Explore topic-wise MCQs in Active Filter Circuits.

This section includes 102 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.

In an emitter-bias configuration, the ________ the resistance RE, the ________ the stability factor, and the ________ stable is the system.

A. smaller, lower, less
B. larger, more, more
C. smaller, more, more
D. larger, lower, more
Answer» E.
Discussion
2.

The ________the stability factor, the ________sensitive the network is to variations in that parameter.

A. higher, more
B. higher, less
C. lower, more
D. None of the above
Answer» B. higher, less
Discussion
3.

A significant increase in leakage current due to increase in temperature creates ________between IB curves.

A. smaller spacing
B. larger spacing
C. the same space as at lower temperature
D. None of the above
Answer» C. the same space as at lower temperature
Discussion
4.

As the temperature increases, ________, VBE ________, and ICO ________ in value for every 10ºC.

A. increases, decreases, doubles
B. decreases, increases, remains the same
C. decreases, increases, doubles
D. increases, increases, triples
Answer» B. decreases, increases, remains the same
Discussion
5.

In any amplifier employing a transistor, the collector current IC is sensitive to ________.

A. [A].
B. VBE
C. ICO
D. All of the above
Answer» E.
Discussion
6.

________ is less dependent on the transistor beta.

A. Fixed bias
B. Emitter bias
C. Voltage divider
D. Voltage feedback
Answer» D. Voltage feedback
Discussion
7.

In a transistor-switching network, the operating point switches from ________ to ________ regions along the load line.

A. cutoff, active
B. cutoff, saturation
C. active, saturation
D. None of the above
Answer» C. active, saturation
Discussion
8.

In a transistor-switching network, the level of the resistance between the collector and emitter is ________ at the saturation and is ________at the cutoff.

A. low, low
B. low, high
C. high, high
D. high, low
Answer» C. high, high
Discussion
9.

________is the least stabilized circuit.

A. Fixed bias
B. Emitter-stabilized bias
C. Voltage divider
D. Voltage feedback
Answer» B. Emitter-stabilized bias
Discussion
10.

In a collector feedback bias circuit, the current through the collector resistor is ________ and the collector current is ________.

A. IC, IC
B. IB + IC, IC
C. IB, IC
D. None of the above
Answer» C. IB, IC
Discussion
11.

The saturation current of a transistor used in a fixed-bias circuit is ________ its value used in an emitter-stabilized or voltage-divider bias circuit for the same values of RC.

A. more than
B. the same as
C. less than
D. None of the above
Answer» B. the same as
Discussion
12.

The Thevenin equivalent network is used in the analysis of the ________ circuit.

A. fixed bias
B. emitter-stabilized bias
C. voltage divider
D. voltage feedback
Answer» D. voltage feedback
Discussion
13.

________is the primary difference between the exact and approximate techniques used in the analysis of a voltage divider circuit.

A. Thevenin voltage ETh
B. Thevenin resistance RTh
C. Base voltage VB
D. RC
Answer» C. Base voltage VB
Discussion
14.

The emitter resistor in an emitter-stabilized bias circuit appears to be ________ in the base circuit.

A. larger
B. smaller
C. the same
D. None of the above
Answer» B. smaller
Discussion
15.

A change in value of ________ will create a new load line parallel to its previous one in a fixed-bias circuit.

A. RB
B. RC
C. VCC
D. VBE
Answer» D. VBE
Discussion
16.

In a fixed-bias circuit, the slope of the dc load line is controlled by ________.

A. RB
B. RC
C. VCC
D. IB
Answer» C. VCC
Discussion
17.

The dc load line is determined solely by the ________.

A. base-emitter loop
B. collector-emitter loop
C. base-collector loop
D. None of the above
Answer» C. base-collector loop
Discussion
18.

In a fixed-bias circuit, the magnitude of IC is controlled by and therefore is a function of ________.

A. RB
B. RC
C. [C].
D. RB and
Answer» E.
Discussion
19.

For a transistor operating in the saturation region, the collector current IC is at its ________ and the collector-emitter voltage VCE is to the ________.

A. minimum, left of the line
B. minimum, right of the line
C. maximum, left of the line
D. maximum, right of the line
Answer» D. maximum, right of the line
Discussion
20.

Changes in temperature will affect the level of ________.

A. current gain
B. leakage current ICEO
C. both current gain and leakage current ICEO
D. None of the above
Answer» D. None of the above
Discussion
21.

In a fixed-bias circuit with a fixed supply voltage VCC, the selection of a ________ resistor sets the level of ________ current for the operating point.

A. collector, base
B. base, base
C. collector, collector
D. None of the above
Answer» C. collector, collector
Discussion
22.

For the dc analysis the network can be isolated from the indicated ac levels by replacing the capacitor with ________.

A. an open circuit equivalent
B. a short circuit equivalent
C. a source voltage
D. None of the above
Answer» B. a short circuit equivalent
Discussion
23.

By definition, quiescent means ________.

A. quiet
B. still
C. inactive
D. All of the above
Answer» E.
Discussion
24.

Determine ICQ at a temperature of 175º C if ICQ = 2 mA at 25º C for RB / RE = 20 due to the S() stability factor.

