A sample of Si is doped with 1017 donor atoms/cm3. Considering electron mobility in the doped Si 700 cm2/V-sec, the approximate resistivity of the doped Si is

A sample of Si is doped with 1017 donor atoms/cm3. Considering electro

1.	A sample of Si is doped with 1017 donor atoms/cm3. Considering electron mobility in the doped Si 700 cm2/V-sec, the approximate resistivity of the doped Si is
A.	1 Ω-cm
B.	10 Ω-cm
C.	0.1 Ω-cm
D.	100 Ω-cm
Answer» D. 100 Ω-cm

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A sample of Si is doped with 1017 donor atoms/cm3. Considering electron mobility in the doped Si 700 cm2/V-sec, the approximate resistivity of the doped Si is

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