0.8eV
B.	0.8eV
C.	0.9eV
D.	-0.9eV
Answer» E.