Given that at room temperature, the volt equivalent of temperature VT = 26 mV, hole mobility μp = 500 cm2/Vs and the lifetime of holes 130 ns, in a sample of n-type silicon bar that is exposed to radiation at one end at low-injection level, what is the diffusion length of holes?

Given that at room temperature, the volt equivalent of temperature VT�

1.	Given that at room temperature, the volt equivalent of temperature VT = 26 mV, hole mobility μp = 500 cm2/Vs and the lifetime of holes 130 ns, in a sample of n-type silicon bar that is exposed to radiation at one end at low-injection level, what is the diffusion length of holes?
A.	1300 microns
B.	100 Armstrongs
C.	1699 microns
D.	100 microns
Answer» B. 100 Armstrongs

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Given that at room temperature, the volt equivalent of temperature VT = 26 mV, hole mobility μp = 500 cm2/Vs and the lifetime of holes 130 ns, in a sample of n-type silicon bar that is exposed to radiation at one end at low-injection level, what is the diffusion length of holes?

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