98 + Mcqs in Basic Electronics Engineering Page 2 McqOptions

51.	The P - type semiconductor impurities are also called as
A.	Acceptor impurities
B.	Donor impurities
C.	Either (a) or (b)
D.	None of these
Answer» B. Donor impurities

Discussion

52.	The cut - in voltage for silicon and germanium are
A.	0.3 V, 0.3 V
B.	0.3 V, 0.7 V
C.	0.7 V, 0.7 V
D.	0.7 V, 0.3 V
Answer» E.

Discussion

53.	Filters are used to convert
A.	Pulsating dc signal into a pure dc signal
B.	Pure dc signal into a pulsating dc signal
C.	Pulsating dc signal into a pure ac signal
D.	Pulsating ac signal into a pure dc signal
Answer» B. Pure dc signal into a pulsating dc signal

Discussion

54.	When the graph between current through and voltage across a device is a straight line, the device is referred to as ……………….
A.	linear
B.	active
C.	nonlinear
D.	passive
Answer» B. active

Discussion

55.	The knee voltage of a crystal diode is approximately equal to ………….
A.	applied voltage
B.	breakdown voltage
C.	forward voltage
D.	barrier potential
Answer» E.

Discussion

56.	If the doping level of a crystal diode is increased, the breakdown voltage………….
A.	remains the same
B.	is increased
C.	is decreased
D.	none of the above
Answer» D. none of the above

Discussion

57.	The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode
A.	the same as
B.	lower than
C.	more than
D.	none of the above
Answer» C. more than

Discussion

58.	If the temperature of a crystal diode increases, then leakage current ………..
A.	remains the same
B.	decreases
C.	increases
D.	becomes zero
Answer» D. becomes zero

Discussion

59.	The leakage current in a crystal diode is due to …………….
A.	minority carriers
B.	majority carriers
C.	junction capacitance
D.	none of the above
Answer» B. majority carriers

Discussion

60.	An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
A.	conductor
B.	insulator
C.	resistance material
D.	none of the above
Answer» B. insulator

Discussion

61.	The d.c. resistance of a crystal diode is ………….. its a.c. resistance
A.	the same as
B.	more than
C.	less than
D.	none of the above
Answer» D. none of the above

Discussion

62.	A crystal diode is used as ……………
A.	an amplifier
B.	a rectifier
C.	an oscillator
D.	a voltage regulator
Answer» C. an oscillator

Discussion

63.	The forward voltage drop across a silicon diode is about …………………
A.	2.5 V
B.	3 V
C.	10 V
D.	0.7 V
Answer» E.

Discussion

64.	The reverse current in a diode is of the order of ……………….
A.	kA
B.	mA
C.	μA
D.	A
Answer» D. A

Discussion

65.	If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased.
A.	forward
B.	reverse
C.	either forward or reverse
D.	none of the above
Answer» B. reverse

Discussion

66.	A crystal diode has forward resistance of the order of ……………
A.	kΩ
B.	Ω
C.	MΩ
D.	none of the above
Answer» C. MΩ

Discussion

67.	A crystal diode has ………
A.	one pn junction
B.	two pn junctions
C.	three pn junctions
D.	none of the above
Answer» B. two pn junctions

Discussion

68.	At room temperature, an intrinsic silicon crystal acts approximately as ……
A.	A battery
B.	A conductor
C.	An insulator
D.	A piece of copper wire
Answer» D. A piece of copper wire

Discussion

69.	At absolute temperature, an intrinsic semiconductor has ……….
A.	A few free electrons
B.	Many holes
C.	Many free electrons
D.	No holes or free electrons
Answer» E.

Discussion

70.	At room temperature, an intrinsic semiconductor has ……….
A.	Many holes only
B.	A few free electrons and holes
C.	Many free electrons only
D.	No holes or free electrons
Answer» C. Many free electrons only

Discussion

71.	In an intrinsic semiconductor, the number of free electrons ………
A.	Equals the number of holes
B.	Is greater than the number of holes
C.	Is less than the number of holes
D.	None of the above
Answer» B. Is greater than the number of holes

Discussion

72.	The leakage current in a pn junction is of the order of
A.	Aa
B.	mA
C.	kA
D.	µA
Answer» E.

Discussion

73.	With forward bias to a pn junction , the width of depletion layer ………
A.	Decreases
B.	Increases
C.	Remains the same
D.	None of the above
Answer» B. Increases

