MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 68 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
There is(are) ________ in the internal construction of a TO-92 package. |
| A. | gold bond wires |
| B. | a copper frame |
| C. | epoxy encapsulation |
| D. | All of the above |
| Answer» E. | |
| 2. |
The leads of a transistor are typically made of ________. |
| A. | gold |
| B. | aluminum |
| C. | nickel |
| D. | All of the above |
| Answer» C. nickel | |
| 3. |
If the positive lead of an ohmmeter is connected to the base and the negative lead to the emitter, a low resistance reading would indicate a ________ transistor and a high resistance reading would indicate a ________ transistor. |
| A. | npn, pnp |
| B. | pnp, npn |
| C. | npn, npn |
| D. | pnp, pnp |
| Answer» B. pnp, npn | |
| 4. |
An OL indication on an advanced digital meter indicates ________ while checking a transistor. |
| A. | forward bias |
| B. | reverse bias |
| C. | definitely a defective transistor |
| D. | None of the above |
| Answer» C. definitely a defective transistor | |
| 5. |
When checking a transistor by ohmmeter, a relatively ________ resistance is displayed for a forward-biased junction and ________ resistance for a reverse-biased junction. |
| A. | low, very high |
| B. | low, low |
| C. | high, high |
| D. | high, very low |
| Answer» B. low, low | |
| 6. |
The level of ________ is determined and displayed by advanced digital meters if using diode-testing mode. |
| A. | VBE |
| B. | IC |
| C. | IB |
| D. | IE |
| Answer» B. IC | |
| 7. |
The level of ________ is determined and displayed by advanced digital meters. |
| A. | VCE |
| B. | IB |
| C. | IC |
| D. | dc |
| Answer» E. | |
| 8. |
The step function (per step) of a curve tracer reveals the scale for ________. |
| A. | collector current IC |
| B. | VCE voltage |
| C. | base current IB |
| D. | All of the above |
| Answer» D. All of the above | |
| 9. |
The "on" and "off" characteristics refer to ________ limits while the small-signal characteristics indicate the parameters of importance to ________ operation. |
| A. | ac, dc |
| B. | dc, ac |
| C. | ac, dc and ac |
| D. | dc and ac, dc |
| Answer» C. ac, dc and ac | |
| 10. |
The common-collector configuration has a ________ input impedance and a ________ output impedance. |
| A. | low, high |
| B. | high, low |
| C. | high, high |
| D. | low, low |
| Answer» C. high, high | |
| 11. |
The active region of a transistor is bounded by the ________. |
| A. | cutoff region |
| B. | saturation region |
| C. | power dissipation curve |
| D. | All of the above |
| Answer» E. | |
| 12. |
If a value of is specified for a particular transistor configuration it will normally be used for ________ calculations. |
| A. | ac |
| B. | dc |
| C. | ac and dc |
| D. | None of the above |
| Answer» D. None of the above | |
| 13. |
Typical values of voltage amplification for the common-base configurations vary from ________ and the current gain is always ________ . |
| A. | less than 1, 50 to 300 |
| B. | 50 to 300, larger than 1 |
| C. | 50 to 300, less than 1 |
| D. | larger than 1, 50 to 300 |
| Answer» D. larger than 1, 50 to 300 | |
| 14. |
In the saturation region the collector-base junction is ________-biased and the base-emitter junction is ________-biased for a transistor. |
| A. | reverse, forward |
| B. | forward, reverse |
| C. | reverse, reverse |
| D. | forward, forward |
| Answer» E. | |
| 15. |
