Explore topic-wise MCQs in Vlsi.

This section includes 23 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.

1.

_______ is sputtered on the whole wafer.

A. silicon
B. calcium
C. potassium
D. aluminium
Answer» E.
2.

N-well is formed by __________

A. decomposition
B. diffusion
C. dispersion
D. filtering
Answer» C. dispersion
3.

Which type of CMOS circuits are good and better?

A. p well
B. n well
C. all of the mentioned
D. none of the mentioned
Answer» C. all of the mentioned
4.

P-well doping concentration and depth will affect the __________

A. threshold voltage
B. Vss
C. Vdd
D. Vgs
Answer» B. Vss
5.

Few parts of photoresist layer is removed by using __________

A. acidic solution
B. neutral solution
C. pure water
D. diluted water
Answer» B. neutral solution
6.

In CMOS fabrication, the photoresist layer is exposed to __________

A. visible light
B. ultraviolet light
C. infra red light
D. fluorescent
Answer» C. infra red light
7.

Photoresist layer is formed using __________

A. high sensitive polymer
B. light sensitive polymer
C. polysilicon
D. silicon di oxide
Answer» C. polysilicon
8.

Oxidation process is carried out using __________

A. hydrogen
B. low purity oxygen
C. sulphur
D. nitrogen
Answer» B. low purity oxygen
9.

P-well is created on __________

A. p substrate
B. n substrate
C. p & n substrate
D. none of the mentioned
Answer» C. p & n substrate
10.

CMOS has __________

A. high noise margin
B. high packing density
C. high power dissipation
D. high complexity
Answer» C. high power dissipation
11.

CMOS technology is used in developing which of the following?

A. microprocessors
B. microcontrollers
C. digital logic circuits
D. all of the mentioned
Answer» E.
12.

WHICH_TYPE_OF_CMOS_CIRCUITS_ARE_GOOD_AND_BETTER??$

A. p well
B. n well
C. all of the mentioned
D. none of the mentioned
Answer» C. all of the mentioned
13.

_______ is sputtered on the whole wafer$

A. silicon
B. calcium
C. potassium
D. aluminium
Answer» E.
14.

N-well is formed by$

A. decomposition
B. diffusion
C. dispersion
D. filtering
Answer» C. dispersion
15.

P-well doping concentration and depth will affect th?

A. threshold voltage
B. Vss
C. Vdd
D. Vgs
Answer» B. Vss
16.

Few parts of photoresist layer is removed by using

A. acidic solution
B. neutral solution
C. pure water
D. diluted water
Answer» B. neutral solution
17.

In CMOS fabrication,the photoresist layer is exposed to

A. visible light
B. ultraviolet light
C. infra red light
D. fluorescent
Answer» C. infra red light
18.

Photoresist layer is formed using

A. high sensitive polymer
B. light sensitive polymer
C. polysilicon
D. silicon di oxide
Answer» C. polysilicon
19.

Oxidation process is carried out using

A. hydrogen
B. low purity oxygen
C. sulphur
D. nitrogen
Answer» B. low purity oxygen
20.

P-well is created on

A. p subtrate
B. n substrate
C. p & n substrate
D. none of the mentioned
Answer» C. p & n substrate
21.

In CMOS fabrication, nMOS and pMOS are integrated in same substrate.

A. true
B. false
Answer» B. false
22.

CMOS has

A. high noise margin
B. high packing density
C. high power dissipation
D. high complexity
Answer» C. high power dissipation
23.

CMOS technology is used in developing

A. microprocessors
B. microcontrollers
C. digital logic circuits
D. all of the mentioned
Answer» E.