Discussion

74.	When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……
A.	Junction capacitance
B.	Minority carriers
C.	Majority carriers
D.	None of the above
Answer» C. Majority carriers

Discussion

75.	The leakage current across a pn junction is due to …………..
A.	Minority carriers
B.	Majority carriers
C.	Junction capacitance
D.	None of the above
Answer» B. Majority carriers

Discussion

76.	A reverse biased pn junction has resistance of the order of
A.	Ω
B.	kΩ
C.	MΩ
D.	None of the above
Answer» D. None of the above

Discussion

77.	A pn junction acts as a ……….
A.	Controlled switch
B.	Bidirectional switch
C.	Unidirectional switch
D.	None of the above
Answer» D. None of the above

Discussion

78.	A reverse bias pn junction has …………
A.	Very narrow depletion layer
B.	Almost no current
C.	Very low resistance
D.	Large current flow
Answer» C. Very low resistance

Discussion

79.	In the depletion region of a pn junction, there is a shortage of ……..
A.	Acceptor ions
B.	Holes and electrons
C.	Donor ions
D.	None of the above
Answer» C. Donor ions

Discussion

80.	The barrier voltage at a pn junction for germanium is about ………
A.	5 V
B.	3 V
C.	Zero
D.	3 V
Answer» E.

Discussion

81.	The battery connections required to forward bias a pn junction are ……
A.	+ve terminal to p and –ve terminal to n
B.	-ve terminal to p and +ve terminal to n
C.	-ve terminal to p and –ve terminal to n
D.	None of the above
Answer» B. -ve terminal to p and +ve terminal to n

Discussion

82.	The random motion of holes and free electrons due to thermal agitation is called ……….
A.	Diffusion
B.	Pressure
C.	Ionisation
D.	None of the above
Answer» B. Pressure

Discussion

83.	In a semiconductor, current conduction is due to ……..
A.	Only holes
B.	Only free electrons
C.	Holes and free electrons
D.	None of the above
Answer» D. None of the above

Discussion

84.	A hole and electron in close proximity would tend to ……….
A.	Repel each other
B.	Attract each other
C.	Have no effect on each other
D.	None of the above
Answer» C. Have no effect on each other

Discussion

85.	As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..
A.	Remains the same
B.	Increases
C.	Decreases
D.	None of the above
Answer» D. None of the above

Discussion

86.	The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.
A.	10 atoms for 108 atoms
B.	1 atom for 108 atoms
C.	1 atom for 104 atoms
D.	1 atom for 100 atoms
Answer» C. 1 atom for 104 atoms

Discussion

87.	A hole in a semiconductor is defined as …………….
A.	A free electron
B.	The incomplete part of an electron pair bond
C.	A free proton
D.	A free neutron
Answer» C. A free proton

Discussion

88.	Addition of trivalent impurity to a semiconductor creates many ……..
A.	Holes
B.	Free electrons
C.	Valence electrons
D.	Bound electrons
Answer» B. Free electrons

Discussion

89.	A trivalent impurity has ….. valence electrons
A.	4
B.	5
C.	6
D.	3
Answer» E.

Discussion

90.	A pentavalent impurity has ………. Valence electrons
A.	3
B.	5
C.	4
D.	6
Answer» C. 4

Discussion

91.	Addition of pentavalent impurity to a semiconductor creates many ……..
A.	Free electrons
B.	Holes
C.	Valence electrons
D.	Bound electrons
Answer» B. Holes

Discussion

92.	When a pentavalent impurity is added to a pure semiconductor, it becomes ………
A.	An insulator
B.	An intrinsic semiconductor
C.	p-type semiconductor
D.	n-type semiconductor
Answer» E.

Discussion

93.	The strength of a semiconductor crystal comes from ……..
A.	Forces between nuclei
B.	Forces between protons
C.	Electron-pair bonds
D.	None of the above
Answer» D. None of the above

Discussion

94.	When a pure semiconductor is heated, its resistance …………..
A.	Goes up
B.	Goes down
C.	Remains the same
D.	Can’t say
Answer» C. Remains the same

Discussion

95.	A semiconductor has generally ……………… valence electrons.
A.	2
B.	3
C.	6
D.	4
Answer» E.

Discussion

96.	The most commonly used semiconductor is ………..
A.	Germanium
B.	Silicon
C.	Carbon
D.	Sulphur
Answer» C. Carbon

Discussion

97.	A semiconductor has ………… temperature coefficient of resistance.
A.	Positive
B.	Zero
C.	Negative
D.	None of the above
Answer» D. None of the above

Discussion

98.	A semiconductor is formed by ……… bonds.
A.	Covalent
B.	Electrovalent
C.	Co-ordinate
D.	None of the above
Answer» B. Electrovalent

Discussion

Explore topic-wise MCQs in ENGINEERING SERVICES EXAMINATION (ESE).