For practical transistors the level of alpha typically extends from ________ to ________ with most approaching the higher end of the range. |
| A. | 0.0, 1 |
| B. | 0.90, 0.998 |
| C. | 50, 400 |
| D. | None of the above |
| Answer» C. 50, 400 | |
| 16. |
In the cutoff region the collector-base junction is ________-biased and the base-emitter junction is ________-biased for a transistor. |
| A. | reverse, forward |
| B. | forward, reverse |
| C. | reverse, reverse |
| D. | forward, forward |
| Answer» D. forward, forward | |
| 17. |
The ________ region is the region normally employed for linear (undistorted) amplifiers. |
| A. | active |
| B. | cutoff |
| C. | saturation |
| D. | All of the above |
| Answer» B. cutoff | |
| 18. |
The base current is the ________ of the emitter and collector currents. |
| A. | sum |
| B. | difference |
| C. | product |
| D. | None of the above |
| Answer» C. product | |
| 19. |
The doping of the sandwiched layer is ________ that of the outer layers. |
| A. | considerably less than |
| B. | the same as |
| C. | considerably more than |
| D. | None of the above |
| Answer» B. the same as | |
| 20. |
One p-n junction of a transistor is ________-biased and the other one is ________-biased in the active region. |
| A. | reverse, reverse |
| B. | forward, forward |
| C. | reverse, forward |
| D. | None of the above |
| Answer» D. None of the above | |
| 21. |
The magnitude of the base current is typically on the order of ________ as compared to ________ for the emitter. |
| A. | A, A |
| B. | A, mA |
| C. | mA, A |
| D. | mA, mA |
| Answer» C. mA, A | |
| 22. |
The term bipolar reflects the fact that ________ and ________ participate in the injection process into the oppositely polarized material. |
| A. | holes, neutrons |
| B. | holes, electrons |
| C. | neutrons, electrons |
| D. | None of the above |
| Answer» C. neutrons, electrons | |
| 23. |
The lower doping level ________ the conductivity and ________ the resistivity of the material. |
| A. | increases, decreases |
| B. | increases, increases |
| C. | decreases, decreases |
| D. | decreases, increases |
| Answer» E. | |
| 24. |
The outer layers of a transistor are ________ the sandwiched layer. |
| A. | much smaller than |
| B. | the same as |
| C. | much larger than |
| D. | None of the above |
| Answer» D. None of the above | |
| 25. |
All amplifiers should have at least ________ terminals with ________ terminal(s) controlling the flow between ________ other terminal(s). |
| A. | 2, 1, 1 |
| B. | 3, 1, 2 |
| C. | 3, 2, 1 |
| D. | 3, 0, 3 |
| Answer» C. 3, 2, 1 | |
| 26. |
Which of the following can be obtained from the last scale factor of a curve tracer? |
| A. | hFE |
| B. | dc |
| C. | ac |
| D. | ac |
| Answer» E. | |
| 27. |
Calculate ac for IC = 15 mA and VCE = 5 V. |
| A. | 200 |
| B. | 180 |
| C. | 220 |
| D. | None of the above |
| Answer» B. 180 | |
| 28. |
dc for this set of collector characteristics is within ________ percent of ac. |
| A. | 2 |
| B. | 5 |
| C. | 7 |
| D. | 10 |
| Answer» E. | |
| 29. |
Use this table of collector characteristics to calculate ac at VCE = 15 V and IB = 30 A. |
| A. | 100 |
| B. | 106 |
| C. | 50 |
| D. | 400 |
| Answer» B. 106 | |
| 30. |
Determine the value of when = 100. |
| A. | 1.01 |
| B. | 101 |
| C. | 0.99 |
| D. | Cannot be solved with the information provided |
| Answer» D. Cannot be solved with the information provided | |
| 31. |
Calculate dc at VCE = 15 V and IB = 30 A. |
| A. | 100 |
| B. | 116 |
