In a reactance FET, gm = 9 x 10‾³ Siemens, gate to source resistanc – McqOptions

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1.	In a reactance FET, gm = 9 x 10‾³ Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is
A.	1000 Ω
B.	1/1000 Ω
C.	36 x 10³ Ω
D.	4/9 x 10³ Ω
Answer» B. 1/1000 Ω

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