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This section includes 585 Mcqs, each offering curated multiple-choice questions to sharpen your Computer Organization knowledge and support exam preparation. Choose a topic below to get started.
251. |
The standard SRAM chips are costly as ____ |
A. | They use highly advanced micro-electronic devices |
B. | They house 6 transistor per chip |
C. | They require specially designed PCB’s |
D. | None of the mentioned |
Answer» C. They require specially designed PCB’s | |
252. |
The memory module obtained by placing a number of flash chips for higher memory storage called as __ |
A. | FIMM |
B. | SIMM |
C. | Flash card |
D. | RIMM |
Answer» D. RIMM | |
253. |
The disadvantage of the EEPROM is/are __ |
A. | The requirement of different voltages to read,write and store information |
B. | The requirement of different voltages to read,write and store information |
C. | The inefficient memory mapping schemes used |
D. | All of the mentioned |
Answer» B. The requirement of different voltages to read,write and store information | |
254. |
The memory devices which are similar to EEPROM but differ in the cost effectiveness is _____ |
A. | Memory sticks |
B. | Blue-ray devices |
C. | Flash memory |
D. | CMOS |
Answer» D. CMOS | |
255. |
The flash memories find application in ____ |
A. | Super computers |
B. | Mainframe systems |
C. | Distributed systems |
D. | Portable devices |
Answer» E. | |
256. |
The contents of the EPROM are earsed by __ |
A. | Overcharging the chip |
B. | Exposing the chip to UV rays |
C. | Exposing the chip to IR rays |
D. | Discharging the Chip |
Answer» C. Exposing the chip to IR rays | |
257. |
The RDRAM chips assembled into larger memory modules called ___ |
A. | RRIM |
B. | DIMM |
C. | SIMM |
D. | All of the mentioned |
Answer» B. DIMM | |
258. |
The PROM is more effective than ROM chips in regard to ___ |
A. | Cost |
B. | Memory management |
C. | Speed of operation |
D. | Both Cost and Speed of operation |
Answer» E. | |
259. |
The ROM chips are mainly used to store ____ |
A. | System files |
B. | Root directories |
C. | Boot files |
D. | Driver files |
Answer» D. Driver files | |
260. |
The difference between the EPROM and ROM circuitory is _ |
A. | The usage of MOSFET’s over transistors |
B. | The usage of JFET’s over transistors |
C. | The usage of an extra transistor |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
261. |
PROM stands for ______ |
A. | Programmable Read Only Memory |
B. | Pre-fed Read Only Memory |
C. | Pre-required Read Only Memory |
D. | Programmed Read Only Memory |
Answer» B. Pre-fed Read Only Memory | |
262. |
A RAMBUS which has 18 data lines is called as ___ |
A. | Extended RAMBUS |
B. | Direct RAMBUS |
C. | Direct RAMBUS |
D. | Indirect RAMBUS |
Answer» C. Direct RAMBUS | |
263. |
The type of signaling used in RAMBUS is __ |
A. | CLK signalling |
B. | Differential signalling |
C. | Integral signalling |
D. | None of the mentioned |
Answer» C. Integral signalling | |
264. |
The data is transfered over the RAMBUS as _____ |
A. | Packets |
B. | Blocks |
C. | Swing voltages |
D. | Bits |
Answer» D. Bits | |
265. |
The RAMBUS requires specially designed memory chips similar to ___ |
A. | SRAM |
B. | SDRAM |
C. | DRAM |
D. | DDRRAM |
Answer» D. DDRRAM | |
266. |
The special communication used in RAMBUS are __ |
A. | RAMBUS channel |
B. | D-link |
C. | Dial-up |
D. | None of the mentioned |
Answer» B. D-link | |
267. |
The key feature of the RAMBUS tech is ___ |
A. | Greater memory utilisation |
B. | Effeciency |
C. | Speed of transfer |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
268. |
RamBUS is better than the other memory chips in terms of |
A. | Efficiency |
B. | Speed of operation |
C. | Wider bandwidth |
D. | All of the mentioned |
Answer» C. Wider bandwidth | |
269. |
The higher order bits of the address are used to _ |
A. | Specify the row address |
B. | Specify the column address |
C. | Input the CS |
D. | None of the mentioned |
Answer» B. Specify the column address | |
270. |
The RAS and CAS signals are provided by the __ |
A. | Mode register |
B. | CS |
C. | Memory controller |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
271. |
Consider a memory organised into 8K rows, and that it takes 4 cycles to complete a read opeartion. Then the refresh overhead of the chip is ____ |
A. | 0.0021 |
B. | 0.0038 |
C. | 0.0064 |
D. | 0.0128 |
Answer» C. 0.0064 | |
272. |
The address lines multiplexing is done using __ |
A. | MMU |
B. | Memory controller unit |
C. | Page table |
D. | Overlay geberator |
Answer» C. Page table | |
273. |
To organise large memory chips we make use of __ |
A. | Integrated chips |
B. | Upgraded hardware |
C. | Memory modules |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
274. |
The SRAM’s are basically used as _ |
A. | Registers |
B. | Caches |
C. | TLB |
D. | Buffer |
Answer» C. TLB | |
275. |
To improve the data retrieval rate |
A. | The memory is divided into two banks |
