MCQOPTIONS
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MCQOPTIONS
This section includes 17 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
For a JFET, the value of V DS at which I D becomes essentially constant is the |
| A. | pinch-off voltage. |
| B. | cutoff voltage. |
| C. | breakdown voltage. |
| D. | ohmic voltage. |
| Answer» B. cutoff voltage. | |
| 2. |
If V D is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n) |
| A. | open R G . |
| B. | open gate lead. |
| C. | FET internally open at gate. |
| D. | all of the above |
| Answer» E. | |
| 3. |
A JFET data sheet specifies V GS(off) = –10 V and I DSS = 8 mA. Find the value of I D when V GS = –3 V. |
| A. | 2 mA |
| B. | 1.4 mA |
| C. | 4.8 mA |
| D. | 3.92 mA |
| Answer» E. | |
| 4. |
A JFET data sheet specifies V GS(off) = –6 V and I DSS = 8 mA. Find the value of I D when V GS = –3 V. |
| A. | 2 mA |
| B. | 4 mA |
| C. | 8 mA |
| D. | none of the above |
| Answer» B. 4 mA | |
| 5. |
For a JFET, the change in drain current for a given change in gate-to-source voltage, with the drain-to-source voltage constant, is |
| A. | breakdown. |
| B. | reverse transconductance. |
| C. | forward transconductance. |
| D. | self-biasing. |
| Answer» D. self-biasing. | |
| 6. |
High input resistance for a JFET is due to |
| A. | a metal oxide layer. |
| B. | a large input resistor to the device. |
| C. | an intrinsic layer. |
| D. | the gate-source junction being reverse-biased. |
| Answer» E. | |
| 7. |
The resistance of a JFET biased in the ohmic region is controlled by |
| A. | V D. |
| B. | V GS. |
| C. | V S. |
| D. | V DS. |
| Answer» C. V S. | |
| 8. |
What three areas are the drain characteristics of a JFET (V GS = 0) divided into? |
| A. | ohmic, constant-current, breakdown |
| B. | pinch-off, constant-current, avalanche |
| C. | ohmic, constant-voltage, breakdown |
| D. | - |
| Answer» B. pinch-off, constant-current, avalanche | |
| 9. |
A dual-gated MOSFET is |
| A. | a depletion MOSFET. |
| B. | an enhancement MOSFET. |
| C. | a VMOSFET. |
| D. | either a depletion or an enhancement MOSFET. |
| Answer» E. | |
| 10. |
All MOSFETs are subject to damage from electrostatic discharge (ESD). |
| A. | true |
| B. | false |
| C. | - |
| D. | - |
| Answer» B. false | |
| 11. |
The value of V GS that makes I D approximately zero is the |
| A. | pinch-off voltage. |
| B. | cutoff voltage. |
| C. | breakdown voltage. |
| D. | ohmic voltage. |
| Answer» C. breakdown voltage. | |
| 12. |
Which of the following devices has the highest input resistance? |
| A. | diode |
| B. | JFET |
| C. | MOSFET |
| D. | bipolar junction transistor |
| Answer» D. bipolar junction transistor | |
| 13. |
On the drain characteristic curve of a JFET for V GS = 0, the pinch-off voltage is |
| A. | below the ohmic area. |
| B. | between the ohmic area and the constant current area. |
| C. | between the constant current area and the breakdown region. |
| D. | above the breakdown region. |
| Answer» C. between the constant current area and the breakdown region. | |
| 14. |
Midpoint bias for a D-MOSFET is I D = ________, obtained by setting V GS = 0. |
| A. | I DSS / 2 |
| B. | I DSS / 3.4 |
| C. | I DSS |
| D. | - |
| Answer» D. - | |
| 15. |
What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with? |
| A. | zero |
| B. | positive |
| C. | negative |
| D. | any of the above |
| Answer» E. | |
| 16. |
The ________ has a physical channel between the drain and source. |
| A. | D-MOSFET |
| B. | E-MOSFET |
| C. | V-MOSFET |
| D. | - |
| Answer» B. E-MOSFET | |
| 17. |
A self-biased n-channel JFET has a V D = 6 V. V GS = –3 V. Find the value of V DS . |
| A. | –3 V |
| B. | –6 V |
| C. | 3 V |
| D. | 6 V |
| Answer» D. 6 V | |