A. 2.417 mA
B. 2.392 mA
C. 2.25 mA
D. 2.58 mA
Answer» B. 2.392 mA
Discussion
25.

________ should be considered in the analysis or design of any electronic amplifiers.

A. dc
B. ac
C. dc and ac
D. None of the above
Answer» D. None of the above
Discussion
26.

Determine the change in IC from 25ºC to 175ºC for the transistor defined in this table for fixed-bias with RB = 240 k and = 100 due to the S(VBE) stability factor.

A. 145.8 A
B. 145.8 nA
C. –145.8 A
D. –145.8 nA
Answer» B. 145.8 nA
Discussion
27.

Use this table to determine the change in IC from 25ºC to 175ºC for RB / RE = 250 due to the S(ICO) stability factor. Assume an emitter-bias configuration.

A. 140.34 nA
B. 140.34 A
C. 42.53 nA
D. 0.14034 nA
Answer» C. 42.53 nA
Discussion
28.

For the typical transistor amplifier in the active region, VCE is usually about ________ % to ________ % of VCC.

A. 10, 60
B. 25, 75
C. 40, 90
Answer» C. 40, 90
Discussion
29.

For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.

A. True
B. False
Answer» B. False
Discussion
30.

The total time required for the transistor to switch from the "off" to the "on" state is designated as ton and defined as the delay time plus the time element.

A. True
B. False
Answer» B. False
Discussion
31.

Calculate the storage time in a transistor switching network if toff is 56 ns, tf = 14 ns, and tr = 20 ns.

A. 70 ns
B. 42 ns
C. 36 ns
D. 34 ns
Answer» C. 36 ns
Discussion
32.

In the case of this circuit, you must assume that VE = 0.1·VCC in order to calculate RC and RE.

A. True
B. False
Answer» B. False
Discussion
33.

Calculate ETh for this network.

A. −12.12 V
B. 16.35 V
C. −3.65 V
D. 10 V
Answer» D. 10 V
Discussion
34.

Determine the values of VCB and IB for this circuit.

A. 1.4 V, 59.7 A
B. –1.4 V, 59.7 A
C. –9.3 V, 3.58 A
D. 9.3 V, 3.58 A
Answer» B. –1.4 V, 59.7 A
Discussion
35.

Calculate Rsat if VCE = 0.3 V.

A. 49.2
B. 49.2 k
C. 49.2 m
D. 49.2 M
Answer» B. 49.2 k
Discussion
36.

Calculate ICsat.

A. 35.29 mA
B. 5.45 mA
C. 1.86 mA
D. 4.72 mA
Answer» E.
Discussion
37.

Calculate the value of VCEQ.

A. 8.78 V
B. 0 V
C. 7.86 V
D. 18 V
Answer» D. 18 V
Discussion
38.

Determine the reading on the meter when VCC = 20 V, RC = 5 k, and IC = 2 mA.

A. 10 V
B. –10 V
C. 0.7 V
D. 20 V
Answer» B. –10 V
Discussion
39.

For what value of does the transistor enter the saturation region?

A. 20
B. 50
C. 75
D. 116
Answer» E.
Discussion
40.

The cutoff region is defined by IB ________ 0 A.

A. >
B. <
C. [C].
D. [D].
Answer» D. [D].
Discussion
41.

The saturation region is defined by VCE ________ VCEsat.

A. >
B. <
C. [C].
D. [D].
Answer» D. [D].
Discussion
42.

Determine the quiescent values of I D and V GS .

A. 1.2 mA, –1.8 V
B. 1.5 mA, –1.5 V
C. 2.0 mA, –1.2 V
D. 3.0 mA, –0.8 V
Answer» C. 2.0 mA, –1.2 V
Discussion
43.

Specification sheets typically provide the value of the constant k for enhancement-type MOSFETs.

A. True
B. False
C. -
D. -
Answer» C. -
Discussion
44.

Determine the value of V DS Q .

A. 3.5 V
B. 4.86 V
C. 7.14 V
D. 10 V
Answer» B. 4.86 V
Discussion
45.

Which of the following describe(s) the difference(s) between JFETs and depletion-type MOSFETs?

A. V GS can be positive or negative for the depletion-type.
B. I D can exceed I DSS for the depletion-type.
C. The depletion-type can operate in the enhancement mode.
D. All of the above
Answer» E.
Discussion
46.

What is the new value of R D when there is 7 V across V DS ?

A. 3 k
B. 3.3 k
C. 4 k
D. 5 k
Answer» C. 4 k
Discussion
47.

In the design of linear amplifiers, it is good design practice to choose operating points that do not crowd the saturation level or cutoff regions.

A. True
B. False
C. -
D. -
Answer» B. False
Discussion
48.

Calculate V DS .

A. 0 V
B. 6 V
C. 16 V
D. 11 V
Answer» B. 6 V
Discussion
49.

Seldom are current levels measured since such maneuvers require disturbing the network structure to insert the meter.

A. True
B. False
C. -
D. -
Answer» B. False
Discussion
50.

Calculate V D .

A. 23.0 V
B. 17.0 V
C. 4.6 V
D. 12.4 V
Answer» C. 4.6 V
Discussion