Hall effect can be used to measure

1.	Hall effect can be used to measure
A.	electric field intensity
B.	magnetic field intensity
C.	carrier concentration
D.	none of these
Answer» D. none of these

Discussion

No Comment Found

Related MCQs

A sample of Si is doped with 1017 donor atoms/cm3. Considering electron mobility in the doped Si 700 cm2/V-sec, the approximate resistivity of the doped Si is
According to Einstein’s relationship for a semiconductor, the ratio of the diffusion constant to the mobility of the charge carriers is
A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to
Pure Metals generally have
A bar of silicon is doped with a boron concentration of 1016 cm-3 and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm-3s-1. If the recombination lifetime is 100 μs, the intrinsic carrier concentration of silicon is 1010 cm-3 and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
For an n-type Ge specimen, width = 4 mm, length = 1 mm, current (along the length of specimen) = 1 mA, magnetic field (perpendicular to the current flow direction) = 0.1 Wb/m2 and Hall voltage magnitude = 0.005 V. Calculate the majority carriers density.
If σ is the conductivity, What is the relation between the electric field E and the current density J in a conducting medium?
For which one of the following materials, is the Hall coefficient closest to zero?
On applying an electric field of intensity 10 V/cm across a semiconductor at a certain temperature the average drift velocity of free electrons is measured to be 70 m/s. Then the electron mobility is
Hall effect can be used to measure

Hall effect can be used to measure

Discussion

No Comment Found

Related MCQs

Reply to Comment