B. | The memory is divided into two banks |
C. | The clock frequency is increased |
D. | None of the mentioned |
Answer» B. The memory is divided into two banks | |
276. |
The chip can be disabled or cut off from external connection using ___ |
A. | Chip select |
B. | LOCK |
C. | ACPT |
D. | RESET |
Answer» B. LOCK | |
277. |
The time taken to transfer a word of data to or from the memory is called as ____ |
A. | Access time |
B. | Cycle time |
C. | Memory latency |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
278. |
DDR SDRAM’s perform fster data transfer by |
A. | Integrating the hardware |
B. | Transfering on both edges |
C. | Improving the clock speeds |
D. | Increasing the bandwidth |
Answer» C. Improving the clock speeds | |
279. |
The SDRAM performs operation on the ___ |
A. | Rising edge of the clock |
B. | Falling edge of the clock |
C. | Middle state of the clock |
D. | Transition state of the clock |
Answer» B. Falling edge of the clock | |
280. |
The mode register is used to |
A. | Select the row or column data transfer mode |
B. | Select the mode of operation |
C. | Select the mode of operation |
D. | All of the mentioned |
Answer» C. Select the mode of operation | |
281. |
The block transfer capability of the DRAM is called _____ |
A. | Burst mdoe |
B. | Block mode |
C. | Fast page mode |
D. | Fast frame mode |
Answer» D. Fast frame mode | |
282. |
The difference in address and data connection between DRAM’s and SDRAM’s is |
A. | The usage of more number of pins in SDRAM’s |
B. | The requirement of more address lines in SDRAM’s |
C. | The usage of buffer in SDRAM’s |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
283. |
The difference between DRAM’s and SDRAM’s is/are _ |
A. | The DRAM’s will not use the master slave relationship in data transfer |
B. | The SDRAM’s make use of clock |
C. | The SDRAM’s are more power efficient |
D. | None of the mentioned |
Answer» E. | |
284. |
In order to read multiple bytes of a row at the same time, we make use of __ |
A. | Latch |
B. | Shift register |
C. | Cache |
D. | Memory extension |
Answer» B. Shift register | |
285. |
To get the row address of the required data ______ is enabled. |
A. | CAS |
B. | RAS |
C. | CS |
D. | Sense/write |
Answer» C. CS | |
286. |
The processor must take into account the delay in accessing the memory location, such memories are called _ |
A. | Delay integrated |
B. | Asynchronous memories |
C. | Synchronous memories |
D. | Isochronous memories |
Answer» C. Synchronous memories | |
287. |
To reduce the number of external connections reqiured, we make use of __ |
A. | De-multiplexer |
B. | Multiplexer |
C. | Encoder |
D. | Decoder |
Answer» C. Encoder | |
288. |
The disadvantage of DRAM over SRAM is/are __ |
A. | Lower data storage capacities |
B. | Higher heat descipation |
C. | The cells are not static |
D. | All of the mentioned |
Answer» D. All of the mentioned | |
289. |
The Reason for the disregarding of the SRAM’s is ____ |
A. | Low Efficiency |
B. | High power consumption |
C. | High power consumption |
D. | All of the mentioned |
Answer» D. All of the mentioned | |
290. |
The advantage of CMOS SRAM over the transistor one’s is ______ |
A. | Low cost |
B. | High efficiency |
C. | High durability |
D. | Low power consumption |
Answer» E. | |
291. |
1024 X 1 |
A. | Dynamic memory |
B. | Static memory |
C. | Register |
D. | Cache |
Answer» C. Register | |
292. |
A memory organisation that can hold upto 1024 bits and has a minimum of 10 address lines can be organised into ___ |
A. | 128 X 8 |
B. | 256 X 4 |
C. | 512 X 2 |
D. | 1024 X 1 |
Answer» E. | |
293. |
The number of external connections required in 16 X 8 memory organisation is |
A. | 14 |
B. | 19 |
C. | 15 |
D. | 12 |
Answer» B. 19 | |
294. |
The word line is driven by the __ |
A. | Chip select |
B. | Address decoder |
C. | Data line |
D. | Control line |
Answer» C. Data line | |
295. |
A 16 X 8 organisation of memory cells, can store upto __ |
A. | 256 bits |
B. | 1024 bits |
C. | 512 bits |
D. | 128 bits |
Answer» E. | |
296. |
The cells in a row are connected to a common line called __ |
A. | Work line |
B. | Word line |
C. | Length line |
D. | Principle diagonal |
Answer» C. Length line | |
297. |
VLSI stands for _____ |
A. | Very Large Scale Integration |
B. | Very Large Stand-alone Integration |
C. | Volatile Layer System Interface |
D. | None of the mentioned |
Answer» B. Very Large Stand-alone Integration | |
298. |
The cells in each column are connected to __ |
A. | Word line |
B. | Data line |
C. | Read line |
D. | Sense/ Write line |
Answer» E. | |
299. |
The logical addresses generated by the cpu are mapped onto physical memory by ___ |
A. | Relocation register |
B. | TLB |
C. | MMU |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
300. |
________ is the bootleneck, when it comes computer performance. |
A. | Memory access time |
B. | Memory cycle time |
C. | Delay |
D. | Latency |
Answer» C. Delay | |