The&nbsp;P&nbsp;-&nbsp;type&nbsp;semiconductor&nbsp;impurities&nbsp;are&nbsp;also&nbsp;called&nbsp;as&nbsp;

The&nbsp;cut&nbsp;-&nbsp;in&nbsp;voltage&nbsp;for&nbsp;silicon&nbsp;and&nbsp;germanium&nbsp;are&nbsp;

Filters&nbsp;are&nbsp;used&nbsp;to&nbsp;convert&nbsp;

When&nbsp;the&nbsp;graph&nbsp;between&nbsp;current&nbsp;through&nbsp;and&nbsp;voltage&nbsp;across&nbsp;a&nbsp;device&nbsp;is&nbsp;a&nbsp;straight&nbsp;line,&nbsp;the&nbsp;device&nbsp;is&nbsp;referred&nbsp;to&nbsp;as&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;&hellip;.

&nbsp;The&nbsp;knee&nbsp;voltage&nbsp;of&nbsp;a&nbsp;crystal&nbsp;diode&nbsp;is&nbsp;approximately&nbsp;equal&nbsp;to&nbsp;&hellip;&hellip;&hellip;&hellip;.

If&nbsp;the&nbsp;doping&nbsp;level&nbsp;of&nbsp;a&nbsp;crystal&nbsp;diode&nbsp;is&nbsp;increased,&nbsp;the&nbsp;breakdown&nbsp;voltage&hellip;&hellip;&hellip;&hellip;.

The&nbsp;PIV&nbsp;rating&nbsp;of&nbsp;a&nbsp;crystal&nbsp;diode&nbsp;is&nbsp;&hellip;&hellip;&hellip;&hellip;..&nbsp;that&nbsp;of&nbsp;equivalent&nbsp;vacuum&nbsp;diode

If&nbsp;the&nbsp;temperature&nbsp;of&nbsp;a&nbsp;crystal&nbsp;diode&nbsp;increases,&nbsp;then&nbsp;leakage&nbsp;current&nbsp;&hellip;&hellip;&hellip;..

The&nbsp;leakage&nbsp;current&nbsp;in&nbsp;a&nbsp;crystal&nbsp;diode&nbsp;is&nbsp;due&nbsp;to&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;.

An&nbsp;ideal&nbsp;crystal&nbsp;diode&nbsp;is&nbsp;one&nbsp;which&nbsp;behaves&nbsp;as&nbsp;a&nbsp;perfect&nbsp;&hellip;&hellip;&hellip;..&nbsp;when&nbsp;forward&nbsp;biased.

The&nbsp;d.c.&nbsp;resistance&nbsp;of&nbsp;a&nbsp;crystal&nbsp;diode&nbsp;is&nbsp;&hellip;&hellip;&hellip;&hellip;..&nbsp;its&nbsp;a.c.&nbsp;resistance

A&nbsp;crystal&nbsp;diode&nbsp;is&nbsp;used&nbsp;as&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;

The&nbsp;forward&nbsp;voltage&nbsp;drop&nbsp;across&nbsp;a&nbsp;silicon&nbsp;diode&nbsp;is&nbsp;about&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;&hellip;&hellip;

The&nbsp;reverse&nbsp;current&nbsp;in&nbsp;a&nbsp;diode&nbsp;is&nbsp;of&nbsp;the&nbsp;order&nbsp;of&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;&hellip;.

If&nbsp;the&nbsp;arrow&nbsp;of&nbsp;crystal&nbsp;diode&nbsp;symbol&nbsp;is&nbsp;positive&nbsp;w.r.t.&nbsp;bar,&nbsp;then&nbsp;diode&nbsp;is&nbsp;&hellip;&hellip;&hellip;&hellip;..&nbsp;biased.

&nbsp;A&nbsp;crystal&nbsp;diode&nbsp;has&nbsp;forward&nbsp;resistance&nbsp;of&nbsp;the&nbsp;order&nbsp;of&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;

A&nbsp;crystal&nbsp;diode&nbsp;has&nbsp;&hellip;&hellip;&hellip;

At&nbsp;room&nbsp;temperature,&nbsp;an&nbsp;intrinsic&nbsp;silicon&nbsp;crystal&nbsp;acts&nbsp;approximately&nbsp;as&nbsp;&hellip;&hellip;

At&nbsp;absolute&nbsp;temperature,&nbsp;an&nbsp;intrinsic&nbsp;semiconductor&nbsp;has&nbsp;&hellip;&hellip;&hellip;.

At&nbsp;room&nbsp;temperature,&nbsp;an&nbsp;intrinsic&nbsp;semiconductor&nbsp;has&nbsp;&hellip;&hellip;&hellip;.

&nbsp;In&nbsp;an&nbsp;intrinsic&nbsp;semiconductor,&nbsp;the&nbsp;number&nbsp;of&nbsp;free&nbsp;electrons&nbsp;&hellip;&hellip;&hellip;

The&nbsp;leakage&nbsp;current&nbsp;in&nbsp;a&nbsp;pn&nbsp;junction&nbsp;is&nbsp;of&nbsp;the&nbsp;order&nbsp;of

With&nbsp;forward&nbsp;bias&nbsp;to&nbsp;a&nbsp;pn&nbsp;junction&nbsp;,&nbsp;the&nbsp;width&nbsp;of&nbsp;depletion&nbsp;layer&nbsp;&hellip;&hellip;&hellip;

When&nbsp;the&nbsp;temperature&nbsp;of&nbsp;an&nbsp;extrinsic&nbsp;semiconductor&nbsp;is&nbsp;increased,&nbsp;the&nbsp;pronounced&nbsp;effect&nbsp;is&nbsp;on&hellip;&hellip;

The&nbsp;leakage&nbsp;current&nbsp;across&nbsp;a&nbsp;pn&nbsp;junction&nbsp;is&nbsp;due&nbsp;to&nbsp;&hellip;&hellip;&hellip;&hellip;..

A&nbsp;reverse&nbsp;biased&nbsp;pn&nbsp;junction&nbsp;has&nbsp;resistance&nbsp;of&nbsp;the&nbsp;order&nbsp;of

A&nbsp;pn&nbsp;junction&nbsp;acts&nbsp;as&nbsp;a&nbsp;&hellip;&hellip;&hellip;.

A&nbsp;reverse&nbsp;bias&nbsp;pn&nbsp;junction&nbsp;has&nbsp;&hellip;&hellip;&hellip;&hellip;

In&nbsp;the&nbsp;depletion&nbsp;region&nbsp;of&nbsp;a&nbsp;pn&nbsp;junction,&nbsp;there&nbsp;is&nbsp;a&nbsp;shortage&nbsp;of&nbsp;&hellip;&hellip;..

The&nbsp;barrier&nbsp;voltage&nbsp;at&nbsp;a&nbsp;pn&nbsp;junction&nbsp;for&nbsp;germanium&nbsp;is&nbsp;about&nbsp;&hellip;&hellip;&hellip;

The&nbsp;battery&nbsp;connections&nbsp;required&nbsp;to&nbsp;forward&nbsp;bias&nbsp;a&nbsp;pn&nbsp;junction&nbsp;are&nbsp;&hellip;&hellip;

The&nbsp;random&nbsp;motion&nbsp;of&nbsp;holes&nbsp;and&nbsp;free&nbsp;electrons&nbsp;due&nbsp;to&nbsp;thermal&nbsp;agitation&nbsp;is&nbsp;called&nbsp;&hellip;&hellip;&hellip;.

&nbsp;In&nbsp;a&nbsp;semiconductor,&nbsp;current&nbsp;conduction&nbsp;is&nbsp;due&nbsp;to&nbsp;&hellip;&hellip;..

A&nbsp;hole&nbsp;and&nbsp;electron&nbsp;in&nbsp;close&nbsp;proximity&nbsp;would&nbsp;tend&nbsp;to&nbsp;&hellip;&hellip;&hellip;.

&nbsp;As&nbsp;the&nbsp;doping&nbsp;to&nbsp;a&nbsp;pure&nbsp;semiconductor&nbsp;increases,&nbsp;the&nbsp;bulk&nbsp;resistance&nbsp;of&nbsp;the&nbsp;semiconductor&nbsp;&hellip;&hellip;&hellip;..

The&nbsp;impurity&nbsp;level&nbsp;in&nbsp;an&nbsp;extrinsic&nbsp;semiconductor&nbsp;is&nbsp;about&nbsp;&hellip;..&nbsp;of&nbsp;pure&nbsp;semiconductor.

A&nbsp;hole&nbsp;in&nbsp;a&nbsp;semiconductor&nbsp;is&nbsp;defined&nbsp;as&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;.

Addition&nbsp;of&nbsp;trivalent&nbsp;impurity&nbsp;to&nbsp;a&nbsp;semiconductor&nbsp;creates&nbsp;many&nbsp;&hellip;&hellip;..

A&nbsp;trivalent&nbsp;impurity&nbsp;has&nbsp;&hellip;..&nbsp;valence&nbsp;electrons

A&nbsp;pentavalent&nbsp;impurity&nbsp;has&nbsp;&hellip;&hellip;&hellip;.&nbsp;Valence&nbsp;electrons

Addition&nbsp;of&nbsp;pentavalent&nbsp;impurity&nbsp;to&nbsp;a&nbsp;semiconductor&nbsp;creates&nbsp;many&nbsp;&hellip;&hellip;..

When&nbsp;a&nbsp;pentavalent&nbsp;impurity&nbsp;is&nbsp;added&nbsp;to&nbsp;a&nbsp;pure&nbsp;semiconductor,&nbsp;it&nbsp;becomes&nbsp;&hellip;&hellip;&hellip;

The&nbsp;strength&nbsp;of&nbsp;a&nbsp;semiconductor&nbsp;crystal&nbsp;comes&nbsp;from&nbsp;&hellip;&hellip;..

When&nbsp;a&nbsp;pure&nbsp;semiconductor&nbsp;is&nbsp;heated,&nbsp;its&nbsp;resistance&nbsp;&hellip;&hellip;&hellip;&hellip;..

&nbsp;A&nbsp;semiconductor&nbsp;has&nbsp;generally&nbsp;&hellip;&hellip;&hellip;&hellip;&hellip;&hellip;&nbsp;valence&nbsp;electrons.

The&nbsp;most&nbsp;commonly&nbsp;used&nbsp;semiconductor&nbsp;is&nbsp;&hellip;&hellip;&hellip;..

A&nbsp;semiconductor&nbsp;has&nbsp;&hellip;&hellip;&hellip;&hellip;&nbsp;temperature&nbsp;coefficient&nbsp;of&nbsp;resistance.

A&nbsp;semiconductor&nbsp;is&nbsp;formed&nbsp;by&nbsp;&hellip;&hellip;&hellip;&nbsp;bonds.

The P - type semiconductor impurities are also called as

The cut - in voltage for silicon and germanium are

Filters are used to convert

When the graph between current through and voltage across a device is a straight line, the device is referred to as ……………….

The knee voltage of a crystal diode is approximately equal to ………….

If the doping level of a crystal diode is increased, the breakdown voltage………….

The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode

If the temperature of a crystal diode increases, then leakage current ………..

The leakage current in a crystal diode is due to …………….

An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.

The d.c. resistance of a crystal diode is ………….. its a.c. resistance

A crystal diode is used as ……………

The forward voltage drop across a silicon diode is about …………………

The reverse current in a diode is of the order of ……………….

If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased.

A crystal diode has forward resistance of the order of ……………

A crystal diode has ………

At room temperature, an intrinsic silicon crystal acts approximately as ……

At absolute temperature, an intrinsic semiconductor has ……….

At room temperature, an intrinsic semiconductor has ……….

In an intrinsic semiconductor, the number of free electrons ………

The leakage current in a pn junction is of the order of

With forward bias to a pn junction , the width of depletion layer ………

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

The leakage current across a pn junction is due to …………..

A reverse biased pn junction has resistance of the order of

A pn junction acts as a ……….

A reverse bias pn junction has …………

In the depletion region of a pn junction, there is a shortage of ……..

The barrier voltage at a pn junction for germanium is about ………

The battery connections required to forward bias a pn junction are ……

The random motion of holes and free electrons due to thermal agitation is called ……….

In a semiconductor, current conduction is due to ……..

A hole and electron in close proximity would tend to ……….

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

A hole in a semiconductor is defined as …………….

Addition of trivalent impurity to a semiconductor creates many ……..

A trivalent impurity has ….. valence electrons

A pentavalent impurity has ………. Valence electrons

Addition of pentavalent impurity to a semiconductor creates many ……..

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

The strength of a semiconductor crystal comes from ……..

When a pure semiconductor is heated, its resistance …………..

A semiconductor has generally ……………… valence electrons.

The most commonly used semiconductor is ………..

A semiconductor has ………… temperature coefficient of resistance.

A semiconductor is formed by ……… bonds.