To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________

a heavily doped n layer is grown between the two p & n layers

a lightly doped n layer is grown between the two p & n layers

a lightly doped p layer is grown between the two p & n layers

a heavily doped p layer is grown between the two p & n layers

To make a signal diode suitable for high current & high vol

1.	To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________
A.	a lightly doped n layer is grown between the two p & n layers
B.	a heavily doped n layer is grown between the two p & n layers
C.	a lightly doped p layer is grown between the two p & n layers
D.	a heavily doped p layer is grown between the two p & n layers
Answer» B. a heavily doped n layer is grown between the two p & n layers