A bar of silicon is doped with a boron concentration of 1016 cm-3 and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm-3s-1. If the recombination lifetime is 100 μs, the intrinsic carrier concentration of silicon is 1010 cm-3 and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is

A bar of silicon is doped with a boron concentration of 1016 cm-3 and

1.	A bar of silicon is doped with a boron concentration of 1016 cm-3 and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm-3s-1. If the recombination lifetime is 100 μs, the intrinsic carrier concentration of silicon is 1010 cm-3 and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
A.	1032 cm-6
B.	1020 cm-6
C.	2 × 1032 cm-6
D.	2 × 1020 cm-6
Answer» D. 2 × 1020 cm-6

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