| C. | 50 |
| D. | 110 |
| Answer» E. | |
| 32. |
Calculate minority current ICO if IC = 20.002 mA and IC majority = 20 mA. |
| A. | 20 A |
| B. | 0.002 A |
| C. | 2 nA |
| D. | 2 A |
| Answer» E. | |
| 33. |
For a properly biased pnp transistor, let IC = 10 mA and IE = 10.2 mA. What is the level of IB? |
| A. | 0.2 A |
| B. | 200 mA |
| C. | 200 A |
| D. | 20.2 mA |
| Answer» D. 20.2 mA | |
| 34. |
Which component of the collector current IC is called the leakage current? |
| A. | Majority |
| B. | Independent |
| C. | Minority |
| D. | None of the above |
| Answer» D. None of the above | |
| 35. |
Which component of the collector current I C is called the leakage current? |
| A. | Majority |
| B. | Independent |
| C. | Minority |
| D. | None of the above |
| Answer» D. None of the above | |
| 36. |
What is the ratio of the total width to that of the center layer for a transistor? |
| A. | 1:15 |
| B. | 1:150 |
| C. | 15:1 |
| D. | 150:1 |
| Answer» E. | |
| 37. |
List the types of bipolar junction transistors. |
| A. | ppn, npn |
| B. | pnp, npn |
| C. | npp, ppn |
| D. | nnp, pnp |
| Answer» C. npp, ppn | |
| 38. |
What is dc equal to? |
| A. | I B / I E |
| B. | I C / I E |
| C. | I C / I B |
| D. | None of the above |
| Answer» D. None of the above | |
| 39. |
What is (are) the component(s) of most specification sheets provided by the manufacturer? |
| A. | Maximum ratings |
| B. | Thermal characteristics |
| C. | Electrical characteristics |
| D. | All of the above |
| Answer» E. | |
| 40. |
For a properly biased pnp transistor, let I C = 10 mA and I E = 10.2 mA. What is the level of I B ? |
| A. | 0.2 A |
| B. | 200 mA |
| C. | 200 A |
| D. | 20.2 mA |
| Answer» D. 20.2 mA | |
| 41. |
Most specification sheets are broken down into ________. |
| A. | maximum ratings |
| B. | thermal characteristics |
| C. | electrical characteristics |
| D. | All of the above |
| Answer» E. | |
| 42. |
In what decade was the first transistor created? |
| A. | 1930s |
| B. | 1940s |
| C. | 1950s |
| D. | 1960s |
| Answer» C. 1950s | |
| 43. |
How many individual pnp silicon transistors can be housed in a 14-pin plastic dual-in-line package? |
| A. | 4 |
| B. | 7 |
| C. | 10 |
| D. | 14 |
| Answer» B. 7 | |
| 44. |
Which of the following regions is (are) part of the output characteristics of a transistor? |
| A. | Active |
| B. | Cutoff |
| C. | Saturation |
| D. | All of the above |
| Answer» E. | |
| 45. |
dc for this set of collector characteristics is within ________ percent of ac . |
| A. | 2 |
| B. | 5 |
| C. | 7 |
| D. | 10 |
| Answer» E. | |
| 46. |
What is the most frequently encountered transistor configuration? |
| A. | Common-base |
| B. | Common-collector |
| C. | Common-emitter |
| D. | Emitter-collector |
| Answer» D. Emitter-collector | |
| 47. |
What are the ranges of the ac input and output resistance for a common-base configuration? |
| A. | 10 –100 , 50 k –1 M |
| B. | 50 k –1 M , 10 –100 |
| C. | 10 –100 k , 50 –1 k |
| D. | None of the above |
| Answer» B. 50 k –1 M , 10 –100 | |
| 48. |
dc = ________ |
| A. | I B / I E |
| B. | I C / I E |
| C. | I C / I B |
| D. | None of the above |
| Answer» D. None of the above | |
| 49. |
How many carriers participate in the injection process of a unipolar device? |
| A. | 1 |
| B. | 2 |
| C. | 0 |
| D. | 3 |
| Answer» B. 2 | |
| 50. |
Calculate ac for I C = 15 mA and V CE = 5 V. |
| A. | 200 |
| B. | 180 |
| C. | 220 |
| D. | None of the above |
| Answer» B. 180 | |