In the figure, \(\rm \ln{(r_i)}\) is plotted as a function of \(\rm 1/T\), where \(\rm r_i\) is the intrinsic resistivity of silicon, \(\rm T\) is the temperature, and the plot is almost linearThe slope of the line can be used to estimate

sum of electron and hole mobility in silicon μn + μp

reciprocal of the sum of electron and hole mobility in silicon (μn + μp)-1

intrinsic carrier concentration of silicon \(\rm (n _i)\)

In the figure, \(\rm \ln{(r_i)}\) is plotted as a function of \(\rm

1.	In the figure, \(\rm \ln{(r_i)}\) is plotted as a function of \(\rm 1/T\), where \(\rm r_i\) is the intrinsic resistivity of silicon, \(\rm T\) is the temperature, and the plot is almost linearThe slope of the line can be used to estimate
A.	Band gap energy of silicon Eg
B.	sum of electron and hole mobility in silicon μn + μp
C.	reciprocal of the sum of electron and hole mobility in silicon (μn + μp)-1
D.	intrinsic carrier concentration of silicon \(\rm (n _i)\)
Answer» B. sum of electron and hole mobility in silicon μn + μp

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In the figure, \(\rm \ln{(r_i)}\) is plotted as a function of \(\rm 1/T\), where \(\rm r_i\) is the intrinsic resistivity of silicon, \(\rm T\) is the temperature, and the plot is almost linearThe slope of the line can be used to estimate

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