is normally greater for silicon transistor than germanium transistors

increases with increases in temperature

mainly depends on the emitter base junction bias

depends largely on the emitter doping

The current ICBO – McqOptions

1.	The current ICBO
A.	increases with increases in temperature
B.	is normally greater for silicon transistor than germanium transistors
C.	mainly depends on the emitter base junction bias
D.	depends largely on the emitter doping
Answer» B. is normally greater for silicon transistor than germanium transistors

Discussion