

MCQOPTIONS
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This section includes 23 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
1. |
_______ is sputtered on the whole wafer. |
A. | silicon |
B. | calcium |
C. | potassium |
D. | aluminium |
Answer» E. | |
2. |
N-well is formed by __________ |
A. | decomposition |
B. | diffusion |
C. | dispersion |
D. | filtering |
Answer» C. dispersion | |
3. |
Which type of CMOS circuits are good and better? |
A. | p well |
B. | n well |
C. | all of the mentioned |
D. | none of the mentioned |
Answer» C. all of the mentioned | |
4. |
P-well doping concentration and depth will affect the __________ |
A. | threshold voltage |
B. | Vss |
C. | Vdd |
D. | Vgs |
Answer» B. Vss | |
5. |
Few parts of photoresist layer is removed by using __________ |
A. | acidic solution |
B. | neutral solution |
C. | pure water |
D. | diluted water |
Answer» B. neutral solution | |
6. |
In CMOS fabrication, the photoresist layer is exposed to __________ |
A. | visible light |
B. | ultraviolet light |
C. | infra red light |
D. | fluorescent |
Answer» C. infra red light | |
7. |
Photoresist layer is formed using __________ |
A. | high sensitive polymer |
B. | light sensitive polymer |
C. | polysilicon |
D. | silicon di oxide |
Answer» C. polysilicon | |
8. |
Oxidation process is carried out using __________ |
A. | hydrogen |
B. | low purity oxygen |
C. | sulphur |
D. | nitrogen |
Answer» B. low purity oxygen | |
9. |
P-well is created on __________ |
A. | p substrate |
B. | n substrate |
C. | p & n substrate |
D. | none of the mentioned |
Answer» C. p & n substrate | |
10. |
CMOS has __________ |
A. | high noise margin |
B. | high packing density |
C. | high power dissipation |
D. | high complexity |
Answer» C. high power dissipation | |
11. |
CMOS technology is used in developing which of the following? |
A. | microprocessors |
B. | microcontrollers |
C. | digital logic circuits |
D. | all of the mentioned |
Answer» E. | |
12. |
WHICH_TYPE_OF_CMOS_CIRCUITS_ARE_GOOD_AND_BETTER??$ |
A. | p well |
B. | n well |
C. | all of the mentioned |
D. | none of the mentioned |
Answer» C. all of the mentioned | |
13. |
_______ is sputtered on the whole wafer$ |
A. | silicon |
B. | calcium |
C. | potassium |
D. | aluminium |
Answer» E. | |
14. |
N-well is formed by$ |
A. | decomposition |
B. | diffusion |
C. | dispersion |
D. | filtering |
Answer» C. dispersion | |
15. |
P-well doping concentration and depth will affect th? |
A. | threshold voltage |
B. | Vss |
C. | Vdd |
D. | Vgs |
Answer» B. Vss | |
16. |
Few parts of photoresist layer is removed by using |
A. | acidic solution |
B. | neutral solution |
C. | pure water |
D. | diluted water |
Answer» B. neutral solution | |
17. |
In CMOS fabrication,the photoresist layer is exposed to |
A. | visible light |
B. | ultraviolet light |
C. | infra red light |
D. | fluorescent |
Answer» C. infra red light | |
18. |
Photoresist layer is formed using |
A. | high sensitive polymer |
B. | light sensitive polymer |
C. | polysilicon |
D. | silicon di oxide |
Answer» C. polysilicon | |
19. |
Oxidation process is carried out using |
A. | hydrogen |
B. | low purity oxygen |
C. | sulphur |
D. | nitrogen |
Answer» B. low purity oxygen | |
20. |
P-well is created on |
A. | p subtrate |
B. | n substrate |
C. | p & n substrate |
D. | none of the mentioned |
Answer» C. p & n substrate | |
21. |
In CMOS fabrication, nMOS and pMOS are integrated in same substrate. |
A. | true |
B. | false |
Answer» B. false | |
22. |
CMOS has |
A. | high noise margin |
B. | high packing density |
C. | high power dissipation |
D. | high complexity |
Answer» C. high power dissipation | |
23. |
CMOS technology is used in developing |
A. | microprocessors |
B. | microcontrollers |
C. | digital logic circuits |
D. | all of the mentioned |
Answer